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US3922708A
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Method of producing high value ion implanted resistors
Assignee: International Business Machines Corp
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Filing: 1974-03-04
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Granted: 1975-11-25
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Expires: 1994-03-04
Abstract
Abstract High value resistors, of the order of 109 ohms/square and higher, are fabricated by implanting zinc or lead ions into a silicon dioxide layer over a silicon chip containing electrical components and/or circuits.
Inventors
- 👤 Billy L Crowder
- 👤 Swie-In Tan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 16:51
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; H10P; H10P30/00; H10P30/40; H10W; H10W20/00; H10W20/40
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
58 words
A SEMICONDUCTOR WAFER HAVING A NETWORK OF ELECTRICAL CIRCUITRY ON ITS SURFACE, AN INSULATING LAYER OVER SAID SURFACE, RESISTIVE ELEMENTS IMBEDDED BY ION IMPLANTATION WITHIN THE BODY OF SAID INSULATING LAYER, SAID ELEMENTS HAVING RESISTIVITIES OF 10**7 TO 10**9 OHMS/SQUARE, AND MEANS IN SAID INSULATING LAYER FOR ALLOWING ELECTRICAL CONNECTION BETWEEN SAID ELECTRICAL CIRCUITRY AND SAID RESISTIVE ELEMENTS.
Claim 2
Dependent Claim
58 words
A SEMICONDUCTOR WAFER HAVING A NETWORK OF ELECTRICAL CIRCUITRY ON ITS SURFACE, AN INSULATING LAYER OVER SAID SURFACE, RESISTIVE ELEMENTS IMBEDDED BY ION IMPLANTATION WITHIN THE BODY OF SAID INSULATING LAYER, SAID ELEMENTS HAVING RESISTIVITIES OF 10**7 TO 10**9 OHMS/SQUARE, AND MEANS IN SAID INSULATING LAYER FOR ALLOWING ELECTRICAL CONNECTION BETWEEN SAID ELECTRICAL CIRCUITRY AND SAID RESISTIVE ELEMENTS.
Claim 3
Dependent Claim
11 words
The device of claim 1 wherein said semiconductor wafer is silicon.
Claim 4
Dependent Claim
12 words
The device of claim 2 wherein said insulating layer is silicon dioxide.
Claim 5
Dependent Claim
15 words
The device of claim 1 wherein said imbedded resistances consist of implanted ions of zinc.
Claim 6
Dependent Claim
15 words
The device of claim 1 wherein said imbedded resistance consists of implanted ions of lead.
Claim 7
Dependent Claim
16 words
The device of claim 1 wherein said imbedded resistor has a small temperature coefficient of resistivity.
References Cited (Backward Citations)
US3390012A
Cited
US3682700A
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US3705060A
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US3614480A
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US3693011A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-11-24 | 1979-05-26 | 1979-11-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-11-24 | 1983-05-26 | 1983-11-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-11-24 | 1987-05-26 | 1987-11-25 | $7700.00 | Window Closed / Lapsed |