US3949245A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and system for sensing charges at distributed points on a charge coupled device
Assignee: Texas Instruments Inc
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Filing: 1974-10-24
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Granted: 1976-04-06
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Expires: 1994-10-24
Abstract
Abstract The specification discloses a technique for non-destructively sampling the charge stored adjacent distributed phase electrodes in a charge coupled device. A storage capacitor is provided with a capacitance in the range of the combined capacitance of the phase electrodes. A first switch is operable during a first clock period for connecting the capacitor to a source of reference voltage. A second switch is operable during the first clock period for connecting the phase electrodes to be sampled to circuit ground. An insulated gate field effect transistor is connected with its source and drain between the phase electrodes and the second switch. The gate of the transistor is biased at a voltage level less than the reference voltage. The first and second switches are then operable during a second clock period for coupling the charged capacitor through the field effect transistor to apply clock voltage to the phase electrodes, wherein the capacitor discharges by an amount proportional to the charge stored adjacent the phase electrodes. An output circuit is connected to the capacitor for detecting the amount of discharge of the capacitor to indirectly sample the charge.
Inventors
- 👤 Stephen Perry Emmons
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 21:31
CPC Classifications
H; H10; H10D; H10D44/00; H10D44/40; H10D44/45; H10D44/454; G; G11; G11C; G11C19/00; G11C19/28; G11C19/282; G11C19/285; G11C27/00; G11C27/02; G11C27/024
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
198 words
A circuit for sensing charge stored adjacent phase electrodes in a charge transfer device comprising: a storage capacitor having a capacitance not greater than the combined capacitances of said phase electrodes; means for selectively applying a reference voltage to said storage capacitor during a first clock period thereby to charge said capacitor to said reference voltage level; an impedance transformation insulated gate field effect transistor having a channel connected to said phase electrodes to suppress voltage fluctuations, said transistor having a gate bias voltage substantially less than said reference voltage level; means for connecting the channel of said field effect transistor to a predetermined voltage level during a first clock period to cause conduction of said transistor in a non-saturated mode, thereby discharging said phase electrodes to said predetermined voltage level; means for connecting said charged capacitor to the channel of said transistor during a second clock period thereby applying a clock voltage level to said phase electrodes determined by said gate bias voltage, wherein said capacitor discharges during said second clock period by an amount determined by the charge stored adjacent said phase electrodes; and output circuit means for detecting the amount of discharge of said capacitor.
Claim 2
Dependent Claim
198 words
A circuit for sensing charge stored adjacent phase electrodes in a charge transfer device comprising: a storage capacitor having a capacitance not greater than the combined capacitances of said phase electrodes; means for selectively applying a reference voltage to said storage capacitor during a first clock period thereby to charge said capacitor to said reference voltage level; an impedance transformation insulated gate field effect transistor having a channel connected to said phase electrodes to suppress voltage fluctuations, said transistor having a gate bias voltage substantially less than said reference voltage level; means for connecting the channel of said field effect transistor to a predetermined voltage level during a first clock period to cause conduction of said transistor in a non-saturated mode, thereby discharging said phase electrodes to said predetermined voltage level; means for connecting said charged capacitor to the channel of said transistor during a second clock period thereby applying a clock voltage level to said phase electrodes determined by said gate bias voltage, wherein said capacitor discharges during said second clock period by an amount determined by the charge stored adjacent said phase electrodes; and output circuit means for detecting the amount of discharge of said capacitor.
Claim 3
Dependent Claim
41 words
The circuit of claim 1, wherein said means for connecting said channel of said transistor to said predetermined voltage level during said first clock period comprises an insulated gate field effect transistor and wherein said predetermined voltage level is circuit ground.
Claim 4
Dependent Claim
18 words
The circuit of claim 1 wherein said means for selectively applying comprises an insulated gate field effect transistor.
Claim 5
Dependent Claim
48 words
The circuit of claim 1 wherein said output means comprises a source follower circuit including an insulated gate field effect transistor connected at its gate to said capacitor, connected at its drain to a bias supply and connected at its source to circuit ground through a load resistance.
Claim 6
Dependent Claim
178 words
A circuit for sensing the charge stored adjacent phase electrodes in a charge coupled device comprising: a storage capacitor having a capacitance not greater than the combined capacitances of said phase electrodes; first insulated gate field effect transistor means operable during a first clock period for connecting said capacitor to a source of reference voltage; second insulated gate field effect transistor means having one end of its channel connected to said phase electrodes, the gate of said second transistor means being biased at a voltage level substantially less than said reference voltage; further insulated gate field effect transistor switching means operable during a second clock period for coupling said charged capacitor through the channel of said second field effect transistor means to apply a clock voltage to said phase electrodes, said clock voltage being determined by said gate bias voltage level of said second transistor, wherein said capacitor discharges by an amount determined by the charge stored adjacent said phase electrodes; and insulated gate field effect transistor amplifier means for detecting the amount of discharge of said capacitor.
Claim 7
Dependent Claim
178 words
A circuit for sensing the charge stored adjacent phase electrodes in a charge coupled device comprising: a storage capacitor having a capacitance not greater than the combined capacitances of said phase electrodes; first insulated gate field effect transistor means operable during a first clock period for connecting said capacitor to a source of reference voltage; second insulated gate field effect transistor means having one end of its channel connected to said phase electrodes, the gate of said second transistor means being biased at a voltage level substantially less than said reference voltage; further insulated gate field effect transistor switching means operable during a second clock period for coupling said charged capacitor through the channel of said second field effect transistor means to apply a clock voltage to said phase electrodes, said clock voltage being determined by said gate bias voltage level of said second transistor, wherein said capacitor discharges by an amount determined by the charge stored adjacent said phase electrodes; and insulated gate field effect transistor amplifier means for detecting the amount of discharge of said capacitor.
Claim 8
Dependent Claim
202 words
A circuit for sensing charge stored adjacent phase electrodes in a charge transfer device comprising: a storage capacitor having a capacitance not greater than the combined capacitances of said phase electrodes; means for selectively applying a reference voltage to said storage capacitor during a first clock period thereby to charge said capacitor to said reference voltage level; a plurality of impedance transformation insulated gate field effect transistors having channels connected respectively to said phase electrodes to suppress voltage fluctuations, said transistors having a common gate bias voltage substantially less than said reference voltage level; means for connecting the channels of said field effect transistors to a common predetermined voltage level during a first clock period to cause conduction of said transistors in a non-saturated mode, thereby discharging said phase electrodes to said predetermined voltage level; means for connecting said charged capacitor to the channels of said transistors during a second clock period thereby applying a clock voltage level to said phase electrodes determined by said gate bias voltage, wherein said capacitor discharges during said second clock period by an amount determined by the charge stored adjacent said phase electrodes; and output circuit means for detecting the amount of discharge of said capacitor.
Claim 9
Dependent Claim
202 words
A circuit for sensing charge stored adjacent phase electrodes in a charge transfer device comprising: a storage capacitor having a capacitance not greater than the combined capacitances of said phase electrodes; means for selectively applying a reference voltage to said storage capacitor during a first clock period thereby to charge said capacitor to said reference voltage level; a plurality of impedance transformation insulated gate field effect transistors having channels connected respectively to said phase electrodes to suppress voltage fluctuations, said transistors having a common gate bias voltage substantially less than said reference voltage level; means for connecting the channels of said field effect transistors to a common predetermined voltage level during a first clock period to cause conduction of said transistors in a non-saturated mode, thereby discharging said phase electrodes to said predetermined voltage level; means for connecting said charged capacitor to the channels of said transistors during a second clock period thereby applying a clock voltage level to said phase electrodes determined by said gate bias voltage, wherein said capacitor discharges during said second clock period by an amount determined by the charge stored adjacent said phase electrodes; and output circuit means for detecting the amount of discharge of said capacitor.
Claim 10
Independent Claim
128 words
The method of sensing the charge stored adjacent phase electrodes in a charge coupled device comprising: storing a predetermined reference voltage on a capacitor during a first clock period, said capacitor having a capacitance not greater than the combined capacitances of said phase electrodes; discharging said phase electrodes to circuit ground during said first clock period; applying a bias voltage substantially less than said reference voltage to the gate of an insulated gate field effect transistor; connecting the charged capacitor through the channel of said transistor to apply a clock voltage to said phase electrodes equal to said bias voltage less the threshold voltage of said transistor; and detecting the amount of discharge of said capacitor to provide an indication of the charge stored adjacent said phase electrodes.
Claim 11
Independent Claim
128 words
The method of sensing the charge stored adjacent phase electrodes in a charge coupled device comprising: storing a predetermined reference voltage on a capacitor during a first clock period, said capacitor having a capacitance not greater than the combined capacitances of said phase electrodes; discharging said phase electrodes to circuit ground during said first clock period; applying a bias voltage substantially less than said reference voltage to the gate of an insulated gate field effect transistor; connecting the charged capacitor through the channel of said transistor to apply a clock voltage to said phase electrodes equal to said bias voltage less the threshold voltage of said transistor; and detecting the amount of discharge of said capacitor to provide an indication of the charge stored adjacent said phase electrodes.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-04-06 | 1979-10-06 | 1980-04-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-04-06 | 1983-10-06 | 1984-04-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-04-06 | 1987-10-06 | 1988-04-06 | $7700.00 | Window Closed / Lapsed |