US3967987A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Epitazy of heterojunction devices
Assignee: Globe Union Inc
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Filing: 1972-03-15
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Granted: 1976-07-06
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Expires: 1992-03-15
Abstract
Abstract A method of producing light emitting diodes of high quantum efficiency in mass production by utilizing an epitaxial deposition from a small size melt such that the substrate itself serves as a saturation source. A silicon doped gallium arsenide wafer is cleaned and etched by normal means and subsequently the wafer is precoated with a properly doped gallium master melt. The coated wafers are inserted into an epitaxial furnace and the gallium master melt effects solution of a portion of the gallium arsenide monocrystal substrate and finally the entire wafer is cooled, maintaining a temperature gradient causing epitaxial growth on the substrate.
Inventors
- 👤 Addison Brooke Jones
- 👤 Herbert F. Matare
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 13:31
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10H; H10H20/00; H10H20/80; H10P14/26; H10P14/263; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; Y; Y10; Y10S; Y10S438/00; Y10S438/955
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
70 words
A method of producing an epitaxial layer on a crystalline semiconductor substrate comprising precoating the semiconductor substrate with a portion of a master melt, depositing a selected quantity of the master melt, heating the deposited master melt and the semiconductor substrate to melt a portion of the substrate and controlling the cooling of the substrate and the master melt so that a high-quality epitaxial layer is grown on the substrate.
Claim 2
Independent Claim
70 words
A method of producing an epitaxial layer on a crystalline semiconductor substrate comprising precoating the semiconductor substrate with a portion of a master melt, depositing a selected quantity of the master melt, heating the deposited master melt and the semiconductor substrate to melt a portion of the substrate and controlling the cooling of the substrate and the master melt so that a high-quality epitaxial layer is grown on the substrate.
Claim 3
Dependent Claim
23 words
The method as defined in claim 1 wherein the master melt is an alloy, designed to produce a doped ternary compound semiconductor layer.
Claim 4
Dependent Claim
15 words
The method as defined in claim 2 wherein the ternary compound is gallium aluminum arsenide.
Claim 5
Dependent Claim
16 words
The method as defined in claim 1 wherein the substrate is gallium arsenide doped with silicon.
Claim 6
Dependent Claim
24 words
The method as defined in claim 1 wherein said heating is effected by moving said semiconductor substrate with said master melt through a furnace.
Claim 7
Dependent Claim
27 words
A method as defined in claim 1 wherein said semiconductor substrate while coated with said melt covered with a graphite disk is heated in a graphite crucible.
Claim 8
Dependent Claim
18 words
The method as defined in claim 1 wherein said semiconductor substrate is in the form of a wafer.
Claim 9
Dependent Claim
29 words
The method as defined in claim 1 wherein a gold-germanium contact serves as both an ohmic contact and an eutectic alloy for bonding the device to a metallic surface.
Claim 10
Dependent Claim
22 words
The method as defined in claim 1 wherein one or more constituents of the epitaxial layer are derived solely from the substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-07-06 | 1980-01-05 | 1980-07-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-07-06 | 1984-01-05 | 1984-07-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-07-06 | 1988-01-05 | 1988-07-06 | $7700.00 | Window Closed / Lapsed |