US3640783A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor devices with diffused platinum
Assignee: Optron Inc
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Filing: 1969-08-11
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Granted: 1972-02-08
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Expires: 1989-08-11
Abstract
Abstract A semiconductor device having platinum dispersed throughout said device. The dispersion of platinum within a semiconductor device results in improved electrical characteristics of the device. In a silicon diode, the improved characteristics include the reduction of reverse recovery time and an increase in the breakdown voltage. In a silicon transistor, the improved characteristics include the achievement of high switching speeds while maintaining high forward current gain.
Inventors
- 👤 Robert F Bailey
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 09:55
CPC Classifications
H; H10; H10P; H10P95/00; H10D; H10D99/00; H10P32/00; H10P32/10; H10P32/17; H10P32/171; H10P32/18; Y; Y10; Y10S; Y10S148/00; Y10S148/062
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
59 words
A method for the fabrication of a silicon diode comprising the steps of: a. providing a silicon crystal body having a PN-junction being disposed therein; and b. heating said silicon crystal body in the presence of platinum to a temperature in the range of 925*-965* C. for a time sufficient to diffuse platinum atoms substantially throughout said silicon crystal.
Claim 2
Independent Claim
98 words
A method for the fabrication of a transistor comprising the steps of: a. providing a silicon crystal body with a first region of a first-conductivity type being disposed between and contiguous to a pair of second regions of a second conductivity type; and b. diffusing platinum throughout said body by heating said body in the presence of platinum to a temperature in the range of 925*-965* C. for a time sufficient to substantially disperse platinum atoms through said silicon crystal body whereby a transistor is produced having a substantially improved forward current transfer ratio and reduced switching speed.
Claim 3
Dependent Claim
18 words
A method as in claim 3, wherein a silicon crystal body with an NPN-transistor disposed therein is provided.
References Cited (Backward Citations)
US3067485A
Cited
US3486950A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-02-07 | 1975-08-09 | 1976-02-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-02-07 | 1979-08-09 | 1980-02-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-02-07 | 1983-08-09 | 1984-02-08 | $7700.00 | Window Closed / Lapsed |