Patent US3909837A successfully refreshed from Google Patents.
US3909837A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High-speed transistor with rectifying contact connected between base and collector
Assignee: Texas Instruments Inc
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Filing: 1971-06-07
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Granted: 1975-09-30
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Expires: 1991-06-07
Abstract
Abstract High-speed logic switching is accomplished by an internal antisaturation clamp comprising a barrier-type rectifying junction between the base electrode and a collector electrode of a junction transistor. Diffusion and metalization techniques are used to fabricate a shallow-base transistor, having a high internal cutoff frequency, and a barrier-type rectifying junction surrounded by a guard ring. The rectifying junction covers a window in a diffusion region for the base electrode over a portion of the collector electrode. A metal film overlays the window to the collector electrode area and extends over a portion of the base electrode, thereby forming a metal-semiconductor barrier-type rectifying junction internally between the base electrode and the collector electrode.
Inventors
- 👤 John William Kronlage
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:46
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/02; H03K19/08; H03K19/082; H03K19/084; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/137; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10D84/617; H10D99/00; H10P; H10P95/00; H10W; H10W20/00; H10W20/40; H10W72/00
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
196 words
A semiconductor device comprising: a body of semiconductor material of one conductivity type and of relatively high resistivity, said body comprising the collector region of a transistor, a first region of opposite conductivity type to said body provided in one surface of said body, said first region comprising the base region of the transistor, a second region of said one conductivity type provided within a portion of said first region, said second region comprising the emitter region of the transistor, said first region and said second region emerging at said one surface of said body at adjacent positions, said body including a zone emerging at said one surface of said body, the lateral periphery of said zone being completely bounded by said first region and being disposed in contiguous relationship therewith, a metal contact disposed on said zone and partially on said first region but spaced from said second region, said metal contact establishing an ohmic contact with said first region and a rectifying barrier contact with said zone to define a metalsemiconductor junction integral with the collector region of the transistor providing an internal antisaturation clamp therefor to increase the switching speed of the transistor.
Claim 2
Dependent Claim
196 words
A semiconductor device comprising: a body of semiconductor material of one conductivity type and of relatively high resistivity, said body comprising the collector region of a transistor, a first region of opposite conductivity type to said body provided in one surface of said body, said first region comprising the base region of the transistor, a second region of said one conductivity type provided within a portion of said first region, said second region comprising the emitter region of the transistor, said first region and said second region emerging at said one surface of said body at adjacent positions, said body including a zone emerging at said one surface of said body, the lateral periphery of said zone being completely bounded by said first region and being disposed in contiguous relationship therewith, a metal contact disposed on said zone and partially on said first region but spaced from said second region, said metal contact establishing an ohmic contact with said first region and a rectifying barrier contact with said zone to define a metalsemiconductor junction integral with the collector region of the transistor providing an internal antisaturation clamp therefor to increase the switching speed of the transistor.
Claim 3
Dependent Claim
59 words
A semiconductor device as set forth in claim 1, wherein a pair of said second regions of said one conductivity type are provided within said first region in spaced apart relationship to define respective emitter regions of the transistor, and said zone of said body being located between said pair of second regions in spaced relationship with respect thereto.
Claim 4
Dependent Claim
37 words
A semiconductor device as set forth in claim 2, wherein said pair of second regions and said zone of said body are elongated and are arranged in parallel relationship extending transversely with respect to said first region.
Claim 5
Dependent Claim
90 words
A semiconductor device as set forth in claim 3, further including a substrate of semiconductor material, said body comprising an epitaxial layer formed on said substrate, said substrate including a substrate region of said one conductivity type and of relatively low resistivity, and said body including a pair of diffusion channels therethrough emerging at said one surface of said body at opposite ends of said first region, said diffusion channels being of said one conductivity type and of relatively low resistivity and in respective contacting relation to said substrate region.
Claim 6
Dependent Claim
39 words
A semiconductor device as set forth in claim 4, further including metal contacts establishing respective ohmic contacts with said pair of second regions and said pair of diffusion channels of said one conductivity type of relatively low resistivity. pg,18
Claim 7
Dependent Claim
43 words
A semiconductor device as set forth in claim 1, wherein said one conductivity type semiconductor material is N type material and said opposite conductivity type semiconductor material is P type material such that said collector, base, and emitter regions define an NPN transistor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-09-29 | 1979-03-31 | 1979-09-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-09-29 | 1983-03-31 | 1983-09-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-09-29 | 1987-03-31 | 1987-09-30 | $7700.00 | Window Closed / Lapsed |