US3938176A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for fabricating dielectrically isolated semiconductor components of an integrated circuit
Assignee: Texas Instruments Inc
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Filing: 1973-09-24
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Granted: 1976-02-10
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Expires: 1993-09-24
Abstract
Abstract Disclosed is a method of fabricating dielectrically isolated semiconductor components of an integrated circuit, and the semiconductor component formed by this method, each component having a plurality of high conductivity regions extending from the interior of said component to the surface thereof to provide high conductivity paths to selected semiconductor regions of the component.
Inventors
- 👤 Benjamin Johnston Sloan, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 09:26
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/20; H10D; H10D99/00; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/019; H10W10/061; H10W10/10; H10W10/17; H10W10/181; Y; Y10; Y10S; Y10S148/00; Y10S148/02; Y10S148/085
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
147 words
A dielectrically isolated semiconductor component of an integrated circuit in a substrate, comprising: a. a dielectrically isolated pocket of monocrystalline semiconductor material of one conductivity type in said substrate, said isolation being furnished by a layer of insulating material between said pocket and the remainder of said substrate, said insulating layer having selected spaced ridges in close proximity to one surface of said pocket; b. a region of said one conductivity type but of greater conductivity in said pocket and adjacent said insulating layer; c. a plurality of rows of semiconductor regions of the opposite conductivity type in said pocket; and, d. a plurality of rows of high conductivity regions of said one conductivity type in said pocket, alternating with said rows of semiconductor regions, said high conductivity regions extending from the surface of said pocket in contact with said region of high conductivity, along said ridges.
Claim 2
Dependent Claim
147 words
A dielectrically isolated semiconductor component of an integrated circuit in a substrate, comprising: a. a dielectrically isolated pocket of monocrystalline semiconductor material of one conductivity type in said substrate, said isolation being furnished by a layer of insulating material between said pocket and the remainder of said substrate, said insulating layer having selected spaced ridges in close proximity to one surface of said pocket; b. a region of said one conductivity type but of greater conductivity in said pocket and adjacent said insulating layer; c. a plurality of rows of semiconductor regions of the opposite conductivity type in said pocket; and, d. a plurality of rows of high conductivity regions of said one conductivity type in said pocket, alternating with said rows of semiconductor regions, said high conductivity regions extending from the surface of said pocket in contact with said region of high conductivity, along said ridges.
Claim 3
Dependent Claim
13 words
A semiconductor component as described in claim 1, wherein said pocket is silicon.
Claim 4
Dependent Claim
15 words
The semiconductor component as described in claim 1, wherein said insulating layer is silicon oxide.
Claim 5
Dependent Claim
15 words
The semiconductor component as described in claim 1, wherein said insulating layer is silicon nitride.
Claim 6
Dependent Claim
14 words
The semiconductor component as described in claim 1, wherein said material is polycrystalline silicon.
Claim 7
Dependent Claim
158 words
An integrated circuit of dielectrically isolated semiconductor components in a substrate, comprising: a. dielectrically isolated pockets of monocrystalline semiconductor material of one conductivity type in said substrate, said isolation being furnished by a layer of insulating material between said pockets and the remainder of said substrate, said insulating layer having selected spaced ridges in close proximity to one surface of each of said pockets; b. a region of said one conductivity type but of higher conductivity in each of said pockets and adjacent said insulating layer; c. a plurality of rows of semiconductor regions of the opposite conductivity type in each of said pockets; and, d. a plurality of rows of high conductivity regions of said one conductivity type in each of said pockets, alternating with said rows of semiconductor regions, said high conductivity regions extending from the surface of said pockets in contact with said region of high conductivity in each of said pockets, along said ridges.
Claim 8
Dependent Claim
158 words
An integrated circuit of dielectrically isolated semiconductor components in a substrate, comprising: a. dielectrically isolated pockets of monocrystalline semiconductor material of one conductivity type in said substrate, said isolation being furnished by a layer of insulating material between said pockets and the remainder of said substrate, said insulating layer having selected spaced ridges in close proximity to one surface of each of said pockets; b. a region of said one conductivity type but of higher conductivity in each of said pockets and adjacent said insulating layer; c. a plurality of rows of semiconductor regions of the opposite conductivity type in each of said pockets; and, d. a plurality of rows of high conductivity regions of said one conductivity type in each of said pockets, alternating with said rows of semiconductor regions, said high conductivity regions extending from the surface of said pockets in contact with said region of high conductivity in each of said pockets, along said ridges.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-02-09 | 1979-08-11 | 1980-02-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-02-09 | 1983-08-11 | 1984-02-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-02-09 | 1987-08-11 | 1988-02-10 | $7700.00 | Window Closed / Lapsed |