Ion implantation process

Claim 2

IN A PROCESS FOR ION IMPLANTATION WITH AN ION IMPLANTATION UNIT IN WHICH SAID UNIT COMPRISES AN ION SOURCE, AN XTRACTION ELEMENT, A MASS SEPARATOR, A COCUSSING DEVICE AND AN OBJECT HOLDER, THE IMPROVEMENT WHICH COMPRISES THE STEPS OF CHARGING TO SAID ION SOURCE A COMPOSITION COMPRISING CHEMICAL COMPOUNDS WHICH CONTAILS ALL THE ELEMENTS TO BE IONIZED WHICH ARE REQUIRED FOR HE DESIRED IMPLANTAION, SAID COMPOSITION BEING ADAPTED TO PRODUCE ALL REQUIRED ION TYPES IN SAID ION SOURCE EITHER SIMULTANEOUSLY OR SEQUENTIALLY, AND DIRECTING SAID IONS SO PRODUCED FROM SUCH ION SOURCE AS A BEAM ALONG ONE BEAM PATH TOWARDS A TARGET OBJECT, THE IONS IN SAID BEAM BEING CONTROLLED BY SAID MASS SEPARATOR SO THAT A PARTICULAR TYPE OR TYPES OF IONS DESIRED ARE DEFLECTED ONTO SAID TARGET OBJECT AT A GIVEN PRECHOSE, DESIRED INSTANT OF TIME AT A PREDETERMINED ENERGY AND IN A PREDETERMINED PROFLE.

Claim 3

The process of claim 1 wherein said composition consists of a mixture of at least two compounds.

Claim 4

The process of claim 1, wherein said composition consists of an alloy.

Claim 5

The process of claim 1 to 3, wherein the selection of a single ion type with which said target object is to be irradiated from among the total number of ion types produced by said ion source is accomplished through a change in electromagnetic fields exerted by mass separator on ions passing therethrough.

Claim 6

The process of claim 4 wherein said change in said mass separator takes place by means of automatic process control.

Claim 7

The process of claim 1 to 5, wherein said implantation occurs in a predetermined dose or profile by means of automatic process control.

Claim 8

The process of claim 4 to 6, wherein multiple doping of a target object with various ions is accomplished in predetermined, respective profiles.

Claim 9

A process for ion implantation of a target object using an ion implantation unit which comprises an ion source, an extraction element, a mass separator, a focussing device, and an object holder, said process comprising the steps of A. charging said ion source with a composition comprising at least one vaporizable compound containing all elements types to be ionized and implanted, B. vaporizing said composition in said ion source generating an ion beam therefrom which contains all ion types to be implanted, and passing said ion beam into said mass separator, C. regulating the electrical energy applied to said mass separator at a value which is adapted to permit passage therethrough of substantially only ions of one type within such beam, D. impacting such one type of so-passed ions as a beam against a predetermined said target object at a predetermined energy and in a predetermined profile, E. thereafter changing the electrical energy applied to said mass separator to a value which is adapted to permit passage therethrough of substantially only ions of another type within such group, F. impacting such other type of so-passed ions as a beam against said predetermined target object at a predetermined energy and in a predetermined profile, and G. repeating steps (E) and (F) until all ion types to be implanted in said beam are successively so respectively impacted against said target object.

Claim 10

A process for ion implantation of a target object using an ion implantation unit which comprises an ion source, an extraction element, a mass separator, a focussing device, and an object holder, said process comprising the steps of A. charging said ion source with a composition comprising at least one vaporizable compound containing all elements types to be ionized and implanted, B. vaporizing said composition in said ion source generating an ion beam therefrom which contains all ion types to be implanted, and passing said ion beam into said mass separator, C. regulating the electrical energy applied to said mass separator at a value which is adapted to permit passage therethrough of substantially only ions of one type within such beam, D. impacting such one type of so-passed ions as a beam against a predetermined said target object at a predetermined energy and in a predetermined profile, E. thereafter changing the electrical energy applied to said mass separator to a value which is adapted to permit passage therethrough of substantially only ions of another type within such group, F. impacting such other type of so-passed ions as a beam against said predetermined target object at a predetermined energy and in a predetermined profile, and G. repeating steps (E) and (F) until all ion types to be implanted in said beam are successively so respectively impacted against said target object.

Claim 11

The process of claim 8 wherein said composition comprises B P.

Claim 12

The process of claim 8 wherein said composition comprises a mixture of BCl3 and PCl3.

Claim 13

The process of claim 10, wherein said composition contains one part BCl3 and ten parts PCl3.

Claim 14

The process of claim 8, wherein all ions are accelerated to an energy of 15 ke V.

Claim 15

The process of claim 8 wherein said composition comprises the compound GaAs.