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US3911474A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor structure and method

Assignee: Signetics Corp
•
Filing: 1973-07-30
•
Granted: 1975-10-07
•
Expires: 1993-07-30
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Abstract

Abstract Semiconductor structure formed of a semiconductor body having a planar surface and having regions of first and second conductivity types extending to the surface and with a layer of insulating material formed on the surface. The layer of insulating material has openings formed therein exposing portions of said regions. A lead structure is adherent to the layer of insulating material and extends through the openings to make contact to the portions of the regions so that the regions form parts of an integrated circuit. The lead structure includes a layer of gold having a relatively rough surface with a roughness scale ranging from 10 to 20 microinches so that photoresist will readily adhere thereto. In the method for forming a semiconductor structure, the layer of gold having a relatively rough surface is utilized so that photoresist will readily adhere thereto to permit the formation of a lead structure in accordance with a predetermined pattern.

Inventors

  • 👤 Warren C Rosvold

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 01:38
CPC Classifications
H; H10; H10P; H10P95/00; H10W; H10W20/00; H10W20/40; Y; Y10; Y10S; Y10S148/00; Y10S148/02; Y10S148/051; Y10S148/115

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 123 words
IN A SEMICONDUCTOR STRUCTURE, A SEMICONDUCTOR BODY HAVING A PLANAR SURFACE AND HAVING REGIONS OF FIRST AND SECOND CONDUCTIVITY TYPES EXTENDING TO SAID SURFACE, A LAYER OF INSULATING MATERIAL FORMED ON SAID SURFACE, SAID LAYER HAVING OPENINGS THEREIN EXPOSING PORTIONS OF SAID REGIONS, A LEAD STRUCTURE ADHERENT TO SAID LAYER OF INSULATING MATERIAL AND EXTENDING THROUGH SAID OPENINGS TO MAKE CONTACT TO SAID PORTIONS OF SAID REGIONS SO THAT SAID REGIONS FORM PARTS OF AN INTEGRATED CIRCUIT, SAID LEAD STRUCTURE UNCLUDING A FIRST LAYER OF GOLD HAVING A RELATIVELY ROUGH SURFACE WITH A ROUGHNESS SCALE RANGING FROM 10 TO 20 MICROINCHES SO THAT PHOTORESIST WILL READILY ADHERE THERETO. AND A LAYER OF PHOTORESIST ADHERENT TO SAID RELATIVELY ROUGH SURFACE OF SAID GOLD LAYER.
Claim 2
Dependent Claim 123 words
IN A SEMICONDUCTOR STRUCTURE, A SEMICONDUCTOR BODY HAVING A PLANAR SURFACE AND HAVING REGIONS OF FIRST AND SECOND CONDUCTIVITY TYPES EXTENDING TO SAID SURFACE, A LAYER OF INSULATING MATERIAL FORMED ON SAID SURFACE, SAID LAYER HAVING OPENINGS THEREIN EXPOSING PORTIONS OF SAID REGIONS, A LEAD STRUCTURE ADHERENT TO SAID LAYER OF INSULATING MATERIAL AND EXTENDING THROUGH SAID OPENINGS TO MAKE CONTACT TO SAID PORTIONS OF SAID REGIONS SO THAT SAID REGIONS FORM PARTS OF AN INTEGRATED CIRCUIT, SAID LEAD STRUCTURE UNCLUDING A FIRST LAYER OF GOLD HAVING A RELATIVELY ROUGH SURFACE WITH A ROUGHNESS SCALE RANGING FROM 10 TO 20 MICROINCHES SO THAT PHOTORESIST WILL READILY ADHERE THERETO. AND A LAYER OF PHOTORESIST ADHERENT TO SAID RELATIVELY ROUGH SURFACE OF SAID GOLD LAYER.
Claim 3
Dependent Claim 22 words
A semiconductor structure as in claim 1 wherein said first layer of gold has a thickness ranging from 3,800 to 6,000 Angstroms.
Claim 4
Dependent Claim 22 words
A semiconductor structure as in claim 1 wherein said first layer of gold has a thickness ranging from 3,800 to 4,200 Angstroms.
Claim 5
Dependent Claim 28 words
A semiconductor structure as in claim 1 wherein said lead structure includes a plurality of metal layers underlying said first layer of gold having a relatively rough surface.
Claim 6
Dependent Claim 38 words
A semiconductor structure as in claim 4 wherein said plurality of metal layers underlying said first layer of gold having a relatively rough surface includes a layer of titanium, a layer of platinum and a layer of gold.
Claim 7
Dependent Claim 42 words
A semiconductor structure as in claim 5 wherein said layer of titanium has a thickness of approximately 1000 Angstroms, said layer of platinum has a thickness of approximately 3000 Angstroms and said layer of gold has a thickness of approximately 1000 Angstroms.
Claim 8
Dependent Claim 25 words
A semiconductor structure as in claim 1 wherein said first layer of gold having a relatively rough surface is in the form of electroformed gold.

References Cited (Backward Citations)

US3528090A Cited
US3616348A Cited
US3560358A Cited
US3751292A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1978-10-06 1979-04-07 1979-10-07 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1982-10-06 1983-04-07 1983-10-07 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1986-10-06 1987-04-07 1987-10-07 $7700.00 Window Closed / Lapsed

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