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US3936810A Expired / Lapsed US ⏱️ 0.0 years remaining

Sense line balancing circuit

Assignee: SEMI Inc
•
Filing: 1975-01-20
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Granted: 1976-02-03
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Expires: 1995-01-20
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Abstract

Abstract In semiconductor memory cells of the type including flip flop circuits in each cell and two sense output lines for determining the binary bits stored in the cell, an attempt to read data stored in the cell after a previous operation, before the sense lines have been fully restored to their quiescent state can result in the loss of data. This invention provides a means for restoring the sense lines very rapidly after an operation so that loss of data is prevented and the memory may be accessed at a higher frequency.

Inventors

  • 👤 William C. Dunn

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-05 12:34
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41; G11C11/412; G11C11/413; G11C11/417; G11C11/419

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 98 words
In a semiconductor memory of the type wherein there is an array of binary memory elements, for each column of elements there is provided a common pair of sense lines connected to each element, for each row of elements there being provided a common access line for enabling read out of the data stored in the elements connected thereto, the improvement comprising for each pair of sense lines, a separate means for equalizing voltages on said pair of sense lines during the intervals between actuation of said chip select lines for providing a read out from said memory.
Claim 2
Dependent Claim 98 words
In a semiconductor memory of the type wherein there is an array of binary memory elements, for each column of elements there is provided a common pair of sense lines connected to each element, for each row of elements there being provided a common access line for enabling read out of the data stored in the elements connected thereto, the improvement comprising for each pair of sense lines, a separate means for equalizing voltages on said pair of sense lines during the intervals between actuation of said chip select lines for providing a read out from said memory.
Claim 3
Dependent Claim 69 words
In a semiconductor memory as recited in claim 1 wherein said means for equalizing the voltages between each pair of sense lines comprises an inoperative switch means connected between each pair of sense lines, and means for rendering all of said inoperative switch means operative for equalizing the potentials on each pair of sense lines, during the intervals between read out from the memory elements of said semiconductor memory.
Claim 4
Dependent Claim 74 words
In a semiconductor memory as recited in claim 2 wherein an inoperative switch means comprises an FET semiconductor having source, drain, and gate electrodes, and means connecting said source electrode to one of said sense lines and said drain electrode to the other of said sense lines, and means for applying a potential to said gate electrode for turning said FET on when no potential is applied to any of said chip select lines.
Claim 5
Dependent Claim 77 words
In a semiconductor memory as recited in claim 3 wherein said means for applying a potential to said gate electrode for turning said FET on when there is no potential applied to any one of the chip access lines comprises an inverter circuit having its output connected to the gate of said FET, and means for applying a signal to said inverter circuit to maintain its output low during the occurrence of read out from said memory.

References Cited (Backward Citations)

US3693170A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1979-02-02 1979-08-04 1980-02-03 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1983-02-02 1983-08-04 1984-02-03 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1987-02-02 1987-08-04 1988-02-03 $7700.00 Window Closed / Lapsed

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