Patent US3928096A successfully refreshed from Google Patents.
US3928096A
Expired / Lapsed
US
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Boron doping of semiconductors
Assignee: OI Glass Inc
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Filing: 1974-01-07
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Granted: 1975-12-23
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Expires: 1994-01-07
Abstract
Abstract Disclosed is a method for diffusion doping of silicon and germanium semiconductors by the vapor phase transport of B2O3 from a solid B2O3 source to the silicon semiconductor, wherein the solid B2O3 source comprises a rigid, dimensionally stable, glass-ceramic body containing at least about 10 mole percent of B2O3 in the glassy phase, the crystalline phase, or both.
Inventors
- 👤 Peter J Vergano
- 👤 William E Smith
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:12
CPC Classifications
C; C30; C30B; C30B31/00; C30B31/06; C30B31/16; C30B31/165; C03; C03C; C03C10/00; C03C10/0036; C03C10/0045; C03C3/00; C03C3/04; C03C3/062; C03C3/064; H; H10; H10P; H10P32/00; H10P32/10; H10P32/19; Y; Y10; Y10S; Y10S252/00; Y10S252/95; Y10S252/951
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
60 words
IN THE PROCESS FOR DOPING A SEMICONDUCTOR, WHEREIN A SEMICONDUCTOR AND A SOLID DOPANT HOST FOR VAPOR PHASE TRANSPORT OF B2O3 ARE MAINTAINED IN VAPOR PHASE COMMUNICATION AT A TEMPERATURE AND FOR A TIME SUFFICIENT TO FORM A ZONE OF P TYPE CONDUCTIVITY IN SAID SEMICONDUCTOR, THE IMPROVEMENT WHEREIN SAID SOLID DOPANT HOST COMPRISES A GLASS-CERAMIC BODY CONSISTING ESSENTIALLY OF:
Claim 2
Dependent Claim
60 words
IN THE PROCESS FOR DOPING A SEMICONDUCTOR, WHEREIN A SEMICONDUCTOR AND A SOLID DOPANT HOST FOR VAPOR PHASE TRANSPORT OF B2O3 ARE MAINTAINED IN VAPOR PHASE COMMUNICATION AT A TEMPERATURE AND FOR A TIME SUFFICIENT TO FORM A ZONE OF P TYPE CONDUCTIVITY IN SAID SEMICONDUCTOR, THE IMPROVEMENT WHEREIN SAID SOLID DOPANT HOST COMPRISES A GLASS-CERAMIC BODY CONSISTING ESSENTIALLY OF:
Claim 3
Dependent Claim
12 words
The process of claim 1 wherein said glass-ceramic body consists essentially of:
Claim 4
Dependent Claim
14 words
The process of claim 1 wherein said semiconductor is an N type silicon semiconductor.
Claim 5
Dependent Claim
27 words
The process of claim 3 wherein said silicon semiconductor is contacted with an atmosphere consisting essentially of B2O3 vapors and a carrier gas for said B2O3 vapors.
Claim 6
Dependent Claim
18 words
The process of claim 3 wherein said temperature is in the range of about 700*C to about 1200*C.
Claim 7
Dependent Claim
17 words
The method of claim 5 wherein said temperature is in the range of 850*C to about 1100*C.
Claim 8
Dependent Claim
31 words
The process for diffusing boron into a silicon semiconductor comprising the steps of: positioning at least one silicon semiconductor in a heating chamber; positioning a glass-ceramic dopant host consisting essentially of:
Claim 9
Dependent Claim
31 words
The process for diffusing boron into a silicon semiconductor comprising the steps of: positioning at least one silicon semiconductor in a heating chamber; positioning a glass-ceramic dopant host consisting essentially of:
Claim 10
Dependent Claim
14 words
The process of claim 7 wherein said silicon semiconductor is an N type semiconductor.
Claim 11
Dependent Claim
20 words
The process of claim 8 wherein said silicon semiconductor and said glass-ceramic dopant host are in the form of wafers.
Claim 12
Dependent Claim
35 words
The process of claim 9 wherein a plurality of silicon semiconductor wafers and a plurality of glass-ceramic dopant wafers are alternately positioned with the planar wafer surfaces being substantially parallel and in spaced, confronting relationship.
Claim 13
Dependent Claim
31 words
The process of claim 9 wherein a pair of said semiconductor wafers in back-to-back contact are alternately positioned in substantially parallel, spaced, confronting relationShip with planar surfaces of said dopant wafers.
Claim 14
Dependent Claim
63 words
In the process for forming a P-N junction in an N type silicon semiconductor, wherein an N type semiconductor and a solid dopant host for vapor phase transport of boron are maintained in vapor phase communication at a temperature and for a time sufficient to form said P-N junction, the improvement wherein said solid dopant host comprises a glass-ceramic body consisting essentially of:
Claim 15
Dependent Claim
63 words
In the process for forming a P-N junction in an N type silicon semiconductor, wherein an N type semiconductor and a solid dopant host for vapor phase transport of boron are maintained in vapor phase communication at a temperature and for a time sufficient to form said P-N junction, the improvement wherein said solid dopant host comprises a glass-ceramic body consisting essentially of:
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-12-22 | 1979-06-23 | 1979-12-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-12-22 | 1983-06-23 | 1983-12-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-12-22 | 1987-06-23 | 1987-12-23 | $7700.00 | Window Closed / Lapsed |