Transistor testing circuit

Claim 2

A test circuit for a bipolar transistor, said transistor having collector and emitter electrodes defining a conduction path therebetween and a control electrode comprising, in combination: energy storage means connected in series with said path to form a series circuit; means for applying successively larger currents to said series circuit; means for applying a forward bias to said control electrode while applying said successively larger currents; means, after each application of a current to said series circuit, for concurrently interrupting the flow of said current and changing the bias applied to said control electrode from a forward to a reverse bias; means responsive to the voltage across said energy storage means when said current is interrupted for providing a low impedance path across said series circuit in a direction to permit current flow from said energy storage means through said conduction path and said low impedance path back to said energy storage means; and means for indicating a rapid decrease in the voltage between the collector and emitter electrodes of said transistor while said reverse bias is present.

Claim 3

The combination of claim 1 wherein said energy storage means comprises an inductance.

Claim 4

The combination of claim 1 wherein said means responsive to the voltage comprises a diode coupled across said series circuit.

Claim 5

The circuit of claim 1 wherein said means for applying successively larger currents comprises, in combination: a capacitance; means for charging said capacitance to successively higher voltage levels in response to a command voltage; means responsive to said voltage levels for producing a current proportional to said levels; and first switching means for coupling said current to said series circuit in response to a first control signal and interrupting the flow of said current in response to a second control signal.

Claim 6

The combination of claim 1 wherein said means for applying a forward bias comprises second switching means in the path between the source of said forward bias and said transistor control electrode, and means for closing said second switching means in response to said first control signal and for opening the same in response to said second control signal.

Claim 7

The combination of claim 1 wherein said means for changing the bias applied to said control electrode comprises third switching means in the path between the source of said reverse bias and said transistor control electrode, and means for opening said third switching means in response to said second control signal and for closing the same in response to said first control signal.

Claim 8

The combination of claim 1 wherein said means for indicating a rapid decrease in the voltage comprises a high pass filter circuit coupled between said collector electrode and a point at a reference potential, said filter producing an output signal whenever the rate of said rapid decrease is in excess of a predetermined value.

Claim 9

The combination of claim 1 further including means responsive to voltage between said control electrode and said emitter electrode for ensuring that the interrupting of the flow of said current does not occur until said voltage is indicative of a reverse bias condition.

Claim 10

Apparatus for testing a bipolar transistor, said transistor having a control electrode, and collector and emitter electrodes defining a main conduction path therebetween, for reverse biased voltage second breakdown comprising, in combination: an inductance coupled to said conduction path forming a series path therewith; means for supplying a current to said series path, whose amplitude increases in predetermined increments; means for rendering said transistor nonconductive by concurrently changing the control electrode bias from a forward to a reverse bias and for disabling said means for supplying a current at a predetermined time after each current amplitude increase until said breakdown occurs, said breakdown being manifested by a rapid decrease in the potential across said conduction path; an asymmetrically conducting element coupled across said series path, said element presenting a relatively high impedance to current flowing from said means for supplying a current and a relatively low impedance to current flowing through said series path when said breakdown occurs; and means for detecting said rapid decrease in the potential.

Claim 11

Apparatus for testing a bipolar transistor, said transistor having a control electrode, and collector and emitter electrodes defining a main conduction path therebetween, for reverse biased voltage second breakdown comprising, in combination: an inductance coupled to said conduction path forming a series path therewith; means for supplying a current to said series path, whose amplitude increases in predetermined increments; means for rendering said transistor nonconductive by concurrently changing the control electrode bias from a forward to a reverse bias and for disabling said means for supplying a current at a predetermined time after each current amplitude increase until said breakdown occurs, said breakdown being manifested by a rapid decrease in the potential across said conduction path; an asymmetrically conducting element coupled across said series path, said element presenting a relatively high impedance to current flowing from said means for supplying a current and a relatively low impedance to current flowing through said series path when said breakdown occurs; and means for detecting said rapid decrease in the potential.

Claim 12

The circuit of claim 9 wherein said means for supplying a current comprises, in combination: a capacitance; means for charging said capacitance to successively higher voltage levels in response to a command voltage; means responsive to said voltage levels for producing a current proportional to said levels; and first switching means for coupling said current to said series path in response to a first control signal and interrupting the flow of said current in response to a second control signal.

Claim 13

The combination of claim 9 wherein said means for detecting said rapid decrease in the voltage comprises a high pass filter circuit coupled between said conduction path and a point at a reference potential, said filter producing an output signal whenever the rate of said decrease is in excess of a predetermined value.

Claim 14

The combination of claim 9 further including means responsive to voltage between said control electrode and said emitter electrode for ensuring that the interrupting of the flow of said current does not occur until said voltage is indicative of a reverse bias condition.