Abstract A thin film magnetic storage device consisting of a flat support to which a ferromagnetic layer which areas of different coercive force is applied, the low coercive force areas being surrounded by high coercive force areas, and further consisting of electric conductors extending in planes parallel with the support and used to produce the magnetic fields required for the propagation of magnetic domains in the low coercive force areas. The low coercive force areas are provided in the shape of strip-like channels, and the electric conductors are arranged in two separate planes such that they intersect the channels at right angles and that the conductors of one plane, at points of intersecton with the channels are situated above the gaps between the conductors of the second plane, and that the width of the conductors at points of intersecton with the channels is at least as great as the channel width. Thin film magnetic storage devices having this structure are simpler and cheaper to manufacture and are characterized by higher noise immunity and a low power requirement.
An improved thin film magnetic storage device of the type having a flat support to which a ferromagnetic layer is applied, said layer containing areas of low coercive force which are in the shape of strip-like channels and which are surrounded by areas of higher coercive force, and wherein electric conductors extend in planes parallel with said flat support which are adapted for the flow of electrical signal current which establishes the magnetic fields needed to nucleate, propagate, read and erase the magnetic domains in the low coercive force areas, the improvement comprising: said electric conductors being arranged in two separate planes in a manner such that they intersect said channels perpendicularly, the conductors of one plane at the point of intersection with said channels being situated about the gaps between the conductors of the second plane.
Claim 2
Dependent Claim
137 words
An improved thin film magnetic storage device of the type having a flat support to which a ferromagnetic layer is applied, said layer containing areas of low coercive force which are in the shape of strip-like channels and which are surrounded by areas of higher coercive force, and wherein electric conductors extend in planes parallel with said flat support which are adapted for the flow of electrical signal current which establishes the magnetic fields needed to nucleate, propagate, read and erase the magnetic domains in the low coercive force areas, the improvement comprising: said electric conductors being arranged in two separate planes in a manner such that they intersect said channels perpendicularly, the conductors of one plane at the point of intersection with said channels being situated about the gaps between the conductors of the second plane.
Claim 3
Dependent Claim
33 words
The improved thin film magnetic storage device of claim 1 wherein the two separate planes in which said electric conductors are arranged are situated on either side of a flexible, electrically insulating support.