Non-linear voltage titanium oxide resistance element

Claim 2

A non-linear voltage resistant element comprising a sintered body of a powdered metal oxide mixture, said mixture consisting essentially of 0.05 to 10 molar % of bismuth trioxide, 0.05 to 3 molar % of niobium pentaoxide, and the remainder being titanium oxide, said body being sintered at a sintering temperature no higher than the melting point of titanium oxide and no lower than a temperature at which a melt of metal oxides is produced in an oxidizing or non-oxidizing atmosphere.

Claim 3

A non-linear voltage resistance element according to claim 1, wherein the body is sintered in a non-oxidizing atmosphere and the stoichiometric bonding ratio of oxygen atoms to titanium atoms in titanium oxide contained in the sintered body is less than 2.

Claim 4

A non-linear voltage resistance element according to claim 1, wherein the sintering temperature is from 1000° to 1400°C.

Claim 5

A non-linear voltage resistance element according to claim 1, wherein the sintering temperature is from 1200° to 1400°C.

Claim 6

A non-linear voltage resistance element according to claim 1, wherein the body is sintered in an oxidizing atmosphere and titanium oxide contained in the sintered body is titanium dioxide.

Claim 7

A non-linear voltage resistance element according to claim 1, wherein said mixture contains 1 to 3 molar % of bismuth trioxide and 0.1 to 3 molar % of niobium pentaoxide.

Claim 8

A non-linear voltage resistance element according to claim 1, wherein the mixture contains from 1 to 3 molar % of bismuth trioxide and from 1 to 3 molar % of niobium pentaoxide.

Claim 9

A non-linear voltage resistance element according to claim 1, wherein the mixture contains from 0.1 to 10 molar % of bismuth trioxide and from 0.1 to 3 molar % of niobium pentaoxide.

Claim 10

A non-linear voltage resistance element according to claim 1, wherein the titanium oxide niobium pentaoxide, and bismuth trioxide powders contained within said metal oxide mixture have a particle size that is from 50 to 325 mesh.

Claim 11

A non-linear voltage resistance element according to claim 1, wherein said body is sintered for a period of from 1 to 4 hours.

Claim 12

A non-linear voltage resistance element according to claim 1, wherein said sintered body contains particles of the titanium oxide surrounded by a layer of a melt of niobium pentaoxide and bismuth trioxide.

Claim 13

A non-linear voltage resistance element according to claim 1, wherein said element exhibits a non-linear coefficient α of from 1 to 16.

Claim 14

A titanium oxide base non-linear voltage resistance element comprising a formed and sintered body of metallic oxide powder, said metallic oxide powder consisting of bismuth trioxide powder of 0.05 to 10 molar %, niobium pentaoxide powder of 0.05 to 3 molar %, and titanium oxide powder in quantity of the remainder of said metallic oxide powder, and said body being sintered at 1000° to 1400°C. in a non-oxidizing atmosphere wherein the stoichiometric bonding ratio of oxygen atoms to titanium atoms in titanium oxide contained in the sintered body is less than 2.

Claim 15

A titanium oxide base non-linear voltage resistance element comprising a formed and sintered body of metallic oxide powder, said metallic oxide powder consisting of bismuth trioxide powder of 0.05 to 10 molar %, niobium pentaoxide powder of 0.05 to 3 molar %, and titanium oxide powder in quantity of the remainder of said metallic oxide powder, and said body being sintered at 1000° to 1400°C. in a non-oxidizing atmosphere wherein the stoichiometric bonding ratio of oxygen atoms to titanium atoms in titanium oxide contained in the sintered body is less than 2.

Claim 16

A titanium oxide base non-linear voltage resistance element comprising a formed and sintered body of metallic oxide powder, said metallic oxide powder consisting of bismuth trioxide powder of 1 to 3 molar %, niobium pentaoxide powder of 0.1 to 3 molar %, and titanium oxide powder in quantity of the remainder of said metallic oxide powder, and said body being sintered at 1000° to 1400°C. in a non-oxidizing atmosphere wherein the stoichiometric bonding ratio of oxygen atoms to titanium atoms in titanium oxide contained in the sintered body is less than 2.

Claim 17

A titanium oxide base non-linear voltage resistance element comprising a formed and sintered body of metallic oxide powder, said metallic oxide powder consisting of bismuth trioxide powder of 1 to 3 molar %, niobium pentaoxide powder of 0.1 to 3 molar %, and titanium oxide powder in quantity of the remainder of said metallic oxide powder, and said body being sintered at 1000° to 1400°C. in a non-oxidizing atmosphere wherein the stoichiometric bonding ratio of oxygen atoms to titanium atoms in titanium oxide contained in the sintered body is less than 2.

Claim 18

A titanium oxide base non-linear voltage resistance element comprising a formed and sintered body of metallic oxide powder, said metallic oxide powder consisting of bismuth trioxide powder of 1 to 3 molar %, niobium pentaoxide powder of 1 to 3 molar %, and titanium oxide powder in quantity of the remainder of said metallic oxide powder, and said body being sintered at 1000° to 1400°C. in a non-oxidizing atmosphere wherein the stoichiometric bonding ratio of oxygen atoms to titanium atoms in titanium oxide contained in the sintered body is less than 2.

Claim 19

A titanium oxide base non-linear voltage resistance element comprising a formed and sintered body of metallic oxide powder, said metallic oxide powder consisting of bismuth trioxide powder of 1 to 3 molar %, niobium pentaoxide powder of 1 to 3 molar %, and titanium oxide powder in quantity of the remainder of said metallic oxide powder, and said body being sintered at 1000° to 1400°C. in a non-oxidizing atmosphere wherein the stoichiometric bonding ratio of oxygen atoms to titanium atoms in titanium oxide contained in the sintered body is less than 2.