US3953941A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and apparatus for making a groove in a semi-conductor element
Assignee: BBC Brown Boveri AG Switzerland
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Filing: 1974-10-11
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Granted: 1976-05-04
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Expires: 1994-10-11
Abstract
Abstract A method and apparatus for forming a groove in a semiconductor element with at least two junctions between regions of alternating opposite conduction types and different doping concentrations and with the semiconducting region enclosed between the junctions exhibiting a higher resistivity than either of the neighboring regions, the lateral surface of the element between the surface edges of the junctions being sloped by means of a groove cut by sand blasting.
Inventors
- 👤 Otto Kuhn
- 👤 Samuel Schweitzer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 20:58
CPC Classifications
B; B24; B24C; B24C1/00; B24C1/08; B24C1/083; B24C3/00; B24C3/32; B24C3/322; H; H10; H10D; H10D62/00; H10D62/10; H10D62/102; H10D62/103; H10D62/104; H10P; H10P52/00; H10P72/00; H10P72/04; H10P72/0428
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
143 words
A method of forming a groove in a semiconductor element having at least two junctions between regions of alternating opposite conduction types and different doping concentrations, the seminconducting region enclosed between the junctions exhibiting a higher resistivity than either of the neighboring regions, the element having tapers in its lateral surface in the form of a groove symmetrically disposed between neighboring junctions where they come to the surface, the method comprising the steps of: directing an abrasive blast from a sandblast nozzle at the semiconductor element's surface to produce said groove; sensing the position of said nozzle relative to a single surface of said element which is parallel to said junctions of said element; and automatically guiding said nozzle, in response to said sensing, parallel to the semiconductor junctions while a relative motion between the semiconductor element and the sandblast nozzle is produced.
Claim 2
Independent Claim
143 words
A method of forming a groove in a semiconductor element having at least two junctions between regions of alternating opposite conduction types and different doping concentrations, the seminconducting region enclosed between the junctions exhibiting a higher resistivity than either of the neighboring regions, the element having tapers in its lateral surface in the form of a groove symmetrically disposed between neighboring junctions where they come to the surface, the method comprising the steps of: directing an abrasive blast from a sandblast nozzle at the semiconductor element's surface to produce said groove; sensing the position of said nozzle relative to a single surface of said element which is parallel to said junctions of said element; and automatically guiding said nozzle, in response to said sensing, parallel to the semiconductor junctions while a relative motion between the semiconductor element and the sandblast nozzle is produced.
Claim 3
Dependent Claim
23 words
A method as set forth in claim 1, further comprising the step of rotating said semiconductor element with respect to said sandblast nozzle.
Claim 4
Dependent Claim
172 words
Apparatus for forming a groove in a semiconductor element having at least two junctions between regions of alternating opposite conduction types and different doping concentrations, the semiconductor region enclosed between the junctions exhibiting a higher resistivity than either of the neighboring regions, the element having tapers in its lateral surface in the form of a groove symmetrically disposed between neighboring junctions where they come to the surface, the apparatus comprising: means for directing an abrasive blast from a sandblast nozzle at said semiconductor element's surface to produce said groove; and means for automatically guiding said nozzle parallel to said semiconductor junctions while a relative motion between said semiconductor element and said sandblast nozzle is produced; said means automatically guiding said nozzle including a sensing device connected to said sandblast nozzle and operatively guided over a single surface of said semiconductor element which is parallel to said junctions of said element, whereby said nozzle is automatically guided with respect to said semiconductor junctions in response to the sensing operation of said sensing device.
Claim 5
Dependent Claim
172 words
Apparatus for forming a groove in a semiconductor element having at least two junctions between regions of alternating opposite conduction types and different doping concentrations, the semiconductor region enclosed between the junctions exhibiting a higher resistivity than either of the neighboring regions, the element having tapers in its lateral surface in the form of a groove symmetrically disposed between neighboring junctions where they come to the surface, the apparatus comprising: means for directing an abrasive blast from a sandblast nozzle at said semiconductor element's surface to produce said groove; and means for automatically guiding said nozzle parallel to said semiconductor junctions while a relative motion between said semiconductor element and said sandblast nozzle is produced; said means automatically guiding said nozzle including a sensing device connected to said sandblast nozzle and operatively guided over a single surface of said semiconductor element which is parallel to said junctions of said element, whereby said nozzle is automatically guided with respect to said semiconductor junctions in response to the sensing operation of said sensing device.
Claim 6
Dependent Claim
24 words
Apparatus as set forth in claim 3, wherein said sensing device comprises an auxiliary nozzle which is supplied with a constant flow of gas.
Claim 7
Dependent Claim
17 words
Apparatus as in claim 3, wherein said sensing device is in the form of a mechanical feeler.
Claim 8
Dependent Claim
28 words
Apparatus as set forth in claim 3, wherein said semiconductor element is rotatable about its symmetry axis, on a substrate holder with respect to said non-rotating sandblast nozzle.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-05-04 | 1979-11-03 | 1980-05-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-05-04 | 1983-11-03 | 1984-05-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-05-04 | 1987-11-03 | 1988-05-04 | $7700.00 | Window Closed / Lapsed |