US3963498A
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Silver halide element containing an organic semiconductor
Assignee: Eastman Kodak Co
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Filing: 1974-06-25
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Granted: 1976-06-15
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Expires: 1994-06-25
Abstract
Abstract The amine salts of linear polyaniline compounds, including substituted polyaniline compounds, are useful, semiconductors. These materials are generally soluble in popular organic solvents and have resistivities between 10 - 3 and 10 9 ohm-cm. These compounds are useful in the formation of semiconductor compositions, including self-supporting films, and various semiconductor elements such as antistatic films and fibers.
Inventors
- 👤 Donald J. Trevoy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 06:20
CPC Classifications
H; H10; H10K; H10K10/00; H10K10/20; H10K10/29; G; G03; G03C; G03C1/00; G03C1/76; G03C1/85; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/06; G03G5/0601; G03G5/0612; G03G5/0614; G03G5/06142; G03G5/10; H10K85/00; H10K85/10; H10K85/111
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
360 words
A semiconductor element comprising a support having thereon a silver halide emulsion layer and a layer comprising a semiconductor composition comprising a binder and a semiconductor having organic solvent solubility and represented by the expression: D[A].sub.q wherein: D represents a moiety having the structure: ##SPC5## in which: J represents either R 1 or a group having the formula ##SPC6## K represents either R 3 or a group having the formula ##SPC7## R 1 and R 4 are each selected from the group consisting of a hydrogen atom, a hydroxy radical, a lower alkyl radical, a lower alkoxy radical, an amino radical, an aryl radical, an acyl radical, a carboxylate radical, a thio radical, a nitrate radical, a sulfonate radical, a halogen atom and a cyano radical; R 2 and R 3 each represent (1) an uncharged radical selected from the group consisting of oxo, imino and thioxo radicals or (2) a charged radical selected from the group consisting of alkoxonium, iminium, and sulfonium, radicals; and n and p are each integers having the following combinations of values: when J
represents
and K represents R.sub.3,
p = 0 n = 0, 1, 2, 3, 4, 5
p = 1 n = 0, 1, 2, 3
p = 2 n = 0, 1
when J represents R.sub.1 and
K represents R.sub.3,
p = 0 n = 0, 1, 2, 3, 4, 5, 6
p = 1 n = 0, 1, 2, 3, 4
p = 2 n = 0, 1, 2
p = 3 n = 0
when J represents R.sub.1 and
K represents p = 0 n = 0, 1, 2, 3, 4, 5
p = 1 n = 0, 1, 2, 3
p = 2 n = 0, 1; A is an acid when R 2 and R 3 are each an uncharged radical and when R 2 and/or R 3 is a charged radical, A is an anion derived from an acid; and q represents the number of A moieties associated with each D and is a positive integer that is greater than 0 and less than or equal to the number of amine groups in the D moiety.
Claim 2
Dependent Claim
360 words
A semiconductor element comprising a support having thereon a silver halide emulsion layer and a layer comprising a semiconductor composition comprising a binder and a semiconductor having organic solvent solubility and represented by the expression: D[A].sub.q wherein: D represents a moiety having the structure: ##SPC5## in which: J represents either R 1 or a group having the formula ##SPC6## K represents either R 3 or a group having the formula ##SPC7## R 1 and R 4 are each selected from the group consisting of a hydrogen atom, a hydroxy radical, a lower alkyl radical, a lower alkoxy radical, an amino radical, an aryl radical, an acyl radical, a carboxylate radical, a thio radical, a nitrate radical, a sulfonate radical, a halogen atom and a cyano radical; R 2 and R 3 each represent (1) an uncharged radical selected from the group consisting of oxo, imino and thioxo radicals or (2) a charged radical selected from the group consisting of alkoxonium, iminium, and sulfonium, radicals; and n and p are each integers having the following combinations of values: when J
represents
and K represents R.sub.3,
p = 0 n = 0, 1, 2, 3, 4, 5
p = 1 n = 0, 1, 2, 3
p = 2 n = 0, 1
when J represents R.sub.1 and
K represents R.sub.3,
p = 0 n = 0, 1, 2, 3, 4, 5, 6
p = 1 n = 0, 1, 2, 3, 4
p = 2 n = 0, 1, 2
p = 3 n = 0
when J represents R.sub.1 and
K represents p = 0 n = 0, 1, 2, 3, 4, 5
p = 1 n = 0, 1, 2, 3
p = 2 n = 0, 1; A is an acid when R 2 and R 3 are each an uncharged radical and when R 2 and/or R 3 is a charged radical, A is an anion derived from an acid; and q represents the number of A moieties associated with each D and is a positive integer that is greater than 0 and less than or equal to the number of amine groups in the D moiety.
Claim 3
Dependent Claim
27 words
A semiconductor element as described in claim 1, wherein A is selected from the group consisting of an inorganic acid, an organic acid and an acidic polymer.
Claim 4
Dependent Claim
57 words
A semiconductor element as described in claim 1, wherein the semiconductor is an amine salt of a member selected from sulfuric acid, hydrobromic acid, fluoboric acid, benzoic acid p-toluic acid or p-toluenesulfonic acid together with a member selected from the group consisting of N-{p-[4-(p-methoxy anilino) anilino] phenyl}-1,4-benzoquinone imine, N-[p-(1,4-benzoquinone diimino) phenyl]-N'-phenyl-1,4-benzoquinone diimine, N-(p-anilinophenyl)-N'-(p-aminophenyl)-1,4-benzoquinone diimine, and N-[p-(4-anilino)-anilinophenyl]-1,4-benzoquinone imine.
Claim 5
Dependent Claim
23 words
A semiconductor element as described in claim 1, wherein the silver halide emulsion and semiconductor composition are on opposite sides of the support.
Claim 6
Dependent Claim
17 words
A semiconductor element as described in claim 4 wherein a protective layer is over the semiconductor composition.
Claim 7
Dependent Claim
15 words
A semiconductor element as described in claim 5 wherein the protective layer comprises poly(methyl methacrylate).
Claim 8
Dependent Claim
37 words
A semiconductor element as described in claim 1, wherein the silver halide emulsion and semiconductor composition are on the same side of the support, and have a protective layer between the silver halide and the semiconductor composition.
Claim 9
Dependent Claim
15 words
A semiconductor element as described in claim 7, wherein the protective layer comprises poly(methyl methacrylate).
Claim 10
Dependent Claim
308 words
A semiconductor element comprising a support having thereon a silver halide emulsion layer and a layer comprising a semiconductor composition comprising a binder and a semiconductor having organic solvent solubility and represented by the expression: D[A].sub.q wherein: D represents a moiety having the structure: ##SPC8## in which: J represents either R 1 or a group having the formula ##SPC9## K represents either R 3 or a group having the formula ##SPC10## R 1 and R 4 are each selected from the group consisting of a hydrogen atom, a hydroxy radical, a lower alkyl radical, a lower alkoxy radical, an amino radical, an aryl radical, an acyl radical, a carboxylate radical, a thio radical, a nitrate radical, a sulfonate radical, a halogen atom and a cyano radical; R 2 and R 3 each represent (1) and uncharged radical selected from the group consisting of oxo, imino and thioxo radicals or (2) a charged radical selected from the group consisting of alkoxonium, iminium, and sulfonium radicals; and n and p are each integers having the following combinations of values: when J represents
and K represents R.sub.3,
p = 0 n = 0, 1, 2, 3
when J represents R.sub.1 and
K represents R.sub.3, p = 0 n = 0, 1, 2
p = 1 n = 0, 1
when J represents R.sub.1 and
K represents p = 0 n = 0, 1, 2
p = 1 n = 0; A is an acid when R 2 and R 3 are each an uncharged radical and when R 2 and/or R 3 is a charged radical, A is an anion derived from an acid; and q represents the number of A moieties associated with each D and is a positive integer that is greater than 0 and less than or equal to the number of amine groups in the D moiety.
Claim 11
Dependent Claim
308 words
A semiconductor element comprising a support having thereon a silver halide emulsion layer and a layer comprising a semiconductor composition comprising a binder and a semiconductor having organic solvent solubility and represented by the expression: D[A].sub.q wherein: D represents a moiety having the structure: ##SPC8## in which: J represents either R 1 or a group having the formula ##SPC9## K represents either R 3 or a group having the formula ##SPC10## R 1 and R 4 are each selected from the group consisting of a hydrogen atom, a hydroxy radical, a lower alkyl radical, a lower alkoxy radical, an amino radical, an aryl radical, an acyl radical, a carboxylate radical, a thio radical, a nitrate radical, a sulfonate radical, a halogen atom and a cyano radical; R 2 and R 3 each represent (1) and uncharged radical selected from the group consisting of oxo, imino and thioxo radicals or (2) a charged radical selected from the group consisting of alkoxonium, iminium, and sulfonium radicals; and n and p are each integers having the following combinations of values: when J represents
and K represents R.sub.3,
p = 0 n = 0, 1, 2, 3
when J represents R.sub.1 and
K represents R.sub.3, p = 0 n = 0, 1, 2
p = 1 n = 0, 1
when J represents R.sub.1 and
K represents p = 0 n = 0, 1, 2
p = 1 n = 0; A is an acid when R 2 and R 3 are each an uncharged radical and when R 2 and/or R 3 is a charged radical, A is an anion derived from an acid; and q represents the number of A moieties associated with each D and is a positive integer that is greater than 0 and less than or equal to the number of amine groups in the D moiety.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-06-15 | 1979-12-15 | 1980-06-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-06-15 | 1983-12-15 | 1984-06-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-06-15 | 1987-12-15 | 1988-06-15 | $7700.00 | Window Closed / Lapsed |