US3975756A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Gadolinium doped germanium
Assignee: United States Department of the Army
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Filing: 1974-06-28
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Granted: 1976-08-17
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Expires: 1994-06-28
Abstract
Abstract A new light-sensitive, current limiting solid state diode is formed by using gadolinium as a dopant in a germanium crystal to which a gold-germanium eutectic is alloyed thereto, in order to form a p-n junction.
Inventors
- 👤 Daniel J. Lanigan
- 👤 Marvin M. Cohen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 19:19
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/50; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/834; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/221; H10F77/00; H10F77/10; H10F77/12; H10F77/122; H10F77/1223; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/918
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
29 words
A method of forming an improved light-sensitive semi-conductor device comprising alloying a gold-germanium eutectic on the surface of a single gadolinium doped germanium crystal thereby forming a p-n junction.
Claim 2
Independent Claim
29 words
A method of forming an improved light-sensitive semi-conductor device comprising alloying a gold-germanium eutectic on the surface of a single gadolinium doped germanium crystal thereby forming a p-n junction.
Claim 3
Dependent Claim
25 words
The method of claim 1 which comprises alloying said gold-germanium eutectic on the surface of said doped crystal for about 4 seconds at about 650°C.
Claim 4
Dependent Claim
26 words
An improved light-sensitive semi-conductor comprising an alloyed gold-germanium eutectic on the surface of a single crystal of germanium doped with gadolinium thereby forming a p-n junction.
Claim 5
Dependent Claim
26 words
An improved light-sensitive semi-conductor comprising an alloyed gold-germanium eutectic on the surface of a single crystal of germanium doped with gadolinium thereby forming a p-n junction.
Claim 6
Dependent Claim
26 words
The semi-conductor of claim 3 containing an amount of gadolinium effective to impart a substantially constant current-limiting behavior in the forward bias region of said crystal.
Claim 7
Dependent Claim
26 words
The semi-conductor of claim 4, wherein the impurity concentration of said gadolinium in said germanium is at least about 10 13 atoms cm - 3 .
Claim 8
Dependent Claim
24 words
The semi-conductor of claim 4, wherein the impurity concentration of said gadolinium in said germanium is about 10 15 atoms cm - 3 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-08-17 | 1980-02-16 | 1980-08-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-08-17 | 1984-02-16 | 1984-08-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-08-17 | 1988-02-16 | 1988-08-17 | $7700.00 | Window Closed / Lapsed |