Switching device equipped with a semiconductor memory element

Claim 2

Switching apparatus, comprising: a semiconductor memory element having a semiconductor substrate of a first conductivity type, first and second regions of a different conductivity type from that of said substrate formed separately in the surface of said substrate and forming corresponding step junctions with said substrate, wherein said second region is highly doped, a first insulating film through which charge carriers can pass overlying all but said first region, and a second insulating film having charge carrier trapping levels overlying said first insulating film; first, second, and third electrodes in contact, respectively, with said first region, said substrate, and said second insulating film; a D.C. source coupled between said first and second electrodes and providing a reverse bias potential between said first and second electrodes; first and second control circuits coupled between said second and third electrodes, said control circuits including means for supplying voltages of opposite polarity between said second and third electrodes; and control terminal means for sensing the touch of a human body and for selectively coupling said first and second control circuits between said second and third electrodes.

Claim 3

Switching apparatus, comprising: a semiconductor memory element having a semiconductor substrate of a first type, a first region of different conductivity type from said substrate and a second region of the same conductivity type as said substrate, wherein said second region is highly doped, said first and second regions being formed separately in the surface of said substrate and forming corresponding step junctions with said substrate, a first insulating film through which carriers can pass formed on the surface of said substrate between said first and second regions, and a second insulating film having charge carrier trapping levels formed on said first film between said first and second regions; first, second, third and fourth electrodes in contact, respectively, with said first region, said second region, said second insulating film and said substrate; A.C. power supply and load means connected in series and coupled to said first electrode through an impedance element and rectifier, and to said second electrode to provide a D.C. reverse bias voltage between said first and second electrodes; and further means for selectively coupling an A.C. hum voltage of opposite polarity, induced in a human body from a high impedance coupling to an A.C. line voltage through rectifying means, between said third and fourth electrodes wherein the fourth electrode is connected to a reference A.C. voltage supply means.

Claim 4

Switching apparatus, comprising: a semiconductor memory element having a semiconductor substrate of a first type, a first region of different conductivity type from said substrate and a second region of the same conductivity type as said substrate, wherein said second region is highly doped, said first and second regions being formed separately in the surface of said substrate and forming corresponding step junctions with said substrate, a first insulating film through which carriers can pass formed on the surface of said substrate between said first and second regions, and a second insulating film having charge carrier trapping levels formed on said first film between said first and second regions; first, second, third and fourth electrodes in contact, respectively, with said first region, said second region, said second insulating film and said substrate; A.C. power supply and load means connected in series and coupled to said first electrode through an impedance element and rectifier, and to said second electrode to provide a D.C. reverse bias voltage between said first and second electrodes; and further means for selectively coupling an A.C. hum voltage of opposite polarity, induced in a human body from a high impedance coupling to an A.C. line voltage through rectifying means, between said third and fourth electrodes wherein the fourth electrode is connected to a reference A.C. voltage supply means.

Claim 5

The apparatus according to claim 2, wherein said selective coupling means comprising: first and second control terminals, to which said A.C. hum voltage is applied, connected to said third electrode through first and second rectifiers whose directions of current flow are opposite each other; and said A.C. reference voltage supply means includes series connected impedance elements across an A.C. supply line and the junction of said series-connected impedance elements is connected to said fourth electrode.

Claim 6

The apparatus according to claim 2, wherein said selective coupling means comprises: first and second control terminals, to which said A.C. hum voltage is applied, independently connected to said third electrode; a series-connected circuit including two rectifiers connected between said first and second control terminals, wherein the junction point of said two rectifiers is connected directly to said fourth electrode; and means for supplying said reference A.C. voltage to said fourth electrode.