US3960559A
Expired / Lapsed
US
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Method of making a semiconductor device utilizing a light-sensitive etching agent
Assignee: Fujifilm Holdings Corp
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Filing: 1973-10-16
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Granted: 1976-06-01
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Expires: 1993-10-16
Abstract
Abstract A light-sensitive etching agent comprising (a) a photodecomposable compound forming upon decomposition a material capable of etching a silicon compound containing film or capable of etching the film after reaction with another material, (b) a material capable of forming water upon exposure to light, (c) a binder and (d) a solvent, and a method of making a semiconductor device utilizing the light-sensitive etching agent.
Inventors
- 👤 Gyoji Suzuki
- 👤 Masayoshi Nagata
- 👤 Takeshi Tomotsu
- 👤 Hisatake Ono
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 07:24
CPC Classifications
H; H10; H10P; H10P95/00; G; G03; G03F; G03F7/00; G03F7/004; G03F7/0041; H10W; H10W74/00; H10W74/40; H10W74/43; Y; Y10; Y10S; Y10S430/00; Y10S430/1053; Y10S430/1055; Y10S430/106; Y10S430/109; Y10S430/11
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
103 words
A method of making a semiconductor device, which comprises applying to a silicon containing film provided on a semiconductor substrate a light-sensitive etching agent comprising (a) a photodecomposable compound forming upon decomposition a material capable of etching said film in presence of water, (b) a material capable of forming water upon irradiation with light, (c) a binder inert to compounds (a), (b) and (d) and (d) a solvent inert to components (a) and (b), and then image-wise exposing said light sensitive etching agent to irradiation capable of decomposing said photodecomposable compound and said material capable of forming water to thereby selectively said film.
Claim 2
Independent Claim
103 words
A method of making a semiconductor device, which comprises applying to a silicon containing film provided on a semiconductor substrate a light-sensitive etching agent comprising (a) a photodecomposable compound forming upon decomposition a material capable of etching said film in presence of water, (b) a material capable of forming water upon irradiation with light, (c) a binder inert to compounds (a), (b) and (d) and (d) a solvent inert to components (a) and (b), and then image-wise exposing said light sensitive etching agent to irradiation capable of decomposing said photodecomposable compound and said material capable of forming water to thereby selectively said film.
Claim 3
Dependent Claim
80 words
The method of making a semiconductor device of claim 1, wherein said photodecomposable compound is a compound containing an iminosulfadifluoride group, a compound containing a sulfonyl fluoride group, a fluorobenzene, a polyfluorobiphenyl, α,α,α-trifluorotoluene, a trifluoromethylnaphthol, a fluorourasil, a copolymer of tetrafluoroethylene and perfluoronitrosoalkane, a compound containing a ketone group and a fluorine atom, a compound containing a difluoroamino group, tetrafluorohydrazine, a perfluoro(alkylene-alkylamine), a halogenated fluoroalkane, a fluorinated alcohol, a fluorophosphorane, a phosphoryl fluoride and a compound containing a sulfapentafluoride group.
Claim 4
Dependent Claim
53 words
The method of making a semiconductor device of claim 1, wherein said material capable of forming water is the combination of N,N-dimethylnitrosoaniline and benzyl cyanide, the combination of an alcohol and aniline hydrobromide, nitromethane, methylnitrite, a quinine derivative, a carboxylic acid hydrate, a sulfonic acid hydrate, a nitrogen-compound hydrate or an aldehyde hydrate.
Claim 5
Dependent Claim
36 words
The method of making a semiconductor device of claim 1, wherein said solvent is an aliphatic hydrocarbon, an aromatic hydrocarbon, an alicyclic hydrocarbon, a ketone, an alcohol, a ketoalcohol, an ester, an ether, or carbon disulfide.
Claim 6
Dependent Claim
64 words
The method of making a semiconductor device of claim 1, wherein said photodecomposable compound is present in said etching agent in an amount so as to provide upon decomposition an amount of fluorine of 0.1% by weight and wherein said material capable of forming water is present in said etching agent in an amount so as to provide 0.5% by weight water upon decomposition.
Claim 7
Dependent Claim
46 words
The method of making a semiconductor device of claim 1, wherein said semiconductor substrate is silicon, germanium, gallium arsenide, gallium-arsenide-phosphide, or gallium phosphide and said silicon containing film provided on said substrate is silicon dioxide, silicon monoxide, silicon nitride, a borosilicate glass or a phosphosilicate glass.
Claim 8
Dependent Claim
24 words
The method of making a semiconductor device of claim 1, wherein said light-sensitive etching agent contains a photodecomposition accelerator and an etching reaction accelerator.
Claim 9
Dependent Claim
55 words
The method of making a semiconductor device of claim 7, wherein said photodecomposition accelerator is a halogenated benzene, a hydrocarbon containing a sulfonyl chloride group, an aldehyde or a ketone and wherein said etching reaction accelerator is a carboxylic acid, a halocarboxylic acid an organic sulfonic acid, a peroxide, a persulfate, or a mineral acid.
Claim 10
Dependent Claim
25 words
The method of making a semiconductor device of claim 1 wherein said binder has a molecular weight greater than about 800 up to about 1,000,000.
Claim 11
Dependent Claim
17 words
The method of making a semiconductor device of claim 9 wherein said binder is gelatin or casein.
Claim 12
Dependent Claim
17 words
The method of making a semiconductor device of claim 9 wherein said binder is a polyvinyl resin.
Claim 13
Dependent Claim
17 words
The method of making a semiconductor device of claim 9 wherein said binder is a polyacrylate resin.
Claim 14
Dependent Claim
17 words
The method of making a semiconductor device of claim 9 wherein said binder is a styrene copolymer.
Claim 15
Dependent Claim
17 words
The method of making a semiconductor device of claim 9 wherein said binder is a formaldehyde resin.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-06-01 | 1979-12-01 | 1980-06-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-06-01 | 1983-12-01 | 1984-06-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-06-01 | 1987-12-01 | 1988-06-01 | $7700.00 | Window Closed / Lapsed |