Patent US2450528A successfully refreshed from Google Patents.
US3962062A
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Sputtered dielectric thin films
Assignee: Nortel Networks Ltd
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Filing: 1974-12-09
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Granted: 1976-06-08
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Expires: 1994-12-09
Abstract
Abstract Sputtered thin films, particularly of tantalum and niobium, are prepared having predetermined optical and dielectric properties by controlling the flow rate of O 2 in relation to the flow rate of N 2 . By controllably varying the ratio, differing characteristics can be obtained. Thus a stepwise or a continuous variation in refractive index can be obtained. Films show low optical losses and birefringent properties, and are particularly suitable for optical waveguides, capacitors and filters.
Inventors
- 👤 Sidney Ivor Joseph Ingrey
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 06:37
CPC Classifications
G; G02; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/13; G02B6/132; C; C03; C03C; C03C17/00; C03C17/22; C03C17/225; C23; C23C; C23C14/00; C23C14/0021; C23C14/0036; C23C14/0084; C03C2217/00; C03C2217/20; C03C2217/28; C03C2217/281; C03C2218/00; C03C2218/10; C03C2218/15; C03C2218/154
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
124 words
A method of sputtering a thin dielectric film containing one of tantalum and niobium in a gaseous atmosphere consisting of nitrogen and oxygen, comprising: positioning a substrate on a holder in a sealable chamber; positioning a cathode in said chamber, said cathode made of material to be sputtered; evacuating the chamber to a predetermined high vacuum; feeding oxygen and nitrogen into the chamber, and maintaining a flow of said gases through the chamber; adjusting the flow of said gases to give a predetermined pressure in the chamber; varying the flows of said gases as necessary to give a predetermined ratio of said gases in the chamber; moving said substrate into sputtering position relative to said cathode; sputtering a thin dielectric film on said substrate.
Claim 2
Independent Claim
124 words
A method of sputtering a thin dielectric film containing one of tantalum and niobium in a gaseous atmosphere consisting of nitrogen and oxygen, comprising: positioning a substrate on a holder in a sealable chamber; positioning a cathode in said chamber, said cathode made of material to be sputtered; evacuating the chamber to a predetermined high vacuum; feeding oxygen and nitrogen into the chamber, and maintaining a flow of said gases through the chamber; adjusting the flow of said gases to give a predetermined pressure in the chamber; varying the flows of said gases as necessary to give a predetermined ratio of said gases in the chamber; moving said substrate into sputtering position relative to said cathode; sputtering a thin dielectric film on said substrate.
Claim 3
Independent Claim
133 words
A method of sputtering a thin dielectric film containing one of tantalum and niobium, in an atmosphere consisting of nitrogen and oxygen, comprising: positioning a substrate on a holder in a chamber; positioning a cathode in said chamber, said cathode made of material to be sputtered; evacuating said chamber to a predetermined high vacuum; feeding oxygen and nitrogen gases separately into said chamber and adjusting the flows to give a predetermined pressure; adjusting the relative flows of oxygen and nitrogen to give a predetermined ratio of said gases in said chamber; sputtering a thin film on said substrate; varying the relative flows of oxygen and nitrogen as necessary to give a predetermined variation in gas ratio in said chamber during sputtering to vary the ratio of oxygen to nitrogen included in said film.
Claim 4
Independent Claim
133 words
A method of sputtering a thin dielectric film containing one of tantalum and niobium, in an atmosphere consisting of nitrogen and oxygen, comprising: positioning a substrate on a holder in a chamber; positioning a cathode in said chamber, said cathode made of material to be sputtered; evacuating said chamber to a predetermined high vacuum; feeding oxygen and nitrogen gases separately into said chamber and adjusting the flows to give a predetermined pressure; adjusting the relative flows of oxygen and nitrogen to give a predetermined ratio of said gases in said chamber; sputtering a thin film on said substrate; varying the relative flows of oxygen and nitrogen as necessary to give a predetermined variation in gas ratio in said chamber during sputtering to vary the ratio of oxygen to nitrogen included in said film.
Claim 5
Dependent Claim
36 words
A method as claimed in claim 2 including continuously carrying the relative flows of oxygen and nitrogen in a predetermined manner during sputtering to continuously vary the ratio of oxygen to nitrogen included in said film.
Claim 6
Dependent Claim
25 words
A method as claimed in claim 2 including varying the relative flows of oxygen and nitrogen at predetermined time intervals by predetermined amounts during sputtering.
Claim 7
Independent Claim
132 words
A method of sputtering a thin dielectric film containing one of tantalum and niobium, in an atmosphere consisting of nitrogen and oxygen, said film having predetermined optical properties, comprising positioning a substrate in a chamber, and providing a cathode composed of said one of tantalum and niobium; evacuating said chamber to a predetermined vacuum; feeding oxygen and nitrogen gases separately into said chamber; adjusting the flows of oxygen and nitrogen to give a predetermined pressure in said chamber and varying the relative flows to give a predetermined ratio of said gases in the chamber; and sputtering a thin film containing said one of tantalum and niobium on said substrate to form a thin film having a predetermined ratio of oxygen to nitrogen included in said film to give said predetermined optical property.
Claim 8
Independent Claim
132 words
A method of sputtering a thin dielectric film containing one of tantalum and niobium, in an atmosphere consisting of nitrogen and oxygen, said film having predetermined optical properties, comprising positioning a substrate in a chamber, and providing a cathode composed of said one of tantalum and niobium; evacuating said chamber to a predetermined vacuum; feeding oxygen and nitrogen gases separately into said chamber; adjusting the flows of oxygen and nitrogen to give a predetermined pressure in said chamber and varying the relative flows to give a predetermined ratio of said gases in the chamber; and sputtering a thin film containing said one of tantalum and niobium on said substrate to form a thin film having a predetermined ratio of oxygen to nitrogen included in said film to give said predetermined optical property.
Claim 9
Dependent Claim
42 words
A method as claimed in claim 5 including varying the relative flows of oxygen and nitrogen during sputtering to produce a predetermined variation in the ratio of oxygen and nitrogen and to form a thin film having a predetermined variable optical property.
Claim 10
Dependent Claim
70 words
A method as claimed in claim 5 including varying the relative flows of oxygen and nitrogen in a stepwise manner at a predetermined time intervals and by predetermined amounts, during sputtering, and forming a thin film composed of a series of thin layers, each layer having a predetermined ratio of oxygen and nitrogen included therein to produce an optical property which varies in a predetermined manner from the preceding layer.
Claim 11
Independent Claim
128 words
A method of sputtering a thin dielectric film containing one of tantalum and niobium, in an atmosphere consisting of nitrogen and oxygen, said film having predetermined dielectric properties comprising: positioning a substrate in a chamber and providing a cathode composed of one of tantalum and niobium; evacuating said chamber to a predetermined vacuum; feeding oxygen and nitrogen gases separately into said chamber; adjusting the flows of oxygen and nitrogen to give a predetermined pressure in said chamber and varying the relative flows to give a predetermined ratio of said gases in the chamber; and sputtering a thin film containing said one of tantalum and niobium on said substrate to form a thin film having a predetermined ratio of oxygen to nitrogen included therein to give predetermined dielectric property.
Claim 12
Independent Claim
128 words
A method of sputtering a thin dielectric film containing one of tantalum and niobium, in an atmosphere consisting of nitrogen and oxygen, said film having predetermined dielectric properties comprising: positioning a substrate in a chamber and providing a cathode composed of one of tantalum and niobium; evacuating said chamber to a predetermined vacuum; feeding oxygen and nitrogen gases separately into said chamber; adjusting the flows of oxygen and nitrogen to give a predetermined pressure in said chamber and varying the relative flows to give a predetermined ratio of said gases in the chamber; and sputtering a thin film containing said one of tantalum and niobium on said substrate to form a thin film having a predetermined ratio of oxygen to nitrogen included therein to give predetermined dielectric property.
Claim 13
Dependent Claim
45 words
A method as claimed in claim 8 including varying the relative flows of oxygen and nitrogen during sputtering to produce a predetermined variation in the ratio of oxygen and nitrogen in said film and to form a thin film having a predetermined variable dielectric property.
Claim 14
Dependent Claim
78 words
A method as claimed in claim 8 including varying the relative flows of oxygen and nitrogen in a stepwise manner at predetermined time intervals and by predetermined amounts, during sputtering, and forming a thin film composed of a series of thin layers, each layer having a predetermined ratio of oxygen to nitrogen included therein to give a dielectric property which varies in a predetermined manner from the oxygen to nitrogen ratio and dielectric property of the preceding layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-06-08 | 1979-12-08 | 1980-06-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-06-08 | 1983-12-08 | 1984-06-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-06-08 | 1987-12-08 | 1988-06-08 | $7700.00 | Window Closed / Lapsed |