Oscillator circuit

Claim 1

An oscillator comprising: a semiconductor device having a first semiconductor region of one conductivity type forming an emitter region; a second semiconductor region of the opposite conductivity type forming a base region adjacent said first region with a first semiconductor junction therebetween; a third semiconductor region of the same conductivity type of said first region forming a collector region adjacent said second region with a second semiconductor junction therebetween; an insulating layer on the outer surface of said emitter region; a gate electrode on said insulating layer; said semiconductor device having an emitter grounded amplification characteristic which has a low point with steeply increasing segments extending substantially symmetrically therefrom at both sides thereof in response to changes in voltage between said emitter region and said gate; a bias potential source for said base region; a collector potential source connected through a load to said collector region; a first impedance element connected between said collector region and said gate; a source of negative bias potential; a second impedance element connected between said gate and said negative bias source; an output terminal connected to said collector region; said gate bias voltage being lower than that value which would cause the amplification characteristic to have a minimum value; the conductive path from said collector region to said gate through said first impedance providing positive feedback thereby establishing current oscillation at said output terminal.