Planar transferred electron device with integral nonlinear load resistor

Claim 1

In a planar transferred electron logic device of the type comprising a first relatively broad planar body of material having a first conductive terminal near one end and a second conductive terminal near the opposite end and a gating terminal spaced near said first terminal, said material having a doping density and a length and thickness selected such that said body is characterized by a transfer of electrons from a high to a low mobility sub-band and the formation of domains upon the application of an electric field above threshold, means connectable to a bias source for applying an electric field across said first and second terminal with a first value slightly below that of threshold, said gating terminal being responsive to a signal above a given level causing said transferred electron effect and domains to form, the improvement therewith comprising: a non-linear loading member in series with said first body of material and in series with said means connectable to a bias source, said non-linear loading member including a second body of material like that of said first body and a dielectric medium adjacent to said second body of a relative dielectric constant sufficient to cause said second body to present a current saturation at the electric fields above said first value.