US3262234A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming a semiconductor rim by sandblasting
Assignee: Infineon Technologies Americas Corp
•
Filing: 1963-10-04
•
Granted: 1966-07-26
•
Expires: 1983-10-04
Abstract
No abstract record available.
Inventors
- 👤 Thomas J Roach
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 16:50
CPC Classifications
H; H10; H10P; H10P52/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
68 words
THE METHOD OF TAPERING AN EDGE OF A SEMICONDUCTOR WAFER HAVING AN EDGE AND A JUNCTION PLANE THEREIN; SAID METHOD COMPRISING THE STEPS OF APPLYING A FIRST AND SECOND HIGH SPEED JET OF ABRASIVE MATERIAL TOWARD THE EDGE OF SAID WAFER AND AT ANGLE THERETO; SAID FIRST AND SECOND JETS OF ABRASIVE MATERIAL FORMING ANGLES OF APPROXIMATELY 10* AND 30* RESPECTIVELY TO THE JUNCTION PLANE OF SAID WAFER.
Claim 2
Independent Claim
68 words
THE METHOD OF TAPERING AN EDGE OF A SEMICONDUCTOR WAFER HAVING AN EDGE AND A JUNCTION PLANE THEREIN; SAID METHOD COMPRISING THE STEPS OF APPLYING A FIRST AND SECOND HIGH SPEED JET OF ABRASIVE MATERIAL TOWARD THE EDGE OF SAID WAFER AND AT ANGLE THERETO; SAID FIRST AND SECOND JETS OF ABRASIVE MATERIAL FORMING ANGLES OF APPROXIMATELY 10* AND 30* RESPECTIVELY TO THE JUNCTION PLANE OF SAID WAFER.
References Cited (Backward Citations)
US708880A
Cited
US2092083A
Cited
US2394056A
Cited
US2516222A
Cited
US2858653A
Cited
US3100276A
Cited
US3179860A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-07-25 | 1970-01-24 | 1970-07-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-07-25 | 1974-01-24 | 1974-07-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-07-25 | 1978-01-24 | 1978-07-26 | $7700.00 | Window Closed / Lapsed |