Patent US3962027A successfully refreshed from Google Patents.
US3962027A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Bi4 Ti3 O12 Single crystal growth from saturated seeded solution
Assignee: US Philips Corp
•
Filing: 1974-09-09
•
Granted: 1976-06-08
•
Expires: 1994-09-09
Abstract
Abstract Method of growing single crystal of Bi 4 Ti 3 O 12 by a top-seeded growth technique. A solution of TiO 2 is a solvent consisting of Bi 2 O 3 with/without B 2 O 3 is prepared. The temperature of the solution is adjusted to a value which is not more than 5°C above the saturation temperature of the solution, and is maintained at this value while the degree of saturation of the solution is increased by dissolving TiO 2 . A Bi 4 Ti 3 O 12 seed crystal is then lowered into the solution which is gradually cooled so as to grow a single crystal. The transparency of crystals grown from a solution containing B 2 O 3 in addition to Bi 2 O 3 is better than that of crystals grown from solutions in which the solvent consists solely of Bi 2 O 3 .
Inventors
- 👤 Timothy Michael Bruton
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 03:43
CPC Classifications
C; C30; C30B; C30B17/00; C30B15/00; C30B29/00; C30B29/10; C30B29/16; C30B29/22; C30B29/32; C30B9/00
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
122 words
A method of growing a single crystal of Bi 4 Ti 3 O 12 , said method comprising, preparing a solution of TiO 2 in Bi 2 O 3 , adjusting the temperature of the solution to a temperature of about 5°C above the saturation temperature of the solution, maintaining the solution at said temperature while immersing polycrystalline TiO 2 into said solution until the solution contains a saturating amount of TiO 2 , removing the undissolved polycrystalline TiO 2 from the solution, immersing a Bi 4 Ti 3 O 12 seed crystal into said solution maintained at said temperature and then slowly cooling said solution thereby to cause growth of a single crystal of Bi 4 Ti 3 O 12 .
Claim 2
Independent Claim
122 words
A method of growing a single crystal of Bi 4 Ti 3 O 12 , said method comprising, preparing a solution of TiO 2 in Bi 2 O 3 , adjusting the temperature of the solution to a temperature of about 5°C above the saturation temperature of the solution, maintaining the solution at said temperature while immersing polycrystalline TiO 2 into said solution until the solution contains a saturating amount of TiO 2 , removing the undissolved polycrystalline TiO 2 from the solution, immersing a Bi 4 Ti 3 O 12 seed crystal into said solution maintained at said temperature and then slowly cooling said solution thereby to cause growth of a single crystal of Bi 4 Ti 3 O 12 .
Claim 3
Dependent Claim
23 words
The method of claim 1 wherein a solution of TiO 2 in Bi 2 O 3 and B 2 O 3 is prepared.
Claim 4
Dependent Claim
63 words
A method as claimed in claim 2, wherein the solution consists of a solution of TiO 2 in a mixture of Bi 2 O 3 and B 2 O 3 , which solution consists of 12 mole % TiO 2 , from 78 to 44 mole % Bi 2 O 3 and from 10 to 44 mole % B 2 O 3 .
Claim 5
Dependent Claim
32 words
A method as claimed in claim 1, wherein the solution consists of a solution of TiO 2 in Bi 2 O 3 containing from 12 to 17 mole % TiO 2 .
Claim 6
Dependent Claim
14 words
A method as claimed in claim 1, wherein the crystal is grown in air.
Claim 7
Dependent Claim
24 words
A method as claimed in claim 1 wherein the solution is saturated with TiO 2 before the seed crystal is lowered into the solution.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-06-08 | 1979-12-08 | 1980-06-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-06-08 | 1983-12-08 | 1984-06-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-06-08 | 1987-12-08 | 1988-06-08 | $7700.00 | Window Closed / Lapsed |