Patent US3920860A successfully refreshed from Google Patents.
US3920860A
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US
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Method for producing mixed crystal layers from cds and cdse
Assignee: Siemens AG
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Filing: 1974-01-07
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Granted: 1975-11-18
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Expires: 1994-01-07
Abstract
Abstract A method of producing mixed crystal layers of the composition CdSxSe1-x with 0<x<1 by evaporation of individual elements from three separate crucibles and subsequent precipitation upon a collector, in high vacuum. The collector temperature T4 is between 120* and 400*C. The desired composition of the mixed crystal layer is adjusted solely by changing the ratio of the crucible temperature T2 of the sulfur vaporizer to the crucible temperature T3 of the selenium vaporizer, at a constant crucible temperature T1 of the cadmium vaporizer and constant collector temperature T4.
Inventors
- 👤 Helmut Freller
- 👤 Brigitte Bauer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 07:04
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/125
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
106 words
A METHOD OF PRODUCING LAYER OF CRYSTALS HAVING THE OVERALL COMPOSITION OF CDSXSE1X, WHEREIN 0</>1, THROUGH A VAPORIZATION OF THE INDIVIDUAL ELEMENTS CD, S, AND SE FROM THREE SEPARATE CRUCIBLES AND SUBSEQUENT PRECIPITATION UPON A COLLECTOR IN HIGH VACUUM IN THE ABSENCE OF A CARRIER GAS, WHICH COMPRISES MAINTAINING A COLLECTOR TEMPERATURE BETEEN 120* AND 400*C AND ADJUSTING THE COMPOSITION OF EACH CRYSTAL LAYER BEING PRECIPITATED AS DESIRED, BY CHANGING THE RATIO OF THE CRUCIBLE TEMPERATURE T2 FOR THE S VAPORIZER TO THE CRUCIBLE TEMPERATURE TA FOR THE E VAPORIZER HILE HOLDING THE CRUCIBLE TEMPERATURE T1 FOR THE CD VAPORIZER AND THE COLLECTOR TEMPERATURE T4 CONSTANT.
Claim 2
Independent Claim
106 words
A METHOD OF PRODUCING LAYER OF CRYSTALS HAVING THE OVERALL COMPOSITION OF CDSXSE1X, WHEREIN 0</>1, THROUGH A VAPORIZATION OF THE INDIVIDUAL ELEMENTS CD, S, AND SE FROM THREE SEPARATE CRUCIBLES AND SUBSEQUENT PRECIPITATION UPON A COLLECTOR IN HIGH VACUUM IN THE ABSENCE OF A CARRIER GAS, WHICH COMPRISES MAINTAINING A COLLECTOR TEMPERATURE BETEEN 120* AND 400*C AND ADJUSTING THE COMPOSITION OF EACH CRYSTAL LAYER BEING PRECIPITATED AS DESIRED, BY CHANGING THE RATIO OF THE CRUCIBLE TEMPERATURE T2 FOR THE S VAPORIZER TO THE CRUCIBLE TEMPERATURE TA FOR THE E VAPORIZER HILE HOLDING THE CRUCIBLE TEMPERATURE T1 FOR THE CD VAPORIZER AND THE COLLECTOR TEMPERATURE T4 CONSTANT.
Claim 3
Dependent Claim
19 words
The method of claim 1, wherein the individual elements are precipitated on a collector consisting of glass or ceramic.
Claim 4
Dependent Claim
45 words
The method of claim 2, wherein layers CdSe, CdSxSe1-x and CdS wherein 0<x<1 are sequentially produced by holding T1 at 360*C and T4 at 200*C while increasing T2 within 15 minutes from room temperature to 100*C while simultaneously reducing T3 from 250*C to room temperature.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-11-17 | 1979-05-19 | 1979-11-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-11-17 | 1983-05-19 | 1983-11-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-11-17 | 1987-05-19 | 1987-11-18 | $7700.00 | Window Closed / Lapsed |