Patent US3977934A successfully refreshed from Google Patents.
US3977934A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silicon manufacture
Assignee: Motorola Solutions Inc
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Filing: 1975-01-02
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Granted: 1976-08-31
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Expires: 1995-01-02
Abstract
Abstract A method of producing monocrystalline semiconductor material in web form from a source of polycrystalline semiconductor material. The source material is heated to form a molten zone on the end thereof, which is contacted by a thermal profile shaping member formed from the same type of semiconductor material as the semiconductor material to be produced. A monocrystalline seed crystal of the shape of the web desired then contacts the molten end of the source material near the shaping member and is withdrawn therefrom as monocrystalline semiconductor material forms on the end thereof.
Inventors
- 👤 Arnold Lesk
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 08:56
CPC Classifications
C; C30; C30B; C30B15/00; C30B15/20; C30B15/22; C30B15/24
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
84 words
A method of producing monocrystalline semiconductor material in web form from a polycrystalline semiconductor source which comprises: forming a molten zone of semiconductor material from said polycrystalline source, contacting the molten zone with a thermal profile shaping member of the same material as the semiconductor material to be produced, drawing monocrystalline semiconductor material from said molten zone through said thermal shaping member, and replenishing said molten zone from said polycrystalline semiconductor material source as said monocrystalline semiconductor material is drawn from said molten zone.
Claim 2
Independent Claim
84 words
A method of producing monocrystalline semiconductor material in web form from a polycrystalline semiconductor source which comprises: forming a molten zone of semiconductor material from said polycrystalline source, contacting the molten zone with a thermal profile shaping member of the same material as the semiconductor material to be produced, drawing monocrystalline semiconductor material from said molten zone through said thermal shaping member, and replenishing said molten zone from said polycrystalline semiconductor material source as said monocrystalline semiconductor material is drawn from said molten zone.
Claim 3
Dependent Claim
13 words
A method as recited in claim 1 wherein said semiconductor material is silicon.
Claim 4
Independent Claim
115 words
A method of producing monocrystalline semiconductor material in web form which comprises the steps of providing a source of polycrystalline semiconductor material in elongated form, heating the end thereof to produce a molten pool thereon having a width no greater than that of the semiconductor material, contacting the molten pool of semiconductor material with a thermal profile shaping member of the same semiconductor material as the material to be produced, contacting the pool near the area contacted by the thermal profile shaping member with a seed crystal of approximately the shape of the web to be formed and withdrawing the seed crystal from the pool of molten material as monocrystalline semiconductor material is grown thereon.
Claim 5
Independent Claim
115 words
A method of producing monocrystalline semiconductor material in web form which comprises the steps of providing a source of polycrystalline semiconductor material in elongated form, heating the end thereof to produce a molten pool thereon having a width no greater than that of the semiconductor material, contacting the molten pool of semiconductor material with a thermal profile shaping member of the same semiconductor material as the material to be produced, contacting the pool near the area contacted by the thermal profile shaping member with a seed crystal of approximately the shape of the web to be formed and withdrawing the seed crystal from the pool of molten material as monocrystalline semiconductor material is grown thereon.
Claim 6
Dependent Claim
13 words
A method as recited in claim 3 wherein said semiconductor material is silicon.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-08-31 | 1980-03-01 | 1980-08-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-08-31 | 1984-03-01 | 1984-08-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-08-31 | 1988-03-01 | 1988-08-31 | $7700.00 | Window Closed / Lapsed |