Patent US3931631A successfully refreshed from Google Patents.
US3931631A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Gallium phosphide light-emitting diodes
Assignee: Monsanto Co
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Filing: 1974-04-01
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Granted: 1976-01-06
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Expires: 1994-04-01
Abstract
Abstract The disclosure herein pertains to a vapor phase process for the preparation of electroluminescent materials, particularly GaP, doped with isoelectronic impurities, particularly nitrogen, and to electroluminescent devices fabricated therefrom.
Inventors
- 👤 Warren O. Groves
- 👤 Arnold S. Epstein
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 16:49
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
116 words
An article of manufacture comprising a layer of electroluminescent GaP epitaxially grown from vapor phase reactant materials, said layer having a bulk region substantially free of nitrogen atoms and a surface region containing nitrogen atoms in a concentration within the range of from 1.0 - 3.0 × 10.sup. 19 cm - 3 , said bulk and surface regions both containing N-type impurity atoms in a concentration within the range of 2.0 × 10 16 cm - 3 to 2.0 × 10 17 cm - 3 and said surface region further containing P-type impurity atoms at a surface concentration of about 1 × 10 19 cm - 3 to define a P-N junction in said surface region.
Claim 2
Dependent Claim
116 words
An article of manufacture comprising a layer of electroluminescent GaP epitaxially grown from vapor phase reactant materials, said layer having a bulk region substantially free of nitrogen atoms and a surface region containing nitrogen atoms in a concentration within the range of from 1.0 - 3.0 × 10.sup. 19 cm - 3 , said bulk and surface regions both containing N-type impurity atoms in a concentration within the range of 2.0 × 10 16 cm - 3 to 2.0 × 10 17 cm - 3 and said surface region further containing P-type impurity atoms at a surface concentration of about 1 × 10 19 cm - 3 to define a P-N junction in said surface region.
Claim 3
Dependent Claim
19 words
An article of manufacture according to claim 1 wherein said layer is in epitaxial relationship with a suitable substrate.
Claim 4
Dependent Claim
25 words
An article of manufacture according to claim 1 further including ohmic contacts and leads to an external circuit attached to said bulk and surface regions.
Claim 5
Dependent Claim
13 words
An article of manufacture according to claim 2 wherein said substrate is GaP.
Claim 6
Dependent Claim
13 words
An article of manufacture according to claim 2 wherein said substrate is GaAs.
Claim 7
Dependent Claim
25 words
An article of manufacture according to claim 4 further including ohmic contacts and leads to an external circuit attached to said layer and said substrate.
Claim 8
Dependent Claim
25 words
An article of manufacture according to claim 5 further including ohmic contacts and leads to an external circuit attached to said layer and said substrate.
References Cited (Backward Citations)
US3687744A
Cited
US3646406A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-01-05 | 1979-07-07 | 1980-01-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-01-05 | 1983-07-07 | 1984-01-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-01-05 | 1987-07-07 | 1988-01-06 | $7700.00 | Window Closed / Lapsed |