Silver halide element containing an organic semiconductor

Claim 1

A semiconductor element comprising a support having thereon a silver halide emulsion layer and a layer comprising a semiconductor composition comprising a binder and a semiconductor having organic solvent solubility and represented by the expression: D[A].sub.q wherein: D represents a moiety having the structure: ##SPC5## in which: J represents either R 1 or a group having the formula ##SPC6## K represents either R 3 or a group having the formula ##SPC7## R 1 and R 4 are each selected from the group consisting of a hydrogen atom, a hydroxy radical, a lower alkyl radical, a lower alkoxy radical, an amino radical, an aryl radical, an acyl radical, a carboxylate radical, a thio radical, a nitrate radical, a sulfonate radical, a halogen atom and a cyano radical; R 2 and R 3 each represent (1) an uncharged radical selected from the group consisting of oxo, imino and thioxo radicals or (2) a charged radical selected from the group consisting of alkoxonium, iminium, and sulfonium, radicals; and n and p are each integers having the following combinations of values: when J represents and K represents R.sub.3, p = 0 n = 0, 1, 2, 3, 4, 5 p = 1 n = 0, 1, 2, 3 p = 2 n = 0, 1 when J represents R.sub.1 and K represents R.sub.3, p = 0 n = 0, 1, 2, 3, 4, 5, 6 p = 1 n = 0, 1, 2, 3, 4 p = 2 n = 0, 1, 2 p = 3 n = 0 when J represents R.sub.1 and K represents p = 0 n = 0, 1, 2, 3, 4, 5 p = 1 n = 0, 1, 2, 3 p = 2 n = 0, 1; A is an acid when R 2 and R 3 are each an uncharged radical and when R 2 and/or R 3 is a charged radical, A is an anion derived from an acid; and q represents the number of A moieties associated with each D and is a positive integer that is greater than 0 and less than or equal to the number of amine groups in the D moiety.