Patent US3916822A successfully refreshed from Google Patents.
US3916822A
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Chemical vapor deposition reactor
Assignee: AT&T Inc
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Filing: 1974-04-26
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Granted: 1975-11-04
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Expires: 1994-04-26
Abstract
Abstract A chemical vapor deposition reactor produces deposits which are uniform in composition and thickness by minimizing convective currents in the immediate vicinity of the substrate. Heating of the substrate, positioning the substrate to face in a downward direction at the upper extremity of an essentially convectionfree zone, and a radiation shield are utilized.
Inventors
- 👤 Mcdonald Robinson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 19:56
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45563; C23C16/45565; C23C16/45559; C23C16/46
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
67 words
CHEMICAL VAPOR DEPOSITION APPARATUS FOR DEPOSITING A LAYER OF A SUBSTANCE ON A SURFACE OF A SUBSTRATE COMPRISING MEANS FOR SUPPORTING SAID SUBSTRATE, MEANS FOR INTRODUCING AT LEAST ONE GAS PRODUCING SAID SUBSTANCE INTO A ZONE ADJACENT TO SAID SURFACE, MEANS FOR EXTRACTING ANY RESIDUAL GASEOUS MATERIAL, AND MEANS FOR UNIFORMLY MAINTAINING SAID SUBSTRATE AT A TEMPERATURE HIGHER THAN THAT OF SAID INTRODUCED GAS CHARACTERIZED IN THAT
Claim 2
Dependent Claim
67 words
CHEMICAL VAPOR DEPOSITION APPARATUS FOR DEPOSITING A LAYER OF A SUBSTANCE ON A SURFACE OF A SUBSTRATE COMPRISING MEANS FOR SUPPORTING SAID SUBSTRATE, MEANS FOR INTRODUCING AT LEAST ONE GAS PRODUCING SAID SUBSTANCE INTO A ZONE ADJACENT TO SAID SURFACE, MEANS FOR EXTRACTING ANY RESIDUAL GASEOUS MATERIAL, AND MEANS FOR UNIFORMLY MAINTAINING SAID SUBSTRATE AT A TEMPERATURE HIGHER THAN THAT OF SAID INTRODUCED GAS CHARACTERIZED IN THAT
Claim 3
Dependent Claim
10 words
SAID SURFACE GENERALLY DEFINES THE UPPER EXTREMITY OF SAID ZONE,
Claim 4
Dependent Claim
10 words
SAID SURFACE GENERALLY DEFINES THE UPPER EXTREMITY OF SAID ZONE,
Claim 5
Dependent Claim
7 words
SAID SURFACE FACES IN A DOWNWARD DIRECTION,
Claim 6
Dependent Claim
7 words
SAID SURFACE FACES IN A DOWNWARD DIRECTION,
Claim 7
Dependent Claim
47 words
Chemical vapor deposition apparatus of claim 1 in which said radiation shield consists of at least one perforated plate in a position essentially parallel to said surface of said substrate and of which at least the plate closest to said surface is equipped with a heat-reflecting coating.
Claim 8
Dependent Claim
7 words
said surface faces in a downward direction,
Claim 9
Dependent Claim
7 words
said surface faces in a downward direction,
Claim 10
Dependent Claim
25 words
Chemical vapor deposition apparatus of claim 2 in which said radiation shield consists of a pair of plates separated by a distance of 0.1-10 centimeters.
Claim 11
Dependent Claim
21 words
the lower extremity of said zone is generally defined by a radiation shield permeable to reactant, carrier and product gases, and
Claim 12
Dependent Claim
21 words
the lower extremity of said zone is generally defined by a radiation shield permeable to reactant, carrier and product gases, and
Claim 13
Dependent Claim
21 words
THE LOWER EXTREMITY OF SAID ZONE IS GENERALLY DEFINED BY A RADIATION SHIELD PERMEABLE TO REACTANT, CARRIER AND PRODUCT GASES, AND
Claim 14
Dependent Claim
21 words
THE LOWER EXTREMITY OF SAID ZONE IS GENERALLY DEFINED BY A RADIATION SHIELD PERMEABLE TO REACTANT, CARRIER AND PRODUCT GASES, AND
Claim 15
Dependent Claim
14 words
MEANS ARE PROVIDED FOR INTRODUCING SAID GAS AT A POSITION BELOW SAID RADIATION SHIELD.
Claim 16
Dependent Claim
14 words
MEANS ARE PROVIDED FOR INTRODUCING SAID GAS AT A POSITION BELOW SAID RADIATION SHIELD.
Claim 17
Dependent Claim
14 words
means are provided for introducing said gas at a position below said radiation shield.
Claim 18
Dependent Claim
14 words
means are provided for introducing said gas at a position below said radiation shield.
Claim 19
Dependent Claim
26 words
Chemical vapor deposition apparatus of claim 1 equipped with an auxiliary heated positioned at the periphery of the zone between the substrate and the radiation shield.
Claim 20
Dependent Claim
16 words
Chemical vapor deposition apparatus of claim 1 in which said supporting means is a heated plate.
Claim 21
Dependent Claim
30 words
Chemical vapor deposition apparatus of claim 5 in which said plate is equipped with a heat pipe for transferring heat from the upper to the lower extremity of said plate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-11-03 | 1979-05-05 | 1979-11-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-11-03 | 1983-05-05 | 1983-11-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-11-03 | 1987-05-05 | 1987-11-04 | $7700.00 | Window Closed / Lapsed |