Method of making integrated circuits

Claim 1

Method of making an integrated circuit comprising the steps of: forming impurity diffused regions on the principal face of a semiconductor substrate, coating the principal face of said substrate with an insulating layer, coating said insulating layer with a photoresist layer of a specified pattern having openings on specified positions thereon, etching said insulating layer through said openings by utilizing said photoresist layer as an etching mask to form openings in said insulating layer from which specified regions of said principal face of the substrate are exposed, vapor depositing a metal layer of the thickness substantially equal to the thickness of the insulating layer over the entire principal face of said substrate, to fill said openings in the insulating layer through said insulating layer and said photoresist layer, applying a photoresist removing liquid to remove said photoresist layer and the part of said metal layer that is remaining on said photoresist layer while leaving only said metal layer in said openings at a level flush with the upper surface of said insulating layer, and forming on said insulating layer metal strips having widths substantially corresponding to said openings and overlying said openings to thereby contact said metal layer formed in said openings and embed the metal layer in the openings between said specified regions of the substrate and said metal strips.