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US3946418A
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Resistive gate field effect transistor
Assignee: General Electric Co
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Filing: 1972-11-01
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Granted: 1976-03-23
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Expires: 1992-11-01
Abstract
Abstract A resistive gate field effect transistor (FET) is disclosed in which the gate comprises a resistive film overlying an insulating layer and in contact with both the source and drain electrodes. This provides an integrated circuit, bidirectional voltage limiter in which the limiting voltage can be tailored to almost any value likely to be found on an integrated circuit. In another form of the present invention, a conductive gate is added between the resistive gate and the substrate.
Inventors
- 👤 Raymond A. Sigsbee
- 👤 William D. Barber
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 20:53
CPC Classifications
H; H10; H10D; H10D89/00; H10D89/211; H10D89/213; H10D30/00; H10D30/60; H10D64/00; H10D64/60; H10D64/605; Y; Y10; Y10S; Y10S148/00; Y10S148/053; Y10S148/122; Y10S148/136
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
57 words
A constant voltage load comprising: a semiconductor substrate of a first conductivity type; first and second regions of an opposite conductivity type formed in said substrate; insulating means overlying the area on said substrate between said first and second regions; resistive gate means overlying said insulating means and in electrical contact with said first and second regions.
Claim 2
Dependent Claim
57 words
A constant voltage load comprising: a semiconductor substrate of a first conductivity type; first and second regions of an opposite conductivity type formed in said substrate; insulating means overlying the area on said substrate between said first and second regions; resistive gate means overlying said insulating means and in electrical contact with said first and second regions.
Claim 3
Dependent Claim
35 words
A constant voltage load as set forth in claim 1 wherein said resistive gate means comprises a layer of material selected from the group consisting of polycrystalline silicon and glasses consisting substantially of vanadium pentoxide.
Claim 4
Dependent Claim
17 words
A constant voltage load as set forth in claim 2 wherein said resistive layer comprises polycrystalline silicon.
Claim 5
Dependent Claim
21 words
A constant voltage load as set forth in claim 3 wherein said polycrystalline silicon has a doped, higher conductivity central portion.
Claim 6
Dependent Claim
61 words
A constant voltage load as set forth in claim 1 wherein said resistive gate means comprises: a conductive layer overlying a portion of said insulating means; a first resistive layer segment electrically connecting one end of said conductive layer to said first region; and a second resistive layer segment electrically connecting another end of said conductive layer to said second region.
Claim 7
Dependent Claim
30 words
A constant voltage load as set forth in claim 5 wherein said resistive gate means comprises a continuous layer of resistive material having a doped portion forming said conductive layer.
Claim 8
Dependent Claim
17 words
A constant voltage load as set forth in claim 6 wherein said resistive material comprises polycrystalline silicon.
Claim 9
Dependent Claim
56 words
A constant voltage load as set forth in claim 1 and further comprising: a conductive layer overlying said insulating means; and an insulating layer overlying and surrounding said conductive layer, said insulating layer having an aperture exposing a portion of said conductive layer; and wherein said resistive means electrically contacts said conductive layer through said aperture.
Claim 10
Dependent Claim
22 words
A constant voltage load as set forth in claim 8 wherein said aperture is approximately centrally located with respect to said region.
Claim 11
Dependent Claim
30 words
A constant voltage load as set forth in claim 9 wherein said resistive means has an approximately uniform resistivity from one of said regions to the other of said regions.
Claim 12
Dependent Claim
29 words
A constant voltage means as set forth in claim 9 wherein said resistive means has a non-uniform resistivity from one of said regions to the other of said regions.
Claim 13
Dependent Claim
24 words
A constant voltage load as set forth in claim 8 wherein said aperture is asymmetrically located with respect to said first and second regions.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-03-23 | 1979-09-22 | 1980-03-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-03-23 | 1983-09-22 | 1984-03-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-03-23 | 1987-09-22 | 1988-03-23 | $7700.00 | Window Closed / Lapsed |