US3953243A
Expired / Lapsed
US
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Method for setting the lifetime of charge carriers in semiconductor bodies
Assignee: Licentia Patent Verwaltungs GmbH
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Filing: 1974-08-12
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Granted: 1976-04-27
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Expires: 1994-08-12
Abstract
Abstract A method of setting the lifetime of charge carriers in a semiconductor body by the formation of recombination centers in the semiconductor body. The quantity of the recombination centers forming material necessary to provide the desired concentration in the semiconductor body is applied to the surface of the semiconductor body and into the surface thereof by ion implantation, and thereafter, in order to diffuse the material into the semiconductor body, the body is heated until an approximately stationary value for the charge carrier lifetime has developed in the entire volume of the body.
Inventors
- 👤 Adolf Goetzberger
- 👤 Max Schulz
- 👤 Alois Sonntag
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 09:49
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10P30/208; H10P32/00; H10P32/10; H10P32/14; H10P32/1404; H10P32/1406; H10P32/17; H10P32/171; H10P32/18; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/023; Y10S438/00; Y10S438/914; Y10S438/917
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
104 words
Method for setting the lifetime of charge carriers in semiconductor bodies for semiconductor devices by the diffusion of recombination centers, comprising: applying the recombination center forming material to the surface and into the surface layer of the semiconductor body in a quantity which corresponds to the desired final concentration of said material in the semiconductor body by means of ion implantation; and heating the semiconductor body to a temperature sufficient to cause diffusion of the implanted ions into the remainder of the semiconductor body until an approximately stationary value for the charge carrier lifetime has developed in the entire volume of the semiconductor body.
Claim 2
Dependent Claim
104 words
Method for setting the lifetime of charge carriers in semiconductor bodies for semiconductor devices by the diffusion of recombination centers, comprising: applying the recombination center forming material to the surface and into the surface layer of the semiconductor body in a quantity which corresponds to the desired final concentration of said material in the semiconductor body by means of ion implantation; and heating the semiconductor body to a temperature sufficient to cause diffusion of the implanted ions into the remainder of the semiconductor body until an approximately stationary value for the charge carrier lifetime has developed in the entire volume of the semiconductor body.
Claim 3
Dependent Claim
21 words
The method defined in claim 1 wherein the implantation energy is selected so that the penetration depth is at least 50A.
Claim 4
Dependent Claim
16 words
The method defined in claim 2 wherein gold is implanted as the recombination center forming material.
Claim 5
Dependent Claim
16 words
The method defined in claim 2 wherein platinum is implanted as the recombination center forming material.
Claim 6
Dependent Claim
14 words
The method defined in claim 3 wherein the semiconductor body is formed of silicon.
Claim 7
Dependent Claim
14 words
The method defined in claim 4 wherein the semiconductor body is formed of silicon.
Claim 8
Dependent Claim
24 words
The method defined in claim 1 wherein said step of diffusing further includes heating the semiconductor body in a protective gas atmosphere of hydrogen.
Claim 9
Dependent Claim
21 words
The method defined in claim 7 wherein said step of heating is carried out at a temperature of more than 700°C.
Claim 10
Dependent Claim
14 words
The method defined in claim 8 wherein said temperature is between 800° and 1000°C.
Claim 11
Dependent Claim
32 words
The method defined in claim 1 wherein said quantity of recombination center forming material is in the order of magnitude of about 10 10 to 10 13 atoms .sup.. cm.sup. -2 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-04-27 | 1979-10-27 | 1980-04-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-04-27 | 1983-10-27 | 1984-04-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-04-27 | 1987-10-27 | 1988-04-27 | $7700.00 | Window Closed / Lapsed |