Method for producing a controlled radial path of resistance in a semiconductor monocrystalline rod

Claim 2

In a method of controlling the radial path of resistance in a semiconductor rod composed of silicon during a crucible-free zone melt processing of a previously doped semiconductor rod supported vertically at the ends thereof and having a seed crystal attached to one end thereof with an inductive heating means encompassing an axial portion of such rod at the juncture of the seed crystal and the rod to generate a melt zone which is moved in a stream of protective gas away from such juncture along the axial direction of the rod, the improvement comprising: wherein said melt zone is generated by a single-turn flat coil having a coil slot between the coil terminals thereof sealed with an inert material whereby disturbances in the flow of said protective gas stream at the region of said melt zone are avoided and a substantially uniform path of resistance is produced across a cross-section of a so-treated rod.

Claim 3

In a method as defined in claim 1 wherein said coil slot is sealed with sprayed-on aluminum oxide.

Claim 4

In a method as defined in claim 1 wherein said coil slot is sealed with polybismaleic imide.

Claim 5

In a method of controlling the radial path of resistance in a semiconductor rod composed of silicon during a crucible-free zone melt processing of a previously doped semiconductor rod supported vertically at the ends thereof and having a seed crystal attached to one end thereof with an inductive heating means encompassing an axial portion of such rod at the juncture of the seed crystal and the rod to generate a melt zone which is moved in a stream of protective gas away from such juncture along the axial direction of the rod, the improvement comprising: wherein said melt zone is generated by a single-turn flat coil having a coil slot between the coil terminals thereof sealed with an inert material and having a plurality of uni-directional guide vanes attached to a surface of said coil facing the stream of protective gas whereby the protective gas stream is guided by said vanes in one direction against said melt zone and produces a path of resistance across a cross-section of a so-treated rod which is lower at the center of the rod than at the periphery of the rod.

Claim 6

In a method of controlling the radial path of resistance in a semiconductor rod composed of silicon during a crucible-free zone melt processing of a previously doped semiconductor rod supported vertically at the ends thereof and having a seed crystal attached to one end thereof with an inductive heating means encompassing an axial portion of such rod at the juncture of the seed crystal and the rod to generate a melt zone which is moved in a stream of protective gas away from such juncture along the axial direction of the rod, the improvement comprising: wherein said melt zone is generated by a single-turn flat coil having a coil slot between the coil terminals thereof sealed with an inert material and having a plurality of uni-directional guide vanes attached to a surface of said coil facing the stream of protective gas whereby the protective gas stream is guided by said vanes in one direction against said melt zone and produces a path of resistance across a cross-section of a so-treated rod which is lower at the center of the rod than at the periphery of the rod.

Claim 7

In a method as defined in claim 4 wherein said uni-directional guide vanes are encompassed by a gas hood attached to said single-turn flat coil, said hood having an opening facing the stream of protective gas.

Claim 8

In a method of controlling the radial path of resistance in a semiconductor rod composed of silicon during a crucible-free zone melt processing of a previously doped semiconductor rod supported vertically at the ends thereof and having a seed crystal attached to one end thereof with an inductive heating means encompassing an axial portion of such rod at the juncture of the seed crystal and the rod to generate a melt zone which is moved in a stream of protective gas away from such juncture along the axial direction of the rod, the improvement comprising: wherein said melt zone is generated by a single-turn flat coil having a coil slot between the coil terminals thereof sealed with an inert material and having a plurality of multi-directional guide vanes attached to a surface of said coil facing the stream of protective gas whereby the protective gas is guided by said vanes in more than one direction against said melt zone and produces a substantially uniform path of resistance across a cross-section of a so-treated rod.

Claim 9

In a method of controlling the radial path of resistance in a semiconductor rod composed of silicon during a crucible-free zone melt processing of a previously doped semiconductor rod supported vertically at the ends thereof and having a seed crystal attached to one end thereof with an inductive heating means encompassing an axial portion of such rod at the juncture of the seed crystal and the rod to generate a melt zone which is moved in a stream of protective gas away from such juncture along the axial direction of the rod, the improvement comprising: wherein said melt zone is generated by a single-turn flat coil having a coil slot between the coil terminals thereof sealed with an inert material and having a plurality of multi-directional guide vanes attached to a surface of said coil facing the stream of protective gas whereby the protective gas is guided by said vanes in more than one direction against said melt zone and produces a substantially uniform path of resistance across a cross-section of a so-treated rod.

Claim 10

In a method as defined in claim 6 wherein said multi-directional guide vanes are encompassed by a gas hood attached to said single-turn flat coil, said hood having an opening facing the stream of protective gas.