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US3844029A Expired / Lapsed US ⏱️ 0.0 years remaining

High power double-slug diode package

Assignee: Optron Inc
•
Filing: 1973-08-15
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Granted: 1974-10-29
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Expires: 1993-08-15
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Abstract

Abstract This invention is an improved, high power double-slug diode package, and a novel method for making the same. A preferred embodiment of the present invention is comprised of a pair of solid cylindrical molybdenum slugs having metallically coated end faces; a semiconductor die sandwiched between adjacent end faces of the pair of slugs, the surfaces of the die contacting the end faces of the slugs being metallically coated; a glass envelope entirely encapsulating the semiconductor die and the adjacent halves of the slugs; and a conductive lead brazed to the outer end face of each of the slugs. A novel feature of the present invention lies in the chemical bond achieved between the glass and the surface of the slugs. In the preferred embodiment described hereinbelow, each of the molybdenum slugs has a layer of molybdenum oxide disposed over that portion of its circumferential surface which is not metallically coated. The glass and molybdenum oxide form a chemical bond which provides a superior seal and greater strength than heretofore attainable. The seal renders the invented package substantially impervious to moisture, water, gas and other contaminants. The strength provided by the glass to molybdenum oxide chemical bond is sufficient to preclude having to braze the die to the slug faces in order to achieve satisfactory assembly strength as has been the practice of the prior art. A preferred method for making the invented package comprises the steps of metallically coating the cylindrical slugs of molybdenum; masking and etching the slugs so as to leave the metallic coating only on the end faces and adjacent circumferential edges thereof; oxidizing the uncoated molybdenum surfaces of the slugs; loosely assembling the semiconductor die, the slugs and a glass sleeve in a jig, the slugs and die being disposed within the glass sleeve, heating the assembly in an evacuated chamber to the point where the glass becomes molten; injecting nitrogen gas into the chamber causing the glass sleeve to collapse around the slugs and die; and brazing leads to the outer end faces of the slugs. A novel feature of the invented method is the above-described sealing step where, in a single step, the slugs and die are forced together, sealed and held in their contacting space relation by the chemical bond formed between the molten glass and the molybdenum oxide. An additional novel feature of the invented method lies in the fact that the sealing step can be carried out at relatively low temperatures; i.e., temperatures significantly below those required to braze the die to the slugs as disclosed by the prior art.

Inventors

  • 👤 R Dibugnara

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-28 17:38
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/111; H10W72/00; H10W72/20; H10W76/00; H10W76/10; H10W76/12; H10W76/13; H10W76/138; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49169; Y10T29/49171

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 152 words
THE METHOD OF MAKING A GLASS ENCAPSULATED SEMICONDUCTOR DEVICE COMPRISING (I) A SEMICONDUCTOR DIE HAVING FIRST AND SECOND FACES, A CIRCUMFERENTIAL EDGE AND AT LEAST ONE PN JUNCTION BETWEEN SAID FACES; (II) FIRST AND SECOND ELECTTRICALLY CONDUCTING METAL SLUGS, EACH OF SAID SLUGS HAVING AT LEAST ONE LAYER OF AN ELECTRICALLY CONDUCTING METAL COATED OVER FIRST AND SECOND ENDS THEREOF, AND A LAYER OF AN OXIDE OF SAID METAL COATED OVER A CIRCUMFERENTIAL SURFACE THEREOF, WHICH METHOD COMPRISES THE STEPS OF: A. HOLDING TOGETHER AN ASSEMBLY COMPRISED OF SAID DIE, SAID SLUGS AND A GLASS SLEEVE, SAID DIE AND SAID SLUGS BEING DISPOSED WITHIN SAID GLASS SLEEVE, SAID FIRST AND SECOND FACES OF SAID DIE BEING IN CONTACTING RELATION WITH SAID FIRST ENDS OF SAID FIRST AND SECOND SLUGS RESPECTIVELY; B. HEATING THE ASSEMBLY OF STEP (A) IN A PARTIALLY EVACUATED CHAMBER UNTIL SAID GLASS SLEEVE BECOMES MOLTEN AND STARTS TO FLOW;
Claim 2
Independent Claim 152 words
THE METHOD OF MAKING A GLASS ENCAPSULATED SEMICONDUCTOR DEVICE COMPRISING (I) A SEMICONDUCTOR DIE HAVING FIRST AND SECOND FACES, A CIRCUMFERENTIAL EDGE AND AT LEAST ONE PN JUNCTION BETWEEN SAID FACES; (II) FIRST AND SECOND ELECTTRICALLY CONDUCTING METAL SLUGS, EACH OF SAID SLUGS HAVING AT LEAST ONE LAYER OF AN ELECTRICALLY CONDUCTING METAL COATED OVER FIRST AND SECOND ENDS THEREOF, AND A LAYER OF AN OXIDE OF SAID METAL COATED OVER A CIRCUMFERENTIAL SURFACE THEREOF, WHICH METHOD COMPRISES THE STEPS OF: A. HOLDING TOGETHER AN ASSEMBLY COMPRISED OF SAID DIE, SAID SLUGS AND A GLASS SLEEVE, SAID DIE AND SAID SLUGS BEING DISPOSED WITHIN SAID GLASS SLEEVE, SAID FIRST AND SECOND FACES OF SAID DIE BEING IN CONTACTING RELATION WITH SAID FIRST ENDS OF SAID FIRST AND SECOND SLUGS RESPECTIVELY; B. HEATING THE ASSEMBLY OF STEP (A) IN A PARTIALLY EVACUATED CHAMBER UNTIL SAID GLASS SLEEVE BECOMES MOLTEN AND STARTS TO FLOW;
Claim 3
Dependent Claim 20 words
The method of claim 1 wherein said assembly is heated to a temperature in the range from 650*C to 800*C.
Claim 4
Dependent Claim 35 words
The method of claim 1 wherein, before said heating step (b), said circumferential edge of said die and said circumferential surfaces of said slugs are in juxtaposition with the interior surface of said glass sleeve.
Claim 5
Dependent Claim 25 words
The method of claim 1 wherein said layer of oxide chemically dissolves into said glass sleeve when said glass sleeve is subjected to said heat.
Claim 6
Dependent Claim 40 words
The method of claim 1 wherein said chamber is evacuated to approximately 250 microns and nitrogen is injected into said chamber so as to cause the pressure therein to increase rapidly to a pressure in the range from 40-45 p.s.i.
Claim 7
Dependent Claim 30 words
The method of claim 1 wherein said first and second leads are brazed to said second ends of said slugs at a temperature in the range from 400*C to 650*C.

References Cited (Backward Citations)

US3300841A Cited
US3621563A Cited
US3631589A Cited
US3689392A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1977-10-28 1978-04-29 1978-10-29 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1981-10-28 1982-04-29 1982-10-29 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1985-10-28 1986-04-29 1986-10-29 $7700.00 Window Closed / Lapsed

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