Method for manufacturing a connecting circuit for an integrated miniaturised wiring system

Claim 1

A method for manufacturing a connecting circuit for an integrated miniaturised wiring system said circuit including conductors having one of their ends opened into a cavity in which said system is to incorporated, said method comprising depositing said conductors upon a first metal which is etchable by certain chemical agents, said conductors resisting said agents the etching of a part of said first metal and the replacing of said first metal which has been removed, by an insulating material in which said ends of said conductors are embedded said method further comprising the following stages: a. first covering of the whole external surface of the device thus obtained with a thin layer of said first metal; b. localising and depositing on said thin layer of a photosensitive resin mask, determined by the dimension of said cavity; c. second covering of the whole of the device with the exception of the zone protected by said mask, with a thick layer of said first metal; d. removal of said mask laying bare of said thin layer; e. rapid etching by said chemical agents, of said thin layer and baring said insulating material at this location; f. hollowing out of said insulating material thus bared, forming said cavity in which at least one end of said conductors is opened into; g. chemical etching by means of one of said chemical agents of the whole of said thick layer and of said first metal.

Claim 2

A method for manufacturing a connecting circuit for an integrated miniaturised wiring system said circuit including conductors having one of their ends opened into a cavity in which said system is to incorporated, said method comprising depositing said conductors upon a first metal which is etchable by certain chemical agents, said conductors resisting said agents the etching of a part of said first metal and the replacing of said first metal which has been removed, by an insulating material in which said ends of said conductors are embedded said method further comprising the following stages: a. first covering of the whole external surface of the device thus obtained with a thin layer of said first metal; b. localising and depositing on said thin layer of a photosensitive resin mask, determined by the dimension of said cavity; c. second covering of the whole of the device with the exception of the zone protected by said mask, with a thick layer of said first metal; d. removal of said mask laying bare of said thin layer; e. rapid etching by said chemical agents, of said thin layer and baring said insulating material at this location; f. hollowing out of said insulating material thus bared, forming said cavity in which at least one end of said conductors is opened into; g. chemical etching by means of one of said chemical agents of the whole of said thick layer and of said first metal.