Method of making semi-conductor devices utilizing a compensating prediffusion

Claim 1

A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDES FORMING A SEMICONDUCTOR BODY BY PROVIDING A SEMIDUCTOR SUBSTRATE OF ONE CONDUCTIVITY TYPE, FORMING IN A FIRST DIFFUSION STEP OF HEAVILY DOPED REGION OF OPPOSITE CONDUCTIVITY TYPE ADJACENT TO SELECTED PARTS OF ONE SURFACE OF THE SUBSTRATE, DIFFUSING INTO SAID SURFACE OF THE SUBSTRAT IN A SECOND DIFFUDSION STEP A CONDUCTIVITY-TYPE-DETERMINING IMPURITY TO PROVIDE AN IMPURITY CHARACTERISTIC OF SAID ONE CONDUCTIVITY TYPE, AND SUBSEQUENTLY DEPOSITING SEMICONDUCTOR MATERIAL ON SAID SURFACE OF THE SUBSTRATE TO FORM AN EPITAXIAL LAYER OF SAID ONE CONDUCTIVITY TYPE FROM AN ATMOSPHERE HAVING AS A CONSTITUENT A CONDUCTIVITY-TYPE-DETERMINING IMPURITY OF SAID ONE CONDUCTIVITY TYPE, THE EPITAXIAL DEPOSITION BEING OBTAINED SOLELY BY MODIFYING THE CONDITIONS UNDER WHICH THE SECOND DIFFUSION STEP WAS PERFORMED SUCH THAT THE ATMOSPHERE ABOVE THE SUBSTRATE DURING THE EPITAXIAL DEPOSITION ALSO CONTAINS A SOURCE OF THE SEMICONDUCTOR MATERIAL OF THE EPITAXIAL LAYER, THERE BEING INHERENTLY AN INTERFACE REGION HAVING A THICKNESS IN THE RANGE OF 10 TO 1000A BETWEEN THE BULK OF THE SUBSTRATE AND THE BULK OF THE EPITAXIAL LAYER DEPOSITED ON THE SUBSTRATE, THE PROPERTIES OF THE INTERFACE REGION BEING DETERMINED BY THE DIFFUSION OF THE CONDUCTIVITY-TYPE-DETERMINING IMPURITY TYPEVIDING AN IMPUTITY CHARACTERISTIC OF SAID ONE CONDUCTIVITY TYPE.

Claim 2

A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDES FORMING A SEMICONDUCTOR BODY BY PROVIDING A SEMIDUCTOR SUBSTRATE OF ONE CONDUCTIVITY TYPE, FORMING IN A FIRST DIFFUSION STEP OF HEAVILY DOPED REGION OF OPPOSITE CONDUCTIVITY TYPE ADJACENT TO SELECTED PARTS OF ONE SURFACE OF THE SUBSTRATE, DIFFUSING INTO SAID SURFACE OF THE SUBSTRAT IN A SECOND DIFFUDSION STEP A CONDUCTIVITY-TYPE-DETERMINING IMPURITY TO PROVIDE AN IMPURITY CHARACTERISTIC OF SAID ONE CONDUCTIVITY TYPE, AND SUBSEQUENTLY DEPOSITING SEMICONDUCTOR MATERIAL ON SAID SURFACE OF THE SUBSTRATE TO FORM AN EPITAXIAL LAYER OF SAID ONE CONDUCTIVITY TYPE FROM AN ATMOSPHERE HAVING AS A CONSTITUENT A CONDUCTIVITY-TYPE-DETERMINING IMPURITY OF SAID ONE CONDUCTIVITY TYPE, THE EPITAXIAL DEPOSITION BEING OBTAINED SOLELY BY MODIFYING THE CONDITIONS UNDER WHICH THE SECOND DIFFUSION STEP WAS PERFORMED SUCH THAT THE ATMOSPHERE ABOVE THE SUBSTRATE DURING THE EPITAXIAL DEPOSITION ALSO CONTAINS A SOURCE OF THE SEMICONDUCTOR MATERIAL OF THE EPITAXIAL LAYER, THERE BEING INHERENTLY AN INTERFACE REGION HAVING A THICKNESS IN THE RANGE OF 10 TO 1000A BETWEEN THE BULK OF THE SUBSTRATE AND THE BULK OF THE EPITAXIAL LAYER DEPOSITED ON THE SUBSTRATE, THE PROPERTIES OF THE INTERFACE REGION BEING DETERMINED BY THE DIFFUSION OF THE CONDUCTIVITY-TYPE-DETERMINING IMPURITY TYPEVIDING AN IMPUTITY CHARACTERISTIC OF SAID ONE CONDUCTIVITY TYPE.

Claim 9

A method of manufacturing a semiconductor device includes forming a semiconductor body by providing a semiconductor substrate of one conductivity type, forming in a first diffusion step a heavily doped region of an opposite conductivity type adjacent to selected parts of one surface of the substrate, diffusing a conductivity-type-determining impurity of said one conductivity type into said surface of the substrate in a second diffusion step, subsequently depositing semiconductor material on said surface of said substrate to form an epitaxial semiconductor layer on said surface from an atmosphere having as a constituent a conductivity-type-determining impurity of said one conductivity type, the epitaxial deposition being obtained solely by modifying the conditions under which the second diffusion step was performed such that the atmosphere above the substrate during the epitaxial deposition also contains a source of the semiconductor material of the epitaxial layer, there being inherently an interface region having a thickness in the range of 10 to 1000A between the bulk of the substrate and the bulk of the epitaxial layer deposited on the substrate, and forming the semiconductor device in the semiconductor body at the selected parts so as to include said heavily doped region and at least a part of the interface region, the properties of the interface region being determined by the diffusion of the conductivity-type-determining impurity providing an impurity characteristic of said one conductivity type.

Claim 10

A method of manufacturing a semiconductor device includes forming a semiconductor body by providing a semiconductor substrate of one conductivity type, forming in a first diffusion step a heavily doped region of an opposite conductivity type adjacent to selected parts of one surface of the substrate, diffusing a conductivity-type-determining impurity of said one conductivity type into said surface of the substrate in a second diffusion step, subsequently depositing semiconductor material on said surface of said substrate to form an epitaxial semiconductor layer on said surface from an atmosphere having as a constituent a conductivity-type-determining impurity of said one conductivity type, the epitaxial deposition being obtained solely by modifying the conditions under which the second diffusion step was performed such that the atmosphere above the substrate during the epitaxial deposition also contains a source of the semiconductor material of the epitaxial layer, there being inherently an interface region having a thickness in the range of 10 to 1000A between the bulk of the substrate and the bulk of the epitaxial layer deposited on the substrate, and forming the semiconductor device in the semiconductor body at the selected parts so as to include said heavily doped region and at least a part of the interface region, the properties of the interface region being determined by the diffusion of the conductivity-type-determining impurity providing an impurity characteristic of said one conductivity type.