Patent US3970869A successfully refreshed from Google Patents.
US3970869A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Low power driver
Assignee: United States Department of the Navy
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Filing: 1975-03-03
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Granted: 1976-07-20
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Expires: 1995-03-03
Abstract
Abstract The invention disclosed in this application is a unique semiconductor cirt for switching operations for a computer. It has low power drain characteristics and provides overload protection to the whole system. More specifically, it includes a metallic oxide silicon field effect transistor and a diode connected between a pair of transistors, the first of which receives the switching signal and the second that switches a device.
Inventors
- 👤 Charles L. Coats, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 15:07
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/08; H03K17/082; H03K17/0826; H03K17/04; H03K17/042; H03K17/04213
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
313 words
An improved low power driver switching circuit having capabilities of high speed switching between "on" and "off" and having a very low current drain, comprising: a. a first semi-conductor device having base, emitter, and collector electrodes; b. a second semi-conductor device having source, drain, base, and gate electrodes; c. a third semi-conductor device having anode and cathode electrodes; d. a fourth semi-conductor device having base, emitter and collector electrodes; e. an input power circuit having a positive terminal and a low voltage end and including a voltage dividing network; f. an output terminal coupled to a device to be switched; g. means for connecting said emitter electrode of said first semi-conductor device to the positive terminal of said input circuit, for connecting said collector electrode of said first semi-conductor to said output terminal, and for connecting said base electrode to said drain electrode of said second semi-conductor device; h. means for connecting said third semi-conductor device between said collector electrode of said first semi-conductor device and said gate electrode of said second semi-conductor device; i. means for connecting said source electrode of said second semi-conductor device to a predetermined point in said input voltage divider network; j. means connecting said fourth semi-conductor device between ground and one end of said voltage dividing network, said fourth semi-conductor device receiving switching signals and initiating switching operations; k. means for connecting said base electrode of said second semi-conductor device to said low voltage end of said input voltage divider network; said third semi-conductor device maintaining the voltage at said gate electrode of said second device at substantially the input voltage until switching operations is initiated; said voltage dividing network causing voltage at said source electrode to go negative with regard to the input voltage upon initiation of the switching operation, said voltage causing a very rapid switching in response to the initiation of the switching cycle.
Claim 2
Dependent Claim
313 words
An improved low power driver switching circuit having capabilities of high speed switching between "on" and "off" and having a very low current drain, comprising: a. a first semi-conductor device having base, emitter, and collector electrodes; b. a second semi-conductor device having source, drain, base, and gate electrodes; c. a third semi-conductor device having anode and cathode electrodes; d. a fourth semi-conductor device having base, emitter and collector electrodes; e. an input power circuit having a positive terminal and a low voltage end and including a voltage dividing network; f. an output terminal coupled to a device to be switched; g. means for connecting said emitter electrode of said first semi-conductor device to the positive terminal of said input circuit, for connecting said collector electrode of said first semi-conductor to said output terminal, and for connecting said base electrode to said drain electrode of said second semi-conductor device; h. means for connecting said third semi-conductor device between said collector electrode of said first semi-conductor device and said gate electrode of said second semi-conductor device; i. means for connecting said source electrode of said second semi-conductor device to a predetermined point in said input voltage divider network; j. means connecting said fourth semi-conductor device between ground and one end of said voltage dividing network, said fourth semi-conductor device receiving switching signals and initiating switching operations; k. means for connecting said base electrode of said second semi-conductor device to said low voltage end of said input voltage divider network; said third semi-conductor device maintaining the voltage at said gate electrode of said second device at substantially the input voltage until switching operations is initiated; said voltage dividing network causing voltage at said source electrode to go negative with regard to the input voltage upon initiation of the switching operation, said voltage causing a very rapid switching in response to the initiation of the switching cycle.
Claim 3
Dependent Claim
26 words
The improved switching circuit of claim 1 wherein said voltage dividing network includes a first resistance and a second resistance and said fourth semi-conductor device network.
Claim 4
Dependent Claim
25 words
The improved switching circuit of claim 2 wherein said second semi-conductor device is a metallic oxide silicon field effect transistor including an internal zener diode.
Claim 5
Dependent Claim
26 words
The improved switching circuit of claim 3 wherein an overload condition is cleared by actuating said collector gate of said MOSFET transistor to the off position.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-07-20 | 1980-01-19 | 1980-07-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-07-20 | 1984-01-19 | 1984-07-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-07-20 | 1988-01-19 | 1988-07-20 | $7700.00 | Window Closed / Lapsed |