US3962715A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High-speed, high-current spike suppressor and method for fabricating same
Assignee: Yeshiva University
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Filing: 1974-12-03
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Granted: 1976-06-08
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Expires: 1994-12-03
Abstract
Abstract There is disclosed a spike suppressor which is capable of switching very high currents at very high speeds. Typically, a current in the order of 80 amperes can be switched in less than 1 nanosecond. The device is also capable of dissipating high power. Typically, 80-ampere, 200-nanosecond pulses at a repetition rate of 10 per second can be tolerated. The device consists of a relatively thick layer (greater than 1 micron) of a refractory transition metal oxide such as NbO 2 grown on a conducting refractory substrate. The metal oxide is polycrystalline and can be grown in several different ways.
Inventors
- 👤 Paul M. Raccah
- 👤 Teodoro Halpern
- 👤 Soo Hee Shin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:40
CPC Classifications
H; H02; H02H; H02H9/00; H02H9/04; H02H9/044; H10; H10N; H10N70/00; H10N70/011; H10N70/021; H10N70/20; H10N70/801; H10N70/881; H10N70/883; H10N70/8833
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
62 words
A spike suppressor comprising a pair of electrodes, a conducting refractory substrate of single-crystal NbO, and at least one layer of refractory crystalline NbO 2 on said substrate, said substrate and at least one crystalline layer of NbO 2 being secured between said pair of electrodes, and said at least one crystalline layer having a total thickness of at least 1 micron.
Claim 2
Dependent Claim
62 words
A spike suppressor comprising a pair of electrodes, a conducting refractory substrate of single-crystal NbO, and at least one layer of refractory crystalline NbO 2 on said substrate, said substrate and at least one crystalline layer of NbO 2 being secured between said pair of electrodes, and said at least one crystalline layer having a total thickness of at least 1 micron.
Claim 3
Dependent Claim
20 words
A spike suppressor in accordance with claim 1 wherein at least one of said electrodes is a filament pressure contact.
Claim 4
Dependent Claim
66 words
A spike suppressor comprising a pair of electrodes, a conducting refractory substrate of single-crystal TiO, and at least one layer of refractory crystalline Ti 3 O 5 on said substrate, said substrate and at least one crystalline layer of Ti 3 O 5 being secured between said pair of electrodes, and said at least one crystalline layer having a total thickness of at least 1 micron.
Claim 5
Dependent Claim
66 words
A spike suppressor comprising a pair of electrodes, a conducting refractory substrate of single-crystal TiO, and at least one layer of refractory crystalline Ti 3 O 5 on said substrate, said substrate and at least one crystalline layer of Ti 3 O 5 being secured between said pair of electrodes, and said at least one crystalline layer having a total thickness of at least 1 micron.
Claim 6
Dependent Claim
20 words
A spike suppressor in accordance with claim 3 wherein at least one of said electrodes is a filament pressure contact.
Claim 7
Independent Claim
67 words
The method of making a spike suppressor comprising the steps of establishing a conducting refractory substrate of NbO, growing on said substrate a refractory crystalline layer of NbO 2 , and forming a pair of electrodes across said substrate and crystalline layer, said refractory crystalline layer being grown to an extent such that the thickness of the NbO 2 between said pair of electrodes exceeds 1 micron.
Claim 8
Independent Claim
67 words
The method of making a spike suppressor comprising the steps of establishing a conducting refractory substrate of NbO, growing on said substrate a refractory crystalline layer of NbO 2 , and forming a pair of electrodes across said substrate and crystalline layer, said refractory crystalline layer being grown to an extent such that the thickness of the NbO 2 between said pair of electrodes exceeds 1 micron.
Claim 9
Dependent Claim
43 words
The method of making a spike suppressor in accordance with claim 5 wherein the NbO substrate is doped with titanium or vanadium in an amount which results in a desired threshold voltage for the spike suppressor following the growth of said crystalline layer.
Claim 10
Dependent Claim
27 words
The method of making a spike suppressor in accordance with claim 6 wherein at least one of the electrodes which is formed is a filament pressure contact.
Claim 11
Independent Claim
72 words
The method of making a spike suppressor comprising the steps of establishing a conducting refractory substrate of single-crystal TiO, growing on said substrate a refractory crystalline layer of Ti 3 O 5 , and forming a pair of electrodes across said substrate and crystalline layer, said refractory crystalline layer being grown to an extent such that the thickness of the Ti 3 O 5 between said pair of electrodes exceeds 1 micron.
Claim 12
Independent Claim
72 words
The method of making a spike suppressor comprising the steps of establishing a conducting refractory substrate of single-crystal TiO, growing on said substrate a refractory crystalline layer of Ti 3 O 5 , and forming a pair of electrodes across said substrate and crystalline layer, said refractory crystalline layer being grown to an extent such that the thickness of the Ti 3 O 5 between said pair of electrodes exceeds 1 micron.
Claim 13
Dependent Claim
27 words
The method of making a spike suppressor in accordance with claim 8 wherein at least one of the electrodes which is formed is a filament pressure contact.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-06-08 | 1979-12-08 | 1980-06-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-06-08 | 1983-12-08 | 1984-06-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-06-08 | 1987-12-08 | 1988-06-08 | $7700.00 | Window Closed / Lapsed |