US3916073A
Expired / Lapsed
US
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Process for passivating semiconductor surfaces and products thereof
Assignee: Arris Technology Inc
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Filing: 1974-03-11
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Granted: 1975-10-28
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Expires: 1994-03-11
Abstract
Abstract Polymerizable coatings containing electrically active (electrophilic or nucleophilic) monomers are grafted onto the surface of a semiconductor device, by transesterification and/or hydroperoxide addition, to passivate the surface and improve the electrical characteristics of the semiconductor device. The polymerizable coating for n-type semiconductors contains at least one electrophilic monomer such as an electrophilic polyallyl ester (e.g. diallyl phthalate), and the polymerizable coating for p-type semiconductors contains at least one nucleophilic monomer such as a nucleophilic nitrogen-containing vinyl ester (e.g. polyallyl cyanidine) and preferably a mixture of such nucleophilic and electrophilic monomers. Various optional ingredients of the polymerizable coatings include polyfunctional vinyl phosphorus monomers to impart flame-resistance (for the ntype coatings only), a vinyl aromatic monomer to permit low temperature curing of the coating and enhanced rigidity thereof, carbon black to impart opacity and light stability, solvents, fillers, free radical polymerization initiators, and polymerization inhibitors.
Inventors
- 👤 Carl Horowitz
- 👤 Michael Dichter
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 11:43
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/47; H10W74/10; H10W74/131; Y; Y10; Y10T; Y10T428/00; Y10T428/31504; Y10T428/31652; Y10T428/31667; Y10T428/31855; Y10T428/31942
Claims Analysis
Total Claims: 59
Claim 1
Independent Claim
78 words
A PROCESS FOR PASSIVATING THE SURFACE OF A SEMICONDUCTOR DEVICE AND IMPROCING THE ELE TRICAL CHARACTERISTICS THEREOF COMPRISING THE STEPS OF A. APPLYING A POLYMERIZABLE COATING CONTAINING AT LEAST ONE ELECTRICALLY ACTIVE MONOMER TO THE SURFACE OF THE SEMICONDUCTOR DEVICE TO BE PASSIVATED, AND B. POLYMERIZING AND CURING SAID POLYMERIZABLE COATING TO EFFECT GRAFTING OF SAID ELECTRICALLY ACTIVE MONOMER ONTO SAID SURFACE, WHEREBY SAID CURED COATING PASSIATES SAID SURFACE AND IMPROVES THE ELECTRICAL CHARACTERISTICS OF SAID SEMICONDUCTOR DEVICE.
Claim 2
Dependent Claim
78 words
A PROCESS FOR PASSIVATING THE SURFACE OF A SEMICONDUCTOR DEVICE AND IMPROCING THE ELE TRICAL CHARACTERISTICS THEREOF COMPRISING THE STEPS OF A. APPLYING A POLYMERIZABLE COATING CONTAINING AT LEAST ONE ELECTRICALLY ACTIVE MONOMER TO THE SURFACE OF THE SEMICONDUCTOR DEVICE TO BE PASSIVATED, AND B. POLYMERIZING AND CURING SAID POLYMERIZABLE COATING TO EFFECT GRAFTING OF SAID ELECTRICALLY ACTIVE MONOMER ONTO SAID SURFACE, WHEREBY SAID CURED COATING PASSIATES SAID SURFACE AND IMPROVES THE ELECTRICAL CHARACTERISTICS OF SAID SEMICONDUCTOR DEVICE.
Claim 3
Dependent Claim
28 words
The process of claim 1 wherein said electrically active monomer is an electrophilic diallyl ester selected from the group consisting of aliphatic, aromatic, homocyclic compounds and mixtures thereof.
Claim 4
Dependent Claim
29 words
The process of claim 2 wherein said electrophilic diallyl ester is selected from the group consisting of diallyl phthalate, tetrahydro diallyl phthalate, diallyl sebacate, diallyl adipate, and mixtures thereof.
Claim 5
Dependent Claim
29 words
The process of claim 3 wherein electrophilic diallyl ester is a diallyl phthalate selected from the group consisting of di-ortho-diallyl phthalate and a mixture of di-ortho- and di-meta-diallyl phthalate.
Claim 6
Dependent Claim
24 words
The process of claim 2 wherein said electrophilic diallyl ester comprises at least 60 percent by weight of said polymerizable coating absent any filler.
Claim 7
Dependent Claim
44 words
The process of claim 2 wherein said semiconductor is an n-type semiconductor, and wherein said polymerizable coating further includes about 15-25 percent of polyfunctional vinyl phosphorus monomer, based on the weight of said polymerizable coating absent any filler, whereby said cured coating is flame-resistant.
Claim 8
Dependent Claim
32 words
The process of claim 6 wherein said phosphorus monomer is selected from the group consisting of bis ( Beta - chloroethyl) vinyl phosphonate, bis (ethyl) vinyl phosphonate, triallyl phosphate and mixtures thereof.
Claim 9
Dependent Claim
37 words
The process of claim 1 wherein said polymerizable coating further includes about 0.5-1.5 percent of carbon black, based on the weight of said polymerizable coating absent any filler, whereby said cured coating is substantially opaque and light-stable.
Claim 10
Dependent Claim
46 words
The process of claim 1 wherein said polymerizable coating further includes about 10-40 percent of vinyl aromatic monomer, based on the weight of said polymerizable coating absent any filler, whereby curing of said polymerizable coating is facilitated and the rigidity of said cured coating is increased.
Claim 11
Dependent Claim
38 words
The process of claim 9 wherein said vinyl aromatic monomer is selected from the group consisting of styrene, vinyl toluene, vinyl benzyl chloride, divinyl benzene, and mixtures thereof, and wherein said polymerizable compound is cured at about 80*-120*C.
Claim 12
Dependent Claim
36 words
The process of claim 1 wherein said polymerizable coating further includes about 30-50 percent of filler, based on the weight of said polymerizable coating absent any filler, whereby the viscosity of said polymerizable coating is increased.
Claim 13
Dependent Claim
11 words
The process of claim 11 wherein said filler is aluminum silicate.
Claim 14
Dependent Claim
43 words
The process of claim 1 wherein free radicals are introduced into said polymerizable coating after said application and said polymerizable coating is maintained at a temperaTure of about 80* to 200*C for a period of time sufficient to effect said grafting and cure.
Claim 15
Dependent Claim
25 words
The process of claim 1 wherein said polymerizable coating comprises a mixture of the monomer and prepolymer of said at least one electrically active monomer.
Claim 16
Dependent Claim
19 words
The process of claim 14 wherein the ratio of said monomer to said prepolymer is about 30:70 to 70:30.
Claim 17
Dependent Claim
16 words
The process of claim 1 wherein said electrically active monomer is a nucleophilic nitrogen-containing vinyl ester.
Claim 18
Dependent Claim
21 words
The process of claim 1 wherein said polymerizable coating contains at least one electrophilic monomer and at least one nucleophilic monomer.
Claim 19
Dependent Claim
20 words
The process of claim 17 wherein both said electrophilic monomer and said nucleophilic monomer contain a plurality of allyl groups.
Claim 20
Dependent Claim
49 words
The process of claim 17 wherein said semiconductor device is a p-type semiconductor and said polymerizable coating comprises at least 60 percent of electrically active monomers including 15-20 percent of at least one nucleophilic nitrogen-containing vinyl ester monomer, based on the weight of said polymerizable coating absent any filler.
Claim 21
Dependent Claim
14 words
The process of claim 19 wherein said nucleophilic vinyl ester monomer contains a ring-nitrogen.
Claim 22
Dependent Claim
15 words
The process of claim 20 wherein said nucleophilic vinyl ester monomer is a polyallyl cyanidine.
Claim 23
Dependent Claim
29 words
The process of claim 20 wherein said nucleophilic vinyl ester monomer is selected from the group consisting of triallyl cyanurate, allyl imidazole, vinyl carbazole, diallyl melamine and mixtures thereof.
Claim 24
Dependent Claim
45 words
The process of claim 1 wherein said surface has exposed hydroxyl groups thereon available for reaction with said electrically active monomer, and at least some of said electrically active monomer undergoes transesterification with at least some of said hydroxyl groups during said polymerization and curing.
Claim 25
Dependent Claim
32 words
The process of claim 1 wherein said surface is comprises at least in part of material selected from the group consisting of silicon, the oxides thereof, the hydroxides thereof, and combinations thereof.
Claim 26
Dependent Claim
51 words
The process of claim 1 wherein said semiconductor is an n-type semiconductor, and wherein said polymerizable coating comprises I. at least 50 percent electrophilic diallyl ester, II. 20-25 percent polyfunctional vinyl phosphorus compound, and, III. 15-25 percent vinyl aromatic monomer, based on the weight of said polymerizable coating absent any filler.
Claim 27
Dependent Claim
15 words
The process of claim 25 wherein said polymerizable coating additionally contains 30-50 percent inorganic filler.
Claim 28
Dependent Claim
51 words
The process of claim 1 wherein said semiconductor is a p-type semiconductor, and wherein said polymerizable coating comprises I. at least 60 percent electrically active monomers including 15-20 percent nucleophilic nitrogen-containing vinyl ester, and II. 15-25 percent vinyl aromatic monomer, based on the weight of said polymerizable coating absent any filler.
Claim 29
Dependent Claim
15 words
The process of claim 27 wherein said polymerizable coating additionally contains 30-50 percent inorganic filler.
Claim 30
Dependent Claim
42 words
IN A SEMICONDUCTOR DEVICE HAVING A SURFACE AND A PASSIVATING COATING ON SAID SURFACE, THE IMPROEMENT WHEREIN SAID COATING CONTAINS AT LEAST ONE POLYMERIZED AND CURED ELECTRICALLY ACTIVE MONOMER GRAFTED ONTO SAID SURFACE TO IMPROVE THE ELECTRICAL CHARACTERISTICS OF SAID SEMICONDUCTOR DEVICE.
Claim 31
Dependent Claim
42 words
IN A SEMICONDUCTOR DEVICE HAVING A SURFACE AND A PASSIVATING COATING ON SAID SURFACE, THE IMPROEMENT WHEREIN SAID COATING CONTAINS AT LEAST ONE POLYMERIZED AND CURED ELECTRICALLY ACTIVE MONOMER GRAFTED ONTO SAID SURFACE TO IMPROVE THE ELECTRICAL CHARACTERISTICS OF SAID SEMICONDUCTOR DEVICE.
Claim 32
Dependent Claim
29 words
The semiconductor device of claim 29 wherein said electrically active monomer is an electrophilic diallyl ester selected from the group consisting of aliphatic, aromatic, homocyclic compounds and mixtures thereof.
Claim 33
Dependent Claim
30 words
The semiconductor device of claim 30 wherein said electrophilic diallyl ester is selected from the group consistinng of diallyl phthalate, tetrahydro diallyl phthalate, diallyl sebacate, diallyl adepate, and mixtures thereof.
Claim 34
Dependent Claim
31 words
The semiconductor device of claim 31 wherein said electrophilic diallyl ester is a dially phthalate selected from the group consisting of di-ortho-diallyl phthalate and a mixture of di-ortho- and di-meta-diallyl phthalate.
Claim 35
Dependent Claim
23 words
The semiconductor device of claim 32 wherein said electrophilic diallyl ester is at least 60% by weight of said coating absent any filler.
Claim 36
Dependent Claim
43 words
The semiconductor device of claim 30 wherein said semiconductor is an n-type semiconductor, and wherein said coating further includes about 15-25 percent of copolymerized polyfunctional vinyl phosphorus monomer, based on the weight of said coating absent any filler, whereby said coating is flame-resistant.
Claim 37
Dependent Claim
32 words
The semiconductor device of claim 34 wherein said phosphorus monomer is selected from the group consisting of bis ( Beta -chloroethyl) vinyl phosphonate, bis (ethyl) vinyl phosphonate, triallyl phosphate and mixtures thereof.
Claim 38
Dependent Claim
35 words
The semiconductor device of claim 29 wherein said coating further includes about 0.5-1.5 percent of carbon black, based on the weight of said coating absent any filler, whereby said coating is substantially opaque and light-stable.
Claim 39
Dependent Claim
37 words
The semiconductor device of claim 29 wherein said coating further includes about 10-40 percent of copolymerized vinyl aromatic monomer, based on the weight of said coating absent any filler, whereby the rigidity of said coating is increased.
Claim 40
Dependent Claim
29 words
The semiconductor device of claim 37 wherein said vinyl aromatic monomer is selected from the group consisting of styrene, vinyl toluene, vinyl benzyl chloride, divinyl benzene, and mixtures thereof.
Claim 41
Dependent Claim
26 words
The semiconductor device of claim 29 wherein said coating further includes about 30-50 percent of filler, based on the weight of said coating absent any filler.
Claim 42
Dependent Claim
13 words
The semiconductor device of claim 39 wherein said inorganic filler is aluminum silicate.
Claim 43
Dependent Claim
17 words
The semiconductor device of claim 29 wherein said electrically active monomer is a nucleophilic nitrogen-containing vinyl ester.
Claim 44
Dependent Claim
27 words
The semiconductor device of claim 29 wherein said coating contains at least one copolymerized and cured electrophilic monomer and at least one copolymerized and cured nucleophilic monomer.
Claim 45
Dependent Claim
21 words
The semiconductor device of claim 42 wherein both said electrophilic monomer and said nucleophilic monomer contain a plurality of allyl groups.
Claim 46
Dependent Claim
50 words
The semiconductor device of claim 29 wherein said semiconductor device is a p-type semiconductor and said coating comprises at least 60% of copolymerized and cured electrically active monomers including at least 15-20 percent of copolymerized nucleophilic nitrogen-containing vinyl ester monomer, based on the weight of said coating absent any filler.
Claim 47
Dependent Claim
15 words
The semiconductor device of claim 44 wherein said nucleophilic vinyl ester monomer contains a ring-nitrogen.
Claim 48
Dependent Claim
16 words
The semiconductor device of claim 45 wherein said nucleophilic vinyl ester monomer is a polyallyl cyanidine.
Claim 49
Dependent Claim
29 words
The semiconductor device of claim 45 wherein said nucleophilic vinyl ester monomer is selected from the group of triallyl cyanurate, allyl imidazole, vinyl carbazole, diallyl melamine and mixtures thereof.
Claim 50
Dependent Claim
26 words
The semiconductor device of claim 47 wherein said coating further includes about 30-50 percent of filler, based on the weight of said coating absent any filler.
Claim 51
Dependent Claim
33 words
The semiconductor device of claim 29 wherein said surface is comprised at least in part of material selected from the group consisting of silicon, the oxides thereof, the hydroxides thereof, and combinations thereof.
Claim 52
Dependent Claim
53 words
The semiconductor device of claim 29 wherein said semiconductor is an n-type semiconductor, and wherein said coating comprises the reaction product of I. at least 50% electrophilic diallyl ester, II. 20-25 percent polyfunctional vinyl phosphorus compound, and III. 15-25 percent vinyl aromatic monomer, based on the weight of said coating absent any filler.
Claim 53
Dependent Claim
15 words
The semiconductor device of claim 50 wherein said coating additionally contains 30-50 percent inorganic filler.
Claim 54
Dependent Claim
54 words
The semiconductor device of claim 29 wherein said semiconductor is a p-type semiconductor, and wherein said coating comprises the reaction product of I. at least 60 percent electrically active monomers, including 15-20 percent nucleophilic nitrogen-containing vinyl ester, and II. 15-25 percent vinyl aromatic monomer, based on the weight of said coating absent any filler.
Claim 55
Dependent Claim
15 words
The semiconductor device of claim 52 wherein said coating additionally contains 30-50 percent inorganic filler.
Claim 56
Dependent Claim
25 words
The process of claim 1 wherein said electrically active monomer is selected from the group consisting of electrophilic polyallyl esters and nucleophilic nitrogen-containing vinyl esters.
Claim 57
Dependent Claim
61 words
The process of claim 54 wherein said polymerizable coating for application to an n-type semiconductor includes at least 50% by weight of said electrophilic polyallyl esters and said polymerizable coating for application to a p-type semiconductor includes 10-25 percent by weight of said nucleophilic nitrogen-containing vinyl esters, said percentages ebing based on the weight of said polymerizable coating, absent any filler.
Claim 58
Dependent Claim
26 words
The semiconductor device of claim 29 wherein siad electrically active monomer is selected from the group consisting of electrophilic polyallyl esters and nucleophilic nitrogen-containing vinyl esters.
Claim 59
Dependent Claim
55 words
The semiconductor device of claim 56 wherein said coating on an n-type semiconductor includes at least 50% by weight of said electrophilic polyallyl esters, and said coating on a p-type semiconductor includes 10-25 percent by weight of said nucleophilic nitrogen-containing vinyl esters, said percentages being based on the weight of said coating, absent any filler.
References Cited (Backward Citations)
US2949640A
Cited
US3179614A
Cited
US3804669A
Cited
US3615913A
Cited
US3684592A
Cited
US3822327A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-10-27 | 1979-04-28 | 1979-10-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-10-27 | 1983-04-28 | 1983-10-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-10-27 | 1987-04-28 | 1987-10-28 | $7700.00 | Window Closed / Lapsed |