Integrated power transistor with ballasting resistance and breakdown protection

Claim 1

An integrated semiconductor device having resistor ballasting and having reverse bias breakdown protection comprising; a body of semiconductor material having one type conductivity and having at least a first and a second surface, at least one first region, having a second type conductivity, adjacent said first surface and forming an equal number of first PN junctions at the interface therebetween, at least one second region, having said second type conductivity, adjacent said first surface, and forming at least one second PN junction at the interface with said body of semiconductor material and being spaced apart from said first region thereby, at least one third region, having said one type conductivity, within said first region and separated from said body of semiconductor material thereby, said third region and said first region have a third PN junction at their interface, a plurality of jumper means, insulatingly disposed over said body of semiconductor material, providing electrical paths from said second region to said third region, first terminal means providing electrical contact to said body of semiconductor material, second terminal means providing electrical contact to said first region, and third terminal means providing electrical contact to said second region, said third terminal means being spaced apart from said plurality of jumper means.