Abstract Diodes of a particular type are fine tuned with irradiation to optimize the reverse recovery time while minimizing forward voltage drop and providing more uniform electrical characteristics. The initial and desired minority carrier lifetimes in the anode region of the type are determined as a function of forward voltage drop and reverse recovery time, and the minority carrier radiation damage factor is determined for a desired type of diode and radiation source. The radiation dosage to achieve the desired carrier lifetime with the radiation source is thereafter determined from the function 1/ tau = 1/ tau o + K phi , where tau is the desired minority carrier lifetime, tau o is the initial minority carrier lifetime, K is the determined minority carrier radiation damage factor and phi is the radiation dosage. A major surface and preferably the major surface adjoining the anode region of the diodes is then irradiated with the radiation source to the determined radiation dosage. Preferably, the radiation dosage is between about 1 x 1012 and 5 x 1013 e/cm2, with electron radiation of intensity between 1 and 3 Mev.
Inventors
👤 Krishan S. Tarneja
👤 John Bartko
👤 Joseph E. Johnson
Bibliographic Details
Application Number—
JurisdictionUS
Data Sourcegoogle_patents
Last Synchronized2026-10-27 12:16
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P95/00
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
164 words
A method of fine tuning a diode of a type of diodes comprising the steps of: A. determining the minority carrier radiation damage factor for the type of diode with a given electron radiation source of intensity between about 1 and 3 Mev; B. measuring the nominal minority carrier lifetime in the anode region of the type of diode; C. establishing the nominal minority carrier lifetime desired in the anode region of the type of diode; D. thereafter determining the radiation dosage from the given electron radiation source to obtain the desired nominal minority carrier lifetime by the relationship 1/τ = 1/τ o + Kφ where τ is the established nominal minority carrier lifetime, τ o is the measured nominal minority carrier lifetime, K is the minority carrier radiation damage factor, and φ is the electron radiation dosage; and E. irradiating a major surface of at least one diode of the type of diodes with the given radiation source to the determined radiation dosage.
Claim 2
Independent Claim
164 words
A method of fine tuning a diode of a type of diodes comprising the steps of: A. determining the minority carrier radiation damage factor for the type of diode with a given electron radiation source of intensity between about 1 and 3 Mev; B. measuring the nominal minority carrier lifetime in the anode region of the type of diode; C. establishing the nominal minority carrier lifetime desired in the anode region of the type of diode; D. thereafter determining the radiation dosage from the given electron radiation source to obtain the desired nominal minority carrier lifetime by the relationship 1/τ = 1/τ o + Kφ where τ is the established nominal minority carrier lifetime, τ o is the measured nominal minority carrier lifetime, K is the minority carrier radiation damage factor, and φ is the electron radiation dosage; and E. irradiating a major surface of at least one diode of the type of diodes with the given radiation source to the determined radiation dosage.
Claim 3
Dependent Claim
30 words
A method of fine tuning a diode of a type of diodes as set forth in claim 1 wherein: the major surface irradiated adjoins the anode region of the diode.
Claim 4
Dependent Claim
46 words
A method of fine tuning a diode of a type of diodes as set forth in claim 1 wherein: the desired minority carrier lifetime is such that the radiation dosage is between about 1 × 10 12 and 5 × 10 13 electrons per centimeter squared.
Claim 5
Dependent Claim
38 words
A method of fine tuning a diode of a type of diodes as set forth in claim 3 wherein: the radiation dosage is between about 5 × 10 12 and 2 × 10 13 electrons per centimeter squared.