Patent US3935635A successfully refreshed from Google Patents.
US3935635A
Expired / Lapsed
US
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Method of producing a semiconductor arrangement
Assignee: Telefunken Electronic GmbH
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Filing: 1974-03-22
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Granted: 1976-02-03
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Expires: 1994-03-22
Abstract
Abstract A method of producing a semiconductor arrangement comprises electrolytically depositing a thickening onto a metal layer, at the contact points for the semiconductor arrangement, which metal layer is intended to eventually form conducting paths for the semiconductor arrangement and effectively covers the relevant semiconductor body surface.
Inventors
- 👤 Leonhard Botzenhardt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 12:25
CPC Classifications
H; H10; H10P; H10P95/00; H10P14/00; H10P14/40; H10P14/46; H10P14/47; H10W; H10W20/00; H10W20/40
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
212 words
A method for producing a semiconductor arrangement from a semiconductor body covered with an insulating layer provided with windows at desired points of connection to regions in the semiconductor body, said arrangement having conducting paths running on the insulating layer and contacting the regions in the semiconductor body and the conducting paths at certain points being so reinforced by electrolytically deposited metal that the thickened contact parts resulting in this case are suitable for the wire-less contacting of the semiconductor arrangement, comprising: firstly applying a metal layer over said insulating layer provided with windows to cover said insulating layer and said windows; covering the portions of said metal layer corresponding to the desired positions of said conducting paths with a first masking layer, which moveover leaves uncovered the portions of said metal layer to be provided with said thickened contact parts; thereafter covering the entire semiconductor surface, with the exception of the portions to be provided with said reinforced contact parts, with a second masking layer; electrolytically depositing said thickened contact parts on said metal layer at said portions left uncovered by the two masking layers; thereafter removing said second masking layer; subsequently removing said metal layer at the positions not covered by said first masking layer to produce said conducting paths.
Claim 2
Independent Claim
212 words
A method for producing a semiconductor arrangement from a semiconductor body covered with an insulating layer provided with windows at desired points of connection to regions in the semiconductor body, said arrangement having conducting paths running on the insulating layer and contacting the regions in the semiconductor body and the conducting paths at certain points being so reinforced by electrolytically deposited metal that the thickened contact parts resulting in this case are suitable for the wire-less contacting of the semiconductor arrangement, comprising: firstly applying a metal layer over said insulating layer provided with windows to cover said insulating layer and said windows; covering the portions of said metal layer corresponding to the desired positions of said conducting paths with a first masking layer, which moveover leaves uncovered the portions of said metal layer to be provided with said thickened contact parts; thereafter covering the entire semiconductor surface, with the exception of the portions to be provided with said reinforced contact parts, with a second masking layer; electrolytically depositing said thickened contact parts on said metal layer at said portions left uncovered by the two masking layers; thereafter removing said second masking layer; subsequently removing said metal layer at the positions not covered by said first masking layer to produce said conducting paths.
Claim 3
Dependent Claim
55 words
A method as defined in claim 1, wherein after the production of said conducting paths by partial removal of said metal layer, said first masking layer is removed and the entire surface is covered with a further insulating layer, and wherein connection windows are formed in said further insulating layer at said thickened contact parts.
Claim 4
Dependent Claim
25 words
A method as defined in claim 1, wherein said two masking layers comprise photo lacquer layers which are soluble in or removable by different media.
Claim 5
Dependent Claim
28 words
A method as defined in claim 3, wherein one of said masking layers comprises negative photo lacquer and the other of said masking layers comprises positive photo lacquer.
Claim 6
Dependent Claim
46 words
A method as defined in claim 1, wherein said metal layer comprises a plurality of individual layers arranged one on the other, wherein gold is used as the uppermost individual layer and wherein said thickened contact parts of gold are electrolytically deposited onto said gold layer.
Claim 7
Dependent Claim
26 words
A method as defined in claim 5, wherein the lowermost metal individual layer running directly on said insulating layer or on said semiconductor material comprises titanium.
Claim 8
Dependent Claim
27 words
A method as defined in claim 6, wherein an intermediate layer of molybdenum, tungsten, palladium or platinum is arranged between said gold layer and said titanium layer.
Claim 9
Independent Claim
175 words
A method of producing contacts and conductive paths for a semiconductor body provided with one or more regions to be contacted comprising: applying an insulating layer defining contact windows for said regions to a surface of said semiconductor body; covering said insulating layer and said windows with a metal layer; forming a first masking layer on said metal layer for covering the portions of said metal layer which are to form conducting paths and leaving exposed undesired portions of said metal layer and portions thereof on which thickened metal contacts for the conductive paths are to be provided; covering said first masking layer and the exposed portions of said metal layer with the exception of said portions on which the thickened metal contacts are to be provided with a second masking layer; electrolytically depositing said thickened metal contacts on the portions of said metal layer left exposed by both said first and second masking layers; thereafter removing said second masking layer; and removing the exposed portions of said metal layer to form said conductive paths.
Claim 10
Independent Claim
175 words
A method of producing contacts and conductive paths for a semiconductor body provided with one or more regions to be contacted comprising: applying an insulating layer defining contact windows for said regions to a surface of said semiconductor body; covering said insulating layer and said windows with a metal layer; forming a first masking layer on said metal layer for covering the portions of said metal layer which are to form conducting paths and leaving exposed undesired portions of said metal layer and portions thereof on which thickened metal contacts for the conductive paths are to be provided; covering said first masking layer and the exposed portions of said metal layer with the exception of said portions on which the thickened metal contacts are to be provided with a second masking layer; electrolytically depositing said thickened metal contacts on the portions of said metal layer left exposed by both said first and second masking layers; thereafter removing said second masking layer; and removing the exposed portions of said metal layer to form said conductive paths.
Claim 11
Dependent Claim
15 words
A method as defined in claim 8, further comprising thereafter removing said first masking layer.
Claim 12
Dependent Claim
27 words
A method as defined in claim 9, and comprising finally applying an insulating layer to said semiconductor body for defining windows as said thickened metal contact points.
References Cited (Backward Citations)
US3556951A
Cited
US3495324A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-02-02 | 1979-08-04 | 1980-02-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-02-02 | 1983-08-04 | 1984-02-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-02-02 | 1987-08-04 | 1988-02-03 | $7700.00 | Window Closed / Lapsed |