← Back to Patent Explorer
US3977905A Expired / Lapsed US ⏱️ 0.0 years remaining

Solar cell with niobium pentoxide anti-reflective coating

Assignee: Comsat Corp
•
Filing: 1975-06-20
•
Granted: 1976-08-31
•
Expires: 1995-06-20
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A niobium pentoxide (Nb 2 O 5 ) anti-reflective coating for use on a solar cell responsive to light in the short wavelength region.

Inventors

  • 👤 Akos G. Revesz
  • 👤 Joseph Lindmayer

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-01 14:15
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/30; H10F77/306; H10F77/311; H10F77/315; Y; Y02; Y02E; Y02E10/00; Y02E10/50

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 62 words
A solar cell responsive to light, including light in the short wavelength region of the light spectrum between 0.3 and 0.5 microns, and having an anti-reflective coating over the primary surface of the solar cell through which light enters, which coating does not absorb or reflect useful light including short wavelength light, the improvement comprising an anti-reflective coating consisting of niobium pentoxide.
Claim 2
Dependent Claim 62 words
A solar cell responsive to light, including light in the short wavelength region of the light spectrum between 0.3 and 0.5 microns, and having an anti-reflective coating over the primary surface of the solar cell through which light enters, which coating does not absorb or reflect useful light including short wavelength light, the improvement comprising an anti-reflective coating consisting of niobium pentoxide.
Claim 3
Dependent Claim 125 words
A silicon solar cell having a top and bottom surface and being responsive to light in the short wavelength region of the visible spectrum, comprising: a first semiconductor layer of first type conductivity, a second semiconductor layer of second type conductivity, the interface between said layers defining a junction located less than 2,500 A below the top surface of said cell, a first current collector on the top surface of said cell, a second current collector on the bottom surface of said cell, and a coating of niobium pentoxide disposed on the top surface of said cell to enable substantially all of said light to enter the first layer through those areas of said top surface which are not occupied by said first current collector.
Claim 4
Dependent Claim 125 words
A silicon solar cell having a top and bottom surface and being responsive to light in the short wavelength region of the visible spectrum, comprising: a first semiconductor layer of first type conductivity, a second semiconductor layer of second type conductivity, the interface between said layers defining a junction located less than 2,500 A below the top surface of said cell, a first current collector on the top surface of said cell, a second current collector on the bottom surface of said cell, and a coating of niobium pentoxide disposed on the top surface of said cell to enable substantially all of said light to enter the first layer through those areas of said top surface which are not occupied by said first current collector.

References Cited (Backward Citations)

US3106489A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1979-08-31 1980-03-01 1980-08-31 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1983-08-31 1984-03-01 1984-08-31 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1987-08-31 1988-03-01 1988-08-31 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag