Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
145 words
A SEMICONDUCTOR POWER COMPONENT THE CURRENT THROUGH WHICH MAY BE CONTROLLED IN A NON-DISCRETE, CONTINUOUS, AND REVERSIBLE FASHION, WHICH COMPRISES: FIRST, SECOND, THIRD, FOURTH AND FIFTH SEQUENTIALLY POSITIONED SEMICONDUCTOR ZONES EACH HAVING A DIFFERENT IMPURITY DOPING, SAID FIRST THROUGH FOURTH ZONES FORMING A ZONE SEQUENVE OF ALTERNATING CONDUCTIVETIES, FIRST MAIN TERMINAL MEANS COUPLED TO SAID FIRST ZONE, SECOND MAIN TERMINAL MEANS COUPLED TO SAID FIFTH ZONE WHICH IS ADAPTED TO BE COUPLED TO A FIRST SOURCE OF POTENTIAL, FIXED POTENTIAL TERMINAL MEANS COUPLED TO SAID FOURTH ZONE FOR CONNECTING SAID FOURTH ZONE TO A SECOND SOURCE OF POTENTIAL HAVING AN ABSOLUTE MAGNITUDE LESS THAN OR EQUAL TO THE ABSOLUTE MAGNITUDE OF SAID FIRST SOURCE OF POTENTIAL, AND CONTROL MEANS COUPLED TO SAID SECOND ZONE FOR CONTINUOUSLY VARYING THE MAGNITUDE OF THE CURRENT FLOWING FROM SAID FIRST MAIN TERMINAL MEANS TO SAID SECOND MAIN TERMINAL MEANS
Claim 2
Dependent Claim
145 words
A SEMICONDUCTOR POWER COMPONENT THE CURRENT THROUGH WHICH MAY BE CONTROLLED IN A NON-DISCRETE, CONTINUOUS, AND REVERSIBLE FASHION, WHICH COMPRISES: FIRST, SECOND, THIRD, FOURTH AND FIFTH SEQUENTIALLY POSITIONED SEMICONDUCTOR ZONES EACH HAVING A DIFFERENT IMPURITY DOPING, SAID FIRST THROUGH FOURTH ZONES FORMING A ZONE SEQUENVE OF ALTERNATING CONDUCTIVETIES, FIRST MAIN TERMINAL MEANS COUPLED TO SAID FIRST ZONE, SECOND MAIN TERMINAL MEANS COUPLED TO SAID FIFTH ZONE WHICH IS ADAPTED TO BE COUPLED TO A FIRST SOURCE OF POTENTIAL, FIXED POTENTIAL TERMINAL MEANS COUPLED TO SAID FOURTH ZONE FOR CONNECTING SAID FOURTH ZONE TO A SECOND SOURCE OF POTENTIAL HAVING AN ABSOLUTE MAGNITUDE LESS THAN OR EQUAL TO THE ABSOLUTE MAGNITUDE OF SAID FIRST SOURCE OF POTENTIAL, AND CONTROL MEANS COUPLED TO SAID SECOND ZONE FOR CONTINUOUSLY VARYING THE MAGNITUDE OF THE CURRENT FLOWING FROM SAID FIRST MAIN TERMINAL MEANS TO SAID SECOND MAIN TERMINAL MEANS
Claim 3
Dependent Claim
25 words
A continuously variable semiconductor power component as in claim 1, further comprising: a sixth zone having intrinsic conductivity positioned between said fourth and fifth zones.
Claim 4
Dependent Claim
38 words
A continuously variable semiconductor power component as in claim 1, wherein: said second source of potential provides a voltage less than twelve volts greater than the voltage applied to said main terminal means coupled to said first zone.
Claim 5
Dependent Claim
49 words
A continuously variable semiconductor power component as in claim 3, wherein: said first source of potential applies a voltage to said main terminal means coupled to said fifth zone which exceeds by more than 1 kv said voltage applied to said main terminal means coupled to said first zone.
Claim 6
Dependent Claim
20 words
A continuously variable semiconductor power compOnent as in claim 4, wherein: said component controls more than 200 watts of power.
Claim 7
Dependent Claim
40 words
A continuously variable semiconductor power component as in claim 1, further comprising: diode means coupled to said main terminal means for blocking a charge carrier current from said main terminal means coupled to said fifth zone to said control terminal.
Claim 8
Dependent Claim
22 words
A continuously variable semiconductor power component as in claim 6, further comprising: an FET diode coupled to said fixed potential terminal means.
Claim 9
Dependent Claim
23 words
A continuously variable semiconductor power component as in claim 1, further comprising: a cooling device coupled to the surface of said fifth zone.
Claim 10
Dependent Claim
23 words
A continuously variable semiconductor power component as in claim 1, further comprising: a cooling device provided for said first, second and third zones.
Claim 11
Dependent Claim
48 words
A continuously variable semiconductor power component as in claim 2, wherein: said component is shaped so that an acute angle is formed between a first plane defined by an exterior surface of said component and a second plane formed by the transition between said fourth and sixth zones.
Claim 12
Dependent Claim
61 words
A continuously variable semiconductor power component as in claim 1, wherein: said portion of said third zone has a doping factor 10 times greater than that of said fourth zone, and wherein said portion of said third zone is less than one-hundredth the thickness of said fourth zone and less than one-tenth the thickness of the remainder of said third zone.
Claim 13
Dependent Claim
24 words
A continuously variable semiconductor power component as in claim 11, wherein: said third zone is doped with a minority carrier life time reducing substance.