US3943442A
Expired / Lapsed
US
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Method and apparatus for measurement of trap density and energy distribution in dielectric films
Assignee: National Aeronautics and Space Administration
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Filing: 1974-11-11
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Granted: 1976-03-09
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Expires: 1994-11-11
Abstract
Abstract Trap densities in dielectric films can be determined by tunnel injection measurements when the film is incorporated in an insulated-gate field-effect transistor (IGFET). Under applied bias to the transistor gate, carriers (electrons or holes) tunnel into traps in the dielectric film. The resulting space charge tends to change channel conductance. By feeding back a signal from the source contact to the gate electrode, channel conductance is held constant, and by recording the gate voltage as a function of time, trap density can be determined as a function of distance from the dielectric-semiconductor interface. The process is repeated with the gate bias voltage at different levels in order to determine the energy distribution of traps as a function of distance from the interface.
Inventors
- 👤 with respect to an invention of Fletcher James C. Administrator of the National Aeronautics and Space Administration
- 👤 Joseph Maserjian
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 16:50
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/26; G01R31/2607; G01R31/2637
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
171 words
A method of determining trap densities in a dielectric film comprised of the steps of incorporating said dielectric film as an insulator between a layer of metal and a semiconductor substrate, incorporating said metal-insulator-semiconductor structure in an insulated-gate, field-effect transistor by using said metal layer as a gate electrode, and providing spaced apart ohmic contacts to regions doped opposite to said semiconductor substrate to serve as source and drain contacts, applying bias voltage to said source and drain contacts for current to flow through a channel of said semiconductor layer between said source and drain contacts, applying a bias voltage to said gate electrode, thus causing carriers to tunnel into traps in said dielectric film to create a space charge that tends to cause a change in conductance of said channel, and detecting said change of injected space charge by measuring the change in relationship between channel conductance and gate bias voltage applied as a function of time to determine trap density as a function of distance from the dielectric-semiconductor interface.
Claim 2
Independent Claim
171 words
A method of determining trap densities in a dielectric film comprised of the steps of incorporating said dielectric film as an insulator between a layer of metal and a semiconductor substrate, incorporating said metal-insulator-semiconductor structure in an insulated-gate, field-effect transistor by using said metal layer as a gate electrode, and providing spaced apart ohmic contacts to regions doped opposite to said semiconductor substrate to serve as source and drain contacts, applying bias voltage to said source and drain contacts for current to flow through a channel of said semiconductor layer between said source and drain contacts, applying a bias voltage to said gate electrode, thus causing carriers to tunnel into traps in said dielectric film to create a space charge that tends to cause a change in conductance of said channel, and detecting said change of injected space charge by measuring the change in relationship between channel conductance and gate bias voltage applied as a function of time to determine trap density as a function of distance from the dielectric-semiconductor interface.
Claim 3
Dependent Claim
97 words
A method as defined in claim 1 wherein the density, N t , of traps per unit volume as a function of distance x, from the interface between said dielectric film and said semiconductor substrate is calculated from the equation: ##EQU3## where C g is the gate capacitance per unit area; a is a tunneling parameter; q is the elementary charge; ΔV g is the change in gate voltage with respect to the initial value at time 0 required to maintain channel conductance constant, and t is the time in seconds after applying said gate bias voltage.
Claim 4
Dependent Claim
31 words
A method as defined in claim 2 wherein the entire process is repeated with a different bias voltage applied to said gate electrode for determination of energy distribution of said traps.
Claim 5
Dependent Claim
44 words
A method as defined in claim 3 wherein the density of traps per unit volume and per unit energy at said distance x is calculated from the equation: ##EQU4## where ε is the dielectric constant, V go is the gate voltage at time 0.
Claim 6
Dependent Claim
185 words
Apparatus for determining trap densities in a dielectric film, where said dielectric film is incorporated as an insulator between a layer of metal and a semiconductor substrate, and where the resulting metal-insulator-semiconductor structure is incorporated in an insulated-gate, field-effect transistor by using said metal layer as a gate electrode, and providing spaced apart ohmic contacts to regions doped opposite to said semiconductor substrate to serve as source and drain contacts, said apparatus comprising means for applying bias voltage to said source and drain contacts for current to flow through a channel of said semiconductor layer between said source and drain contacts, means for applying a bias voltage to said gate electrode, thus causing carriers to tunnel into traps in said dielectric film to create a space charge that tends to cause a change in conductance of said channel, means for feeding back a signal from said channel to said gate electrode to hold channel conductance constant, and means for recording the change in gate voltage applied as a function of time to determine trap density as a function of distance from the dielectric semiconductor interface.
Claim 7
Dependent Claim
185 words
Apparatus for determining trap densities in a dielectric film, where said dielectric film is incorporated as an insulator between a layer of metal and a semiconductor substrate, and where the resulting metal-insulator-semiconductor structure is incorporated in an insulated-gate, field-effect transistor by using said metal layer as a gate electrode, and providing spaced apart ohmic contacts to regions doped opposite to said semiconductor substrate to serve as source and drain contacts, said apparatus comprising means for applying bias voltage to said source and drain contacts for current to flow through a channel of said semiconductor layer between said source and drain contacts, means for applying a bias voltage to said gate electrode, thus causing carriers to tunnel into traps in said dielectric film to create a space charge that tends to cause a change in conductance of said channel, means for feeding back a signal from said channel to said gate electrode to hold channel conductance constant, and means for recording the change in gate voltage applied as a function of time to determine trap density as a function of distance from the dielectric semiconductor interface.
Claim 8
Dependent Claim
81 words
Apparatus as defined in claim 5 wherein said means for feeding back a signal from said channel to said gate electrode is comprised of an operational amplifier having a negative feedback circuit from its output terminal to an inverting input terminal thereof, a direct-current connection between said inverting input terminal and said source contact, a source of bias voltage, and a switch for additively connecting said source of bias voltage and said output terminal of said amplifier to said gate electrode.
Claim 9
Dependent Claim
49 words
Apparatus as defined in claim 6 including a second switch connected across said amplifier from said inverting input terminal to said output terminal, said second switch being adapted to be closed while said bias voltage switch is open, and to be opened when said bias voltage switch is closed.
Claim 10
Dependent Claim
14 words
Apparatus as defined in claim 7 wherein said source of bias voltage is variable.
Claim 11
Dependent Claim
20 words
Apparatus as defined in claim 8 including means for recording the output of said amplifier as a functiion of time.
Claim 12
Dependent Claim
35 words
Apparatus as defined in claim 9 wherein said recording means includes an oscilloscope for high speed recording over short periods of time and a chart recorder for low speed recording over longer periods of time.
References Cited (Backward Citations)
US3859595A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-03-09 | 1979-09-08 | 1980-03-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-03-09 | 1983-09-08 | 1984-03-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-03-09 | 1987-09-08 | 1988-03-09 | $7700.00 | Window Closed / Lapsed |