Transistor amplifier

Claim 2

A transistor amplifier including a field effect transistor coupled to a load impedance, said field effect transistor having triode-type dynamic characteristics and having a stabilized DC bias current flowing therethrough notwithstanding fluctuations in a source of operating voltage coupled thereto, comprising: a transistor having an input electrode for receiving a signal and a pair of output electrodes; means for coupling one of said output electrodes to the gate electrode of said field effect transistor to apply a voltage thereto; means for injecting a portion of the fluctuations in said source of operating voltage into the other output electrode of said transistor to thereby vary the voltage applied to said field effect transistor gate electrode by said one output electrode of said transistor; and means for supplying a second operating voltage to said transistor.

Claim 3

A transistor amplifier in accordance with claim 1 wherein said transistor is a bipolar transistor, the emitter electrode of which is injected with said portion of fluctuations and the collector electrode of which is coupled to said field effect transistor gate electrode.

Claim 4

A transistor amplifier in accordance with claim 2 wherein said bipolar transistor and said field effect transistor are of complementary types.

Claim 5

A transistor amplifier in accordance with claim 2 wherein said second operating voltage is applied to said transistor through a first impedance connected to said collector electrode; and said means for injecting a portion of said first operating voltage fluctuations into said emitter electrode comprises a second impedance.

Claim 6

A transistor amplifier in accordance with claim 4 further comprising a third impedance for coupling said transistor emitter electrode to a reference potential.

Claim 7

A transistor amplifier in accordance with claim 5 wherein said first, second and third impedances comprise first, second and third resistors, respectively, having resistance values equal to r 1 , r 2 and r 3 , respectively, related in accordance with: ##EQU9## where μ is the amplification constant of said field effect transistor.

Claim 8

A transistor amplifier in accordance with claim 4 wherein said first and second impedances are resistors having respective resistance values in a ratio that is substantially equal to 1 + 1/μ where μ is the amplification constant of said field effect transistor.

Claim 9

A transistor amplifier in accordance with claim 3 wherein said field effect transistor is coupled to said load impedance in grounded source configuration.

Claim 10

A transistor amplifier in accordance with claim 3 wherein said field effect transistor is coupled to said load impedance in source-follower configuration.

Claim 11

A transistor amplifier in accordance with claim 1 wherein said means for coupling one of said transistor output electrodes to said field effect transistor gate electrode comprises an emitter-follower transistor.

Claim 12

A transistor amplifier in accordance with claim 1 wherein said field effect transistor and said transistor are included in one stage of a power amplifier for driving said load impedance, said power amplifier having a second, complementary stage comprising: a second field effect transistor having triode-type dynamic characteristics, said second field effect transistor being complementary to said first field effect transistor and having its source-drain circuit supplied with a further operating voltage; a second transistor complementary to said first transistor and having an input electrode for receiving a signal and a pair of output electrodes; means for coupling one of said second transistor output electrodes to the gate electrode of said second field effect transistor to apply a voltage thereto; means for injecting a portion of fluctuations in said further operating voltage into the other of said second transistor output electrodes to thereby vary the voltage applied to said gate electrode of said second field effect transistor by said one output electrode of said second transistor; and means for supplying a second further operating voltage to said second transistor.

Claim 13

A transistor amplifier in accordance with claim 11 further comprising additional means for injecting fluctuations in said second operating voltage and said second further operating voltage into said other of said second transistor output electrodes and into said other of said first transistor output electrodes, respectively, to thereby vary the voltages applied to said gate electrodes of said respective field effect transistors, whereby the DC bias currents flowing through said respective field effect transistors are maintained substantially constant notwithstanding fluctuations in said second operating voltage and said second further operating voltage.

Claim 14

A transistor amplifier in accordance with claim 12 wherein said addition means comprise respective resistors for injecting fluctuations in said second operating voltage into the emitter electrode of said second transistor and for injecting fluctuations in said second further operating voltage into the emitter electrode of said first transistor.

Claim 15

A transistor amplifier comprising a first voltage source having a pair of terminals; a second voltage source having a pair of terminals; first and second transistors, the collector electrode of said first transistor being connected to one terminal of said first voltage source through a first resistor, the collector electrode of said second transistor being connected to the other terminal of said first voltage source through a second resistor, the emitter electrodes of said first and second transistors being connected to each other through third and fourth resistors, respectively, and each base electrode of said first and second transistors being supplied with an input signal to be amplified; a first field effect transistor having triode-type dynamic characteristics and including a gate electrode connected to the collector electrode of said first transistor, and source and drain electrodes coupled between one terminal of said second voltage source and an output terminal; a second field effect transistor having triode-type dynamic characteristics and including a gate electrode connected to the collector electrode of said second transistor and source and drain electrodes coupled between the other terminal of said second voltage source and said output terminal; a fifth resistor connected between the one terminal of said second voltage source and the emitter electrode of said first transistor so as to supply a portion of voltage fluctuations of the second voltage source to said first transistor; and a sixth resistor connected between the other terminal of said second voltage source and the emitter electrode of said second transistor so as to supply a portion of voltage fluctuations of the second voltage source to said second transistor; whereby DC biasing currents flowing through the drain and source electrodes of said first and second field effect transistors are stabilized notwithstanding voltage fluctuations of said second voltage source.

Claim 16

A transistor amplifier comprising a first voltage source having a pair of terminals; a second voltage source having a pair of terminals; first and second transistors, the collector electrode of said first transistor being connected to one terminal of said first voltage source through a first resistor, the collector electrode of said second transistor being connected to the other terminal of said first voltage source through a second resistor, the emitter electrodes of said first and second transistors being connected to each other through third and fourth resistors, respectively, and each base electrode of said first and second transistors being supplied with an input signal to be amplified; a first field effect transistor having triode-type dynamic characteristics and including a gate electrode connected to the collector electrode of said first transistor, and source and drain electrodes coupled between one terminal of said second voltage source and an output terminal; a second field effect transistor having triode-type dynamic characteristics and including a gate electrode connected to the collector electrode of said second transistor and source and drain electrodes coupled between the other terminal of said second voltage source and said output terminal; a fifth resistor connected between the one terminal of said second voltage source and the emitter electrode of said first transistor so as to supply a portion of voltage fluctuations of the second voltage source to said first transistor; and a sixth resistor connected between the other terminal of said second voltage source and the emitter electrode of said second transistor so as to supply a portion of voltage fluctuations of the second voltage source to said second transistor; whereby DC biasing currents flowing through the drain and source electrodes of said first and second field effect transistors are stabilized notwithstanding voltage fluctuations of said second voltage source.

Claim 17

A transistor amplifier in accordance with claim 14 wherein said first and second field effect transistors are connected in drain-follower configuration.

Claim 18

A transistor amplifier in accordance with claim 15 wherein said first transistor has NPN type conductivity and said second transistor has PNP type conductivity.

Claim 19

A transistor amplifier in accordance with claim 15 wherein the resistance values of said first through sixth resistors are equal to r 1 , r 2 , r 3 , r 4 , r 5 and r 6 , respectively, the amplification constants of said first and second field effect transistors are equal to μ 1 and μ 2 , respectively, and said resistance values have the relationship: ##EQU10##

Claim 20

A transistor amplifier in accordance with claim 15 wherein the resistance values of said first, second, fifth and sixth resistors are equal to r 1 , r 2 , r 5 and r 6 , respectively, the amplification constant of said first and second field effect transistors are equal to μ 1 and μ 2 , respectively, and said resistance values have the relationship: ##EQU11##

Claim 21

A transistor amplifier in accordance with claim 16 and further including a seventh resistor connected between the emitter electrode of said first transistor and the other terminal of said first voltage source; and an eighth resistor connected between the emitter electrode of said second transistor and said one terminal of said first voltage source; each of said seventh and eighth resistors supplying a portion of the voltage fluctuations of said first voltage source to said first and second transistors so as to stabilize the gate voltages of said first and second field effect transistors notwithstanding said first voltage source fluctuations.

Claim 22

A transistor amplifier in accordance with claim 19 wherein the resistance values of said first, second, third, fourth, seventh and eighth resistors are equal to r 1 , r 2 , r 3 , r 4 , r 7 and r 8 , respectively, and said resistance values have the relationship: ##EQU12##

Claim 23

A transistor amplifier in accordance with claim 19 wherein the resistance value of said first resistor is substantially equal to the resistance value of said seventh resistor; and the resistance value of said second resistor is substantially equal to the resistance value of said eighth resistor.

Claim 24

A transistor amplifier comprising a first voltage source having a pair of terminals; a second voltage source having a pair of terminals; first and second transistors, the collector electrode of said first transistor being connected to one terminal of said first voltage source through a first resistor, the collector electrode of said second transistor being connected to the other terminal of said first voltage source through a second resistor, the emitter electrodes of said first and second transistors being connected to each other through third and fourth resistors, respectively, and each base electrode of said first and second transistors being supplied with an input signal to be amplified; a first field effect transistor having triode-type dynamic characteristics and including a gate electrode, and source and drain electrodes coupled between one terminal of said second voltage source and an output terminal; a second field effect transistor having triode-type dynamic characteristics and including a gate electrode, and source and drain electrodes coupled between the other terminal of said second voltage source and said output terminal; a fifth resistor connected between the one terminal of said second voltage source and the emitter electrode of said first transistor so as to supply a portion of voltage fluctuations of the second voltage source to said first transistor; a sixth resistor connected between the other terminal of said second voltage source and the emitter electrode of said second transistor so as to supply a portion of voltage fluctuations of the second voltage source to said second transistor; a first emitter follower amplifier for coupling the collector electrode of said first transistor to the gate electrode of said second field effect transistor; and a second emitter follower amplifier for coupling the collector electrode of said second transistor to the gate electrode of said first field effect transistor; whereby DC biasing currents flowing through the drain and source electrodes of said first and second field effect transistors are stabilized notwithstanding voltage fluctuations of said second voltage source.

Claim 25

A transistor amplifier comprising a first voltage source having a pair of terminals; a second voltage source having a pair of terminals; first and second transistors, the collector electrode of said first transistor being connected to one terminal of said first voltage source through a first resistor, the collector electrode of said second transistor being connected to the other terminal of said first voltage source through a second resistor, the emitter electrodes of said first and second transistors being connected to each other through third and fourth resistors, respectively, and each base electrode of said first and second transistors being supplied with an input signal to be amplified; a first field effect transistor having triode-type dynamic characteristics and including a gate electrode, and source and drain electrodes coupled between one terminal of said second voltage source and an output terminal; a second field effect transistor having triode-type dynamic characteristics and including a gate electrode, and source and drain electrodes coupled between the other terminal of said second voltage source and said output terminal; a fifth resistor connected between the one terminal of said second voltage source and the emitter electrode of said first transistor so as to supply a portion of voltage fluctuations of the second voltage source to said first transistor; a sixth resistor connected between the other terminal of said second voltage source and the emitter electrode of said second transistor so as to supply a portion of voltage fluctuations of the second voltage source to said second transistor; a first emitter follower amplifier for coupling the collector electrode of said first transistor to the gate electrode of said second field effect transistor; and a second emitter follower amplifier for coupling the collector electrode of said second transistor to the gate electrode of said first field effect transistor; whereby DC biasing currents flowing through the drain and source electrodes of said first and second field effect transistors are stabilized notwithstanding voltage fluctuations of said second voltage source.

Claim 26

A transistor amplifier comprising: first and second voltage sources each having a pair of terminals; first and second transistors, the collector electrode of said first transistor being connected to one terminal of said first voltage source through a first resistor, the collector electrode of said second transistor being connected to the other terminal of said first voltage source through a second resistor, the emitter electrodes of said first and second transistors being connected to each other through third and fourth resistors, respectively, and the base electrodes of said first and second transistors being supplied with an input signal to be amplified; a third transistor having its base electrode connected to the collector electrode of said first transistor, its collector electrode connected to said one terminal of said first voltage source, and its emitter electrode connected to the other terminal of said first voltage source through a fifth resistor; a fourth transistor having its base electrode connected to the collector electrode of said second transistor, its collector electrode connected to the other terminal of said first voltage source, and its emitter electrode connected to said one terminal of said first voltage source through a sixth resistor; a first field effect transistor having triode-type dynamic characteristics and having its gate electrode connected to the emitter electrode of said fourth transistor, and its drain and source electrodes connected between one terminal of said second voltage source and an output terminal; a second field effect transistor having triode-type dynamic characteristics and having its gate electrode connected to the emitter electrode of said third transistor, and its drain and source electrodes connected between the other terminal of said second voltage source and the output terminal; a seventh resistor connected between the one terminal of said second voltage source and the emitter electrode of said first transistor to supply a portion of voltage fluctuations of the second voltage source to said first transistor; an eighth resistor connected between the other terminal of said second voltage source and the emitter electrode of said second transistor to supply a portion of the voltage fluctuations of said second voltage source to said second transistor; whereby DC biasing currents flowing through the drain and source electrodes of said first and second field effect transistors are stabilized notwithstanding voltage fluctuations of said second voltage source.

Claim 27

A transistor amplifier comprising: first and second voltage sources each having a pair of terminals; first and second transistors, the collector electrode of said first transistor being connected to one terminal of said first voltage source through a first resistor, the collector electrode of said second transistor being connected to the other terminal of said first voltage source through a second resistor, the emitter electrodes of said first and second transistors being connected to each other through third and fourth resistors, respectively, and the base electrodes of said first and second transistors being supplied with an input signal to be amplified; a third transistor having its base electrode connected to the collector electrode of said first transistor, its collector electrode connected to said one terminal of said first voltage source, and its emitter electrode connected to the other terminal of said first voltage source through a fifth resistor; a fourth transistor having its base electrode connected to the collector electrode of said second transistor, its collector electrode connected to the other terminal of said first voltage source, and its emitter electrode connected to said one terminal of said first voltage source through a sixth resistor; a first field effect transistor having triode-type dynamic characteristics and having its gate electrode connected to the emitter electrode of said fourth transistor, and its drain and source electrodes connected between one terminal of said second voltage source and an output terminal; a second field effect transistor having triode-type dynamic characteristics and having its gate electrode connected to the emitter electrode of said third transistor, and its drain and source electrodes connected between the other terminal of said second voltage source and the output terminal; a seventh resistor connected between the one terminal of said second voltage source and the emitter electrode of said first transistor to supply a portion of voltage fluctuations of the second voltage source to said first transistor; an eighth resistor connected between the other terminal of said second voltage source and the emitter electrode of said second transistor to supply a portion of the voltage fluctuations of said second voltage source to said second transistor; whereby DC biasing currents flowing through the drain and source electrodes of said first and second field effect transistors are stabilized notwithstanding voltage fluctuations of said second voltage source.

Claim 28

A transistor amplifier in accordance with claim 23 wherein each of said first and third transistors is of NPN type conductivity, and each of said second and fourth transistors is of PNP type conductivity.

Claim 29

A transistor amplifier in accordance with claim 23 wherein the resistance values of said first, second, third, fourth, seventh and eighth resistors are equal to r 1 , r 2 , r 3 , r 4 , r 7 and r 8 , respectively, the amplification constants of said first and second field effect transistors are equal to μ 1 and μ 2 , respectively, and said resistance values have the relationship: ##EQU13##

Claim 30

A transistor amplifier in accordance with claim 23 wherein the resistance values of said first, second, seventh and eighth resistors are equal to r 1 , r 2 , r 7 and r 8 , respectively, the amplification constants of said first and second field effect transistors are equal to μ 1 and μ 2 , respectively, and said resistance values have the relationship: ##EQU14##

Claim 31

A transistor amplifier in accordance with claim 23 and including a ninth resistor connected between the emitter electrode of said first transistor and the other terminal of said first voltage source; a tenth resistor connected between the emitter electrode of said second transistor and said one terminal of said first voltage source; said ninth and tenth resistors supplying a portion of the voltage fluctuations of said first voltage source to said first and second transistor emitter electrodes so as to stabilize the collector voltages of said first and second transistors notwithstanding said first voltage source fluctuations.

Claim 32

A transistor amplifier in accordance with claim 27 wherein the resistance values of said first, second, third, fourth, ninth and tenth resistors are equal to r 1 , r 2 , r 3 , r 4 , r 9 and r 10 , respectively, and said resistance values have the relationship: ##EQU15##

Claim 33

A transistor amplifier in accordance with claim 27 wherein the resistance value of said first resistor is substantially equal to the resistance value of said ninth resistor, and the resistance value of said second resistor is substantially equal to the resistance value of said tenth resistor.