US3954525A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Hot-pressed solid diffusion sources for phosphorus
Assignee: Unifrax I LLC
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Filing: 1974-12-04
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Granted: 1976-05-04
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Expires: 1994-12-04
Abstract
Abstract Solid diffusion sources for phosphorus doping comprise from 10 to 95 percent SiP2O7 with an inert phase of ZrP2O7. Such materials may be hot-pressed to obtain diffusion source wafers of the appropriate dimensions and porosity. A preferred composition comprises from 25 to 75 weight percent SiP2O7, the balance ZrP2O7. Fabrication parameters range from about 750 psi to about 6,000 psi pressure during hot-pressing, at temperatures from about 800 DEG C to about 1450 DEG C.
Inventors
- 👤 Thomas A. Myles
- 👤 Curtis E. Zimmer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:21
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/19; C; C04; C04B; C04B35/00; C04B35/01; C04B35/447; C04B35/622; C04B35/64; C04B35/645; C30; C30B; C30B31/00; C30B31/06; C30B31/16; C30B31/165; H10P32/12; H10P32/17; H10P32/171; Y; Y10; Y10S; Y10S252/00; Y10S252/95; Y10S252/951
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
51 words
A method for producing a solid phosphorus containing source body for semiconductor diffusion doping treatment comprising: a. filling a mold with a powder comprising SiP 2 O.sub. 7 and ZrP 2 O 7 , b. hot-pressing the powder in the mold, and c. cooling and removing the phosphorus containing source body.
Claim 2
Independent Claim
51 words
A method for producing a solid phosphorus containing source body for semiconductor diffusion doping treatment comprising: a. filling a mold with a powder comprising SiP 2 O.sub. 7 and ZrP 2 O 7 , b. hot-pressing the powder in the mold, and c. cooling and removing the phosphorus containing source body.
Claim 3
Dependent Claim
40 words
A method for making a solid phosphorus containing source body according to claim 1 in which the hot-pressing is done at a temperature ranging from about 800 to about 1450°C and pressures ranging from about 750 to about 6000 psi.
Claim 4
Dependent Claim
39 words
A method for making a solid phosphorus containing source body according to claim 1 in which the powder is hot-pressed at a temperature of about 1200°C under a pressure of about 2600 psi for about a 30-minute time period.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-05-04 | 1979-11-03 | 1980-05-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-05-04 | 1983-11-03 | 1984-05-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-05-04 | 1987-11-03 | 1988-05-04 | $7700.00 | Window Closed / Lapsed |