Patent US3922579A successfully refreshed from Google Patents.
US3922579A
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US
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Photoconductive target
Assignee: Hitachi Ltd
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Filing: 1972-11-22
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Granted: 1975-11-25
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Expires: 1992-11-22
Abstract
Abstract A photoconductive target comprising a transparent substrate, a transparent conductive layer, an N-type semiconductor layer, and a P-type photoconductive layer, each of the layers being successively provided on the substrate, the P-type photoconductive layer forming together with the N-type semiconductor layer a heterojunction and consisting of tellurium not exceeding 30 atomic %, arsenic ranging from 2 to 30 atomic % and the remainder of selenium, and the hetero-junction being reverse biased.
Inventors
- 👤 Naohiro Goto
- 👤 Yukinao Izozaki
- 👤 Keiichi Shidara
- 👤 Eiichi Maruyama
- 👤 Tadaaki Hirai
- 👤 Kiyohisa Inao
- 👤 Ikue Mori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 10:16
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/222; H01; H01J; H01J29/00; H01J29/02; H01J29/10; H01J29/36; H01J29/39; H01J29/45; H01J29/451; H01J29/456; H10P; H10P95/00
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
92 words
A PHOTOCONDUCTIVE TARGET COMPRISING A TRANSPARENT SUBSTRATE HAVING A FLAT SURFACE, A TRANSPARENT CONDUCTIVE LAYER FORMED ON SAID SUBSTRATE, AND N-TYPE SEMICONDUCTOR FORMED ON SSAID CONDUCTIVE LAYER, AND A P-TYPE PHOTOCONDUCTIVE LAYER CONSISTING OF TELLURIM NOT EXCEEDING 30 ATOMIC %, ARSENIC RANGING FROM 2 TO 30 ATOMIC % AND THE REMAINDER OF SELENIUM PROVIDED ON SAID N-TYPE SEMICONDUCTOR LAYER AND FORMING A HETERO-JUNCTION THEREWITH, SAID HETERO-JUNCTION BEING REVERSE BIASED, SAID N-TYPE SEMICONDUCTOR LAYER COMPRISING A MATERIAL SELECTED FROM THE GROUP CONSISTING OF ZINC SELENIDE, CADMIUM SULFIDE, CADMIUM SELENIDE, ZINC SULFIDE, GALLIUM ARSENIDE,
Claim 2
Dependent Claim
92 words
A PHOTOCONDUCTIVE TARGET COMPRISING A TRANSPARENT SUBSTRATE HAVING A FLAT SURFACE, A TRANSPARENT CONDUCTIVE LAYER FORMED ON SAID SUBSTRATE, AND N-TYPE SEMICONDUCTOR FORMED ON SSAID CONDUCTIVE LAYER, AND A P-TYPE PHOTOCONDUCTIVE LAYER CONSISTING OF TELLURIM NOT EXCEEDING 30 ATOMIC %, ARSENIC RANGING FROM 2 TO 30 ATOMIC % AND THE REMAINDER OF SELENIUM PROVIDED ON SAID N-TYPE SEMICONDUCTOR LAYER AND FORMING A HETERO-JUNCTION THEREWITH, SAID HETERO-JUNCTION BEING REVERSE BIASED, SAID N-TYPE SEMICONDUCTOR LAYER COMPRISING A MATERIAL SELECTED FROM THE GROUP CONSISTING OF ZINC SELENIDE, CADMIUM SULFIDE, CADMIUM SELENIDE, ZINC SULFIDE, GALLIUM ARSENIDE,
Claim 3
Dependent Claim
32 words
A photoconductive target according to claim 1, further comprising a thin layer of a material selected from the group consisting of antimony trisulfide and arsenic triselenide extended on said P-type photoconductive layer.
Claim 4
Dependent Claim
27 words
A photoconductive target according to claim 1 wherein said P-type photoconductive layer consists of 80 atomic % selenium, 10 atomic % tellurium and 10 atomic % arsenic.
Claim 5
Dependent Claim
23 words
A photoconductive target according to claim 1, wherein said P-type photoconductive layer includes arsenic in the range from 12 to 30 atomic %.
Claim 6
Dependent Claim
21 words
A photoconductive target according to claim 1, wherein said P-type photoconductive layer includes arsenic in the amount of 10 atomic %.
Claim 7
Dependent Claim
21 words
A photoconductive target according to claim 1, wherein said P-type photoconductive layer includes arsenic in the amount of 3 atomic %.
Claim 8
Dependent Claim
21 words
A photoconductive target according to claim 1, wherein said P-type photoconductive layer includes arsenic in the amount of 4 atomic %.
Claim 9
Dependent Claim
21 words
A photoconductive target according to claim 1, wherein said P-type photoconductive layer includes arsenic in the amount of 5 atomic %.
Claim 10
Dependent Claim
21 words
A photoconductive target according to claim 1, wherein said P-type photoconductive layer includes arsenic in the amount of 6 atomic %.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-11-24 | 1979-05-26 | 1979-11-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-11-24 | 1983-05-26 | 1983-11-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-11-24 | 1987-05-26 | 1987-11-25 | $7700.00 | Window Closed / Lapsed |