US3237271A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating semiconductor devices
Assignee: AT&T Inc
•
Filing: 1963-08-07
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Granted: 1966-03-01
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Expires: 1983-08-07
Abstract
No abstract record available.
Inventors
- 👤 Stephen R Arnold
- 👤 James T Nelson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 22:15
CPC Classifications
H; H10; H10D; H10D99/00; H10D10/00; H10P; H10P14/00; H10P14/40; H10P32/00; H10P95/00; H10P95/50; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/106; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528; Y10T428/12674
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
167 words
A METHOD OF FABRICATING A PLANAR TRANSISTOR COMPRISING THE STEPS OF DEPOSITING ON ONE SURACE OF A SEMICONDUCTOR BODY A FILM OF SILICON OXIDE, OPENING A CENTRAL AREA OF SAID SILICON OXIDE TO EXPOSE A PORTION OF SAID SURFACE, DIFFUSING INTO SAID BODY AT SAID EXPOSED SURFACE A SIGNIFICANT IMPURITY OF A TYPE OPPOSITE TO THAT OF THE CONTIGUOUS PORTION OF SADI BODY THERBY TO FORM A PN JUNCTION, DEPOSITING ON SAID SURFACE A LAYER OF A METAL OF THE FILM-FORMING TYPE, REMOVING PORTIONS OF SAID METAL LAYER TO EXPOSE AGAIN A CENTRAL PORTION OF SAID SURFACE OF SAID BODY, FORMING ON SAID METAL LAYER AN INSULATING FILM COMPOSED OF A COMPOUND OF SAID METAL, DEPOSITING OVER SAID FILM AND SAID EXPOSED AREA OF SAID SURFACE A LAYER OF A METLA HAVING SIGNIFICANT IMPURITY CHARACTERISTICS OPPOSITE TO THE OF SAID DIFFUSED PORTION, HEATING SAID ELEMENT TO ALLOY SAID METAL INTO SAID SEMICONDUCTOR BODY TO FORM A REGION OF CONDUCTIVITY TYPE OPPOSITE TO THAT OF SAID DIFFUSED PORTION.
Claim 2
Independent Claim
167 words
A METHOD OF FABRICATING A PLANAR TRANSISTOR COMPRISING THE STEPS OF DEPOSITING ON ONE SURACE OF A SEMICONDUCTOR BODY A FILM OF SILICON OXIDE, OPENING A CENTRAL AREA OF SAID SILICON OXIDE TO EXPOSE A PORTION OF SAID SURFACE, DIFFUSING INTO SAID BODY AT SAID EXPOSED SURFACE A SIGNIFICANT IMPURITY OF A TYPE OPPOSITE TO THAT OF THE CONTIGUOUS PORTION OF SADI BODY THERBY TO FORM A PN JUNCTION, DEPOSITING ON SAID SURFACE A LAYER OF A METAL OF THE FILM-FORMING TYPE, REMOVING PORTIONS OF SAID METAL LAYER TO EXPOSE AGAIN A CENTRAL PORTION OF SAID SURFACE OF SAID BODY, FORMING ON SAID METAL LAYER AN INSULATING FILM COMPOSED OF A COMPOUND OF SAID METAL, DEPOSITING OVER SAID FILM AND SAID EXPOSED AREA OF SAID SURFACE A LAYER OF A METLA HAVING SIGNIFICANT IMPURITY CHARACTERISTICS OPPOSITE TO THE OF SAID DIFFUSED PORTION, HEATING SAID ELEMENT TO ALLOY SAID METAL INTO SAID SEMICONDUCTOR BODY TO FORM A REGION OF CONDUCTIVITY TYPE OPPOSITE TO THAT OF SAID DIFFUSED PORTION.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-02-28 | 1969-08-30 | 1970-03-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-02-28 | 1973-08-30 | 1974-03-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-02-28 | 1977-08-30 | 1978-03-01 | $7700.00 | Window Closed / Lapsed |