US3973271A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having bonding pads extending over active regions
Assignee: Panasonic Holdings Corp
•
Filing: 1971-04-28
•
Granted: 1976-08-03
•
Expires: 1991-04-28
Abstract
Abstract A high-frequency transistor of planar structure having emitter and base regions of extremely fine structure to reduce the junction capacity. For the wire bond connection between said emitter or base region and an external lead wire, the transistor has the aluminium electrodes which swell and extend on the insulating film.
Inventors
- 👤 Tomisaburo Okumura
- 👤 Takatoshi Matsuo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 14:25
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48; C; C07; C07F; C07F7/00; C07F7/02; C07F7/08; C07F7/10; C10; C10M; C10M3/00; H10W20/482; H10W20/484; H10W72/00; H10W72/90; H10W72/50; H10W72/531; H10W72/536; H10W72/551; H10W72/552; H10W72/5522; H10W72/59; H10W72/931; H10W72/932
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
110 words
A planar type semiconductor device comprising a semiconductor body, base and emitter regions formed in one surface thereof, an insulator layer on said one surface, said insulator layer having apertures for electrode attachment to said base and emitter regions, and electrodes comprising a metallic film ohmically contacting said base and emitter regions through said apertures, said electrodes having narrow extensions and generally circular bonding pads extending over said insulating layer at the extremities of said extensions, said base and emitter regions and apertures having narrow extensions extending to beneath said bonding pads, wherein lead wires are bonded to said extensions of said base and emitter regions at said bonding pads.
Claim 2
Dependent Claim
110 words
A planar type semiconductor device comprising a semiconductor body, base and emitter regions formed in one surface thereof, an insulator layer on said one surface, said insulator layer having apertures for electrode attachment to said base and emitter regions, and electrodes comprising a metallic film ohmically contacting said base and emitter regions through said apertures, said electrodes having narrow extensions and generally circular bonding pads extending over said insulating layer at the extremities of said extensions, said base and emitter regions and apertures having narrow extensions extending to beneath said bonding pads, wherein lead wires are bonded to said extensions of said base and emitter regions at said bonding pads.
Claim 3
Dependent Claim
28 words
A planar type semiconductor device according to claim 1, wherein more than 50% of the total area of each of said bonding pads extends over said insulating layer.
References Cited (Backward Citations)
US3204321A
Cited
US3191070A
Cited
US3473979A
Cited
US3237271A
Cited
US3361592A
Cited
US3290570A
Cited
US3373323A
Cited
US3363150A
Cited
US3390025A
Cited
US3287610A
Cited
US3457631A
Cited
US3496427A
Cited
US3443173A
Cited
US3483440A
Cited
US3462349A
Cited
US3489964A
Cited
US3431468A
Cited
US3471755A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-08-03 | 1980-02-02 | 1980-08-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-08-03 | 1984-02-02 | 1984-08-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-08-03 | 1988-02-02 | 1988-08-03 | $7700.00 | Window Closed / Lapsed |