US3945111A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Metallization system for semiconductor devices, devices utilizing such metallization system and method for making devices and metallization system
Assignee: Motorola Solutions Inc
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Filing: 1974-10-16
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Granted: 1976-03-23
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Expires: 1994-10-16
Abstract
Abstract A metallization system for metallurgically bonding a semiconductor die to metallic conducting slugs as terminals at the same time, and at the same temperature, that a surrounding glass sleeve is hermetically sealed to the conducting slugs for forming a zener diode, for example, is disclosed. The metallization system comprises a combination of aluminum, tin and palladium, for bonding to molybdenum, the aluminum being vapor deposited followed by a vapor co-deposition of aluminum and tin and further followed by a vapor deposited layer of palladium.
Inventors
- 👤 Richard L. Greeson
- 👤 Elliott M. Philofsky
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 02:34
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/30; B; B23; B23K; B23K35/00; B23K35/001; H10W20/00; H10W20/40; H10W70/00; H10W70/20; H10W70/24; H10W76/00; H10W76/10; H10W76/12; H10W76/13; H10W76/138; B23K2035/008; H10W72/071; H10W72/073; H10W72/07331; H10W72/07336; H10W72/351; H10W72/352; H10W72/50; H10W72/59; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49169; Y10T29/49171
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
167 words
The method of making a semiconductor device including a semiconductor chip, at least one terminal metallurigically bonded to said chip and a glass sleeve sealed to said terminal comprising the steps of: forming a semiconductor chip having a metallization system thereon comprising a layer of aluminum, a layer of aluminum and tin mixture on said aluminum layer; providing at least one terminal consisting of one metal selected from the group of molybdenum, copper, nickel, silver, platinum, palladium, rhodium, tungsten, a copper clad steel and an alloy of nickel and cobalt in iron; disposing said terminal adjacent said semiconductor chip; providing a glass sleeve surrounding said terminal; subjecting the assembly of said chip, said terminal and said glass sleeve to a time-temperature cycle comprising an increase in temperature to about 725°-825°C in about 6-10 minutes followed by a decrease in temperature to slightly below the aluminum-silicon eutectic in a period of about 10-30 seconds, and followed by a decrease in temperature to room temperature in about 5-7 minutes.
Claim 2
Independent Claim
167 words
The method of making a semiconductor device including a semiconductor chip, at least one terminal metallurigically bonded to said chip and a glass sleeve sealed to said terminal comprising the steps of: forming a semiconductor chip having a metallization system thereon comprising a layer of aluminum, a layer of aluminum and tin mixture on said aluminum layer; providing at least one terminal consisting of one metal selected from the group of molybdenum, copper, nickel, silver, platinum, palladium, rhodium, tungsten, a copper clad steel and an alloy of nickel and cobalt in iron; disposing said terminal adjacent said semiconductor chip; providing a glass sleeve surrounding said terminal; subjecting the assembly of said chip, said terminal and said glass sleeve to a time-temperature cycle comprising an increase in temperature to about 725°-825°C in about 6-10 minutes followed by a decrease in temperature to slightly below the aluminum-silicon eutectic in a period of about 10-30 seconds, and followed by a decrease in temperature to room temperature in about 5-7 minutes.
Claim 3
Dependent Claim
24 words
The method according to claim 1 wherein the decrease in temperature to slightly below the aluminumsilicon eutectic is to a temperature of about 500°-550°C.
Claim 4
Dependent Claim
55 words
The method according to claim 1 wherein said increase in temperature to about 725°-825°C comprises an increase from ambient to slightly below the aluminum-silicon eutectic in about 5-7 minutes, a hold thereat of about 1-2 minutes, an increase in temperature to about 725°-825°C in about 20-60 seconds, and a hold therat for about 10-60 seconds.
Claim 5
Dependent Claim
25 words
The method according to claim 1 wherein the decrease in temperature to slightly below the aluminumsilicon eutectic occurs in a period of about 10-30 seconds.
Claim 6
Dependent Claim
20 words
The method according to claim 1 wherein the step of providing at least one terminal comprises selecting the metal molybdenum.
References Cited (Backward Citations)
US3261075A
Cited
US3271124A
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US3447236A
Cited
US3621563A
Cited
US3657611A
Cited
US3844029A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-03-23 | 1979-09-22 | 1980-03-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-03-23 | 1983-09-22 | 1984-03-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-03-23 | 1987-09-22 | 1988-03-23 | $7700.00 | Window Closed / Lapsed |